NKET161 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products Phase Control Thyristor, 160A (New INT-A-PAK Power Modules) New INT-A -PAK 46 2.8x0.8+0.1 12+1 - 34+2 - 24 6.5 15+1 FEATURES 80+1 • High voltage 94+1 2 screws M6 • Electrically isolated by DBC ceramic (AI 2O3) • High surge capability 29+1 - 36+2 - • Industrial standard package 9 7+0.5 0.8 • 3500 V RMS isolating voltage • Glass passivated chips • Modules uses high voltage power thyristor/diodes in two basic configurations All dimensions in millimeters • Simple mounting • UL approved file E320098 • Compliant to RoHS • Designed and qualified for multiple level APPLICATIONS • DC motor control and drives • Battery charges • Welders 3 KG 1 • Power converters • Lighting control • Heat and temperature control PRODUCT SUMMARY IT(AV) 160 A MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS 160 A IT(AV) 85 ° C IT(RMS) 85 ° C 251 50 Hz 5400 60 Hz 5670 50 Hz 146 60 Hz 133 ITSM I2t I2√t 1458 A kA2s kA2√s VDRM / VRRM Range 400 to 1600 V TJ Range -40 to 125 ° C Page 1 of 3 NKET161 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VRRM /V DRM , MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM /V DSM , MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 04 400 500 08 800 900 12 1200 1300 14 1400 1500 16 1600 1700 NKET160 IRRM /I DRM AT 125 ° C mA 20 FORWARD CONDUCTION PARAMETER Maximum average on-state current at case temperature Maximum RMS on-state current Maximum peak, one-cycle, on-state non-repetitive surge current SYMBOL IT(AV) I T(RMS) ITSM TEST CONDITIONS 180° conduction, half sine wave ,50Hz 180° conduction, half sine wave ,50Hz ,TJ = 85°C I 2t UNITS 160 A 85 °C 251 t = 10 ms 5400 t = 8.3 ms 5670 No voltage reapplied t = 10 ms Maximum I 2t for fusing VALUES t = 8.3 ms Sine half wave, initial TJ = TJ maximum 100%V RRM reapplied t = 10 ms t = 8.3 ms A 146 133 kA2s 102 93 Maximum I 2√t for fusing 2√ I t t = 0.1 ms to 10 ms, no voltage reapplied 1458 kA2√s Maximum on-state voltage drop VTM ITM = 480A , TJ = 25 ° C, 180° conduction 1.65 V Maximum holding current Maximum latching current IH Anode supply = 12 V initial I T = 30 A, TJ = 25 ° C IL Anode supply = 12 V resistive load = 1 Ω Gate pulse: 10 V, 100 μs, TJ = 25 ° C 40~150 mA 400 BLOCKING PARAMETER SYMBOL TEST CONDITIONS Maximum peak reverse and off-state leakage current IRRM, IDRM TJ = 125 ° C RMS isolation Voltage VISO 50 Hz, circuit to base, all terminals shorted Critical rate of rise of off-state voltage dV/dt TJ = TJ maximum, exponential to 67 % rated V DRM Page 2 of 3 VALUES UNITS 30 mA 2500 (1min) 3500 (1s) V 500 V/μs RoHS RoHS NKET161 Series SEMICONDUCTOR Nell High Power Products Fig.1 On-state current vs. voltage characteristic Fig.2 Transient thermal impedance(junction-case) T J = 125 ° C 3.6 2.9 2.2 1.5 0.18 0.15 0.12 0.09 0.06 0.03 0.00 0.8 100 1000 0.001 10000 0.01 0.1 On-state current (A) Time (s) Fig.4 Case temperature vs. on-state average current Fig.3 Power consumption vs. average current 140 350 180° 120° 180 0 300 90° 60° Conduction Angle 250 30° 200 150 120 ase temperature (° C) Maximum power consumption (W) 400 100 180 0 100 Conduction Angle 80 60 40 20 50 90° 60° 30° 120° 180° 0 0 0 50 100 150 200 0 50 100 On-state average current (A) 150 200 300 250 On-state average current (A) Fig.5 On-state surge current vs cycles Fig.6 Gate characteristics 6 2 Peak Forward Gate Voltage (10V) 10 1 5 Gate voltage (V) On-state surge current (KA) 10 1 4 3 Pe Po ak Av we Ga r ( te Po era 10 we ge w) r( G 3w at ) e 5 2 10 0 5 125 ° C 25 ° C 2 2 1 1 10 Cycles @50Hz 100 Peak Gate Current (3A) On-state peak voltage (V) 4.3 Transient thermal impedance (° C/W) 5 10 -1 10 1 -30°C Maximum Gate Voltage that will not trigger any unit 2 5 10 2 2 5 10 3 Gate current (mA) 2 5