PEREGRINE PE4150

Product Specification
PE4150
UltraCMOS™ Low Frequency Passive
Mixer with Integrated LO Amplifier
Product Description
The PE4150 is an ultra-high linearity Quad MOSFET mixer with
an integrated LO amplifier. The LO amplifier allows for LO
drive levels of less than 0dBm to produce IIP3 values similar to
a Quad MOSFET Array driven with a 15dBm LO drive. The
PE4150 operates with differential signals at the RF and IF ports
and the integrated LO buffer amplifier drives the mixer core. It
can be used as an upconverter or a downconverter.
Features
The PE4150 is manufactured on Peregrine’s UltraCMOS™
process, a patented variation of silicon-on-insulator (SOI)
technology on a sapphire substrate, offering the performance
of GaAs with the economy and integration of conventional
CMOS.
• High LO Isolation
• Ultra-high linearity Quad MOSFET array
with integrated LO amplifier
• Ideal for mobile radio and Up/down
conversion applications
• Low conversion loss
• Packaged in small 20-lead 4x4 mm QFN
Figure 1. Functional Diagram
RF
VDD
LO
EN
GND
Gate
Bias
(optional)
IF
Figure 2. Package Type
4x4 mm 20-Lead QFN
Document No. 70-0242-04 │ www.psemi.com
©2007-2009 Peregrine Semiconductor Corp. All rights reserved.
Page 1 of 10
PE4150
Product Specification
Table 1. AC and DC Electrical Specifications (VDD = 2.9 to 3.1 V, Temperature = -40 to +85 °C unless specified otherwise)
Parameters
Min
Typ
Max
Units
8
12
mA
20
uA
136
380
450
764
851
935
174
470
520
776
870
941
MHz
MHz
MHz
MHz
MHz
MHz
LO Frequency
VHF Band
UHF1 Band
UHF2 Band
700 MHz
800 MHz
900 MHz
245.65
270.35
340.35
873.65
741.35
825.35
283.65
360.35
410.35
885.65
760.35
831.35
MHz
MHz
MHz
MHz
MHz
MHz
IF Output Frequency
44.85
109.65
MHz
-10
-6
dBm
2
dBm
8
8.7
dB
dB
Current Drain (a function of frequency)
Off state leakage current
RF Input Frequency
VHF Band
UHF1 Band
UHF2 Band
700 MHz
800 MHz
900 MHz
LO Input Power
RF Input Power
Conversion Loss
VHF, UHF1, UHF2
700, 800, and 900 MHz
6.5
7.5
3rd Order Input Intercept (IIP3)
20
25
dBm
2nd Order Input Intercept (IIP2)
VHF, UHF1, UHF2
700, 800 and 900 MHz
41
35
60
50
dBm
dBm
RF to IF Isolation1
VHF, UHF1, UHF2
700, 800 and 900 MHz
35
25
50
45
dB
dB
LO to IF Isolation
20
30
dB
LO to RF Isolation
25
30
dB
Note 1: The RF to IF Isolation is measured with an input frequency equal with IF.
©2007-2009 Peregrine Semiconductor Corp. All rights reserved.
Page 2 of 10
Document No. 70-0242-04
│ UltraCMOS™ RFIC Solutions
PE4150
Product Specification
Figure 3. Pin Configuration (Top View)
GND
VDD
VDD
N/C
N/C
20
19
18
17
16
Symbol
RF_M
N/C
4
12
RF_P
N/C
5
11
GND
10
INA
IF_M
GND
13
9
14
3
GND
2
8
INB
IF_P
MixBias
7
15
6
1
VDD
GND
EN
Table 4. Absolute Maximum Ratings
Max
Units
VDD
Supply Voltage
4.0
°C
VDS
Maximum DC plus peak AC
across drain-source
±3.3
V
IDS-DC
Maximum DC current across
drain-source
6
mA
IDS-AC
Maximum AC current across
drain-source
36
mAp-p
Symbol
150
°C
Storage temperature range
Tj
Operating Junction
Temperature
125
°C
ESD Voltage (HBM,
MIL_STD 883 Method
3015.7)
1000
V
VESD
Function
1
GND
Ground
2
INB
Negative LO Input
3
INA
Positive LO Input
4
N/C
No Connect
5
N/C
No Connect
6
EN
Enable Pin (active low)
7
VDD
VDD
8
IF_P
Positive IF port
9
GND
Ground
10
IF_M
Negative IF port
11
GND
Ground
12
RF_P
Positive RF Input
13
RF_M
Negative LO Input
14
GND
Ground
15
MixBias
External Mixer Bias
16
N/C
No Connect
17
N/C
No Connect
18
VDD
VDD
19
VDD
VDD
20
GND
Ground
Electrostatic Discharge (ESD) Precautions
When handling this UltraCMOS™ device, observe
the same precautions that you would use with other
ESD-sensitive devices. Although this device
contains circuitry to protect it from damage due to
ESD, precautions should be taken to avoid
exceeding the specified rating.
Latch-Up Avoidance
Unlike conventional CMOS devices, UltraCMOS™
devices are immune to latch-up.
Device Description
Table 3. Operating Ranges
VDD
VDD Power Supply
Voltage
2.9
TOP
Operating temperature
range
-40
Typ
3.0
Max Units
3.1
V
85
°C
Moisture Sensitivity Level
The Moisture Sensitivity Level rating for the PE4150
in the 20-lead 4x4 QFN package is MSL1.
Document No. 70-0242-04 │ www.psemi.com
-65
Exceeding absolute maximum ratings may cause
permanent damage. Operation should be restricted
to the limits in the Operating Ranges table.
Operation between operating range maximum and
absolute maximum for extended periods may reduce
reliability.
The RF and IF pins are differential signals
connected directly to the passive mixer. The LO
input can be differential or single-ended.
Symbol Parameters/Conditions Min
Min
TST
Table 2. Pin Descriptions
Pin #
Parameters/Conditions
The PE4150 passive broadband Quad MOSFET
array is designed for use in up-conversion and
down-conversion applications for high performance
systems such as mobile radios, cellular
infrastructure equipment, and STB/CATV systems.
The PE4150 is an ideal mixer core for a wide range
of mixer products, including module level solutions
that incorporate baluns or other single-ended
matching structures enabling three-port operation.
The performance level of this passive mixer is made
possible by the very high linearity afforded by
Peregrine’s UltraCMOS™ process.
©2007-2009 Peregrine Semiconductor Corp. All rights reserved.
Page 3 of 10
PE4150
Product Specification
Evaluation Kit
The Mixer Evaluation Kit board was designed to
ease customer evaluation of the PE4150 Quad
MOSFET Mixer with intergrated LO amplifier.
Figure 4. Evaluation Board Layout
Peregrine Specification 101/0201
The RF and IF ports are connected through
50ohm transmission lines and 1:4 transmission
line transformers to J5 and J7, respectively. The
LO ports are connected through 50ohm
transmission lines to J4 and J6, respectively, and
can support either a single-ended or differential
signal drive. With a single-ended input, no
termination is needed on the un-used port.
The board is constructed of a two metal layer FR4
with a total thickness of 0.062". The bottom layer
provides ground for the RF transmission lines.
The transmission lines were designed using a
coplanar waveguide with ground plane model
using a trace width of 0.037", trace gaps of 0.008",
dielectric thickness of 0.059" and metal thickness
of 0.0015".
J3 provides an optional external DC bias that can
be applied to the LO input, if there is DC
component to the applied RF input. To use this
option, transformers T2 and T3 must be carefully
chosen to allow the use of a non-zero commonmode level.
J9 can be used to enable or disable the part. The
chip enable /EN is active low.
De-coupling capacitors are provided on the VDD
traces. These capacitors should be placed as
close to the DVDD pin as possible.
Applications Support
If you have a problem with your evaluation kit or if
you have applications questions, please contact
applications support:
E-Mail: [email protected] (fastest response)
Phone: (858) 731-9400
©2007-2009 Peregrine Semiconductor Corp. All rights reserved.
Page 4 of 10
Document No. 70-0242-04
│ UltraCMOS™ RFIC Solutions
PE4150
Product Specification
Figure 5. Evaluation Board Schematic
Peregrine Specification 102/0396
J11
HEADER 2
Z=50 Ohm
R1
Place C1,C2,C4,C5 close to DVDD Pin.
VDD
J1
DNI
OUTB (NOT USED - SEE NOTE 5)
DNI
VDD
1
2
VDD
C1
10pF
R2
C2
0.01µF
Z=50 Ohm
J2
DNI
Z=50 Ohm
J3
DNI
OUTA (NOT USED - SEE NOTE 5)
DNI
C3
10µF
C4
10pF
C5
0.01µF
MIXBIAS
(OPTIONAL)
1
GND
2
INB
16
18
19
17
N/C
N/C
14
DNI
RF_N
13
RF_P
12
GND
11
T3
ETK4-2T
6
R15
51 Ohm
1
6
R9
2
3
Z=50 Ohm
DNI
4
IF_N
R16
DNI
R17
0 OHM
J5
SMASM
RF
R13
DNI
10
N/C
GND
51pF
9
C7
5
0 OHM
R14
DNI
R8
GND
N/C
EN
R12
INA
15
U1
MLPQ4X4
INA
IF_P
4
8
3
Z=50 Ohm
R5
DNI
MIXBIAS
51 Ohm
LO
J6
SMASM
VDD_2
51pF
GND
C6
R7
VDD_1
R4
0 OHM
R6
DNI
VDD_2
Z=50 Ohm
7
J4
DNI
INB
20
R3
0 OHM
R10
DNI
R11
DNI
VDD
R18
J10
DNI
1
2
3
R19
DNI
DNI
VDD
LG2
R20
DNI
R21
DNI
J8
DNI
LG1
R22
J9
CON3
T2
ETK4-2T
LG0
6
VDD
4
1
2
3
0 OHM
1
2
VDD
3
1
2
3
R23
DNI
Mounting Holes on PCB
1
1
1
1
R24
DNI
MTG1
MTG2
MTG3
MTG4
R25
Z=50 Ohm
DNI
J7
SMASM
IF
Document No. 70-0242-04 │ www.psemi.com
©2007-2009 Peregrine Semiconductor Corp. All rights reserved.
Page 5 of 10
PE4150
Product Specification
Typical Performance Plots
Figure 6. Conversion Loss vs Temperature
Figure 7. Conversion Loss vs LO Power & VDD
(VDD = 3V; LO Pwr = -10 dBm)
+25 deg C
+85 deg C
9
9
8
8
7
7
6
6
Loss [dB]
Loss [dB]
-40 deg C
(Temp = 25 deg C)
5
4
LO_Pw r
LO_Pw r
LO_Pw r
LO_Pw r
LO_Pw r
LO_Pw r
5
4
3
3
2
2
1
1
0
0
0
200
400
600
800
0
1000
200
Figure 8. Linearity vs Temperature
80
600
800
1000
Figure 9. Linearity vs LO Power
(VDD = 3V; LO Pwr = -10 dBm)
IIP2 @ -40 deg C
IIP2 @ +85 deg C
IIP3 @ +25 deg C
400
Frequency [MHz]
Frequency [MHz]
(VDD = 3V; Temp = +25 deg C)
IIP2 @ +25 deg C
IIP3 @ -40 deg C
IIP3 @ +85 deg C
70
70
60
60
50
50
40
30
20
10
IIP2 w / LO_Pw r
IIP2 w / LO_Pw r
IIP3 w / LO_Pw r
IIP3 w / LO_Pw r
80
Loss[dBm]
[dB]
IIP2/IIP3
Loss[dBm]
[dB]
IIP2/IIP3
= -11dBm; VDD=3V
= -10dBm; VDD=3V
= -6dBm;VDD=3V
= -5dBm; VDD=3V
= -10dBm; VDD = 2.91V
= -10dBm; VDD = 3.09
= -11dBm
= -6dBm
= -11dBm
= -6dBm
IIP2 w / LO_Pw r
IIP2 w / LO_Pw r
IIP3 w / LO_Pw r
IIP3 w / LO_Pw r
= -10dBm
= -5dBm
= -10dBm
= -5dBm
40
30
20
10
0
0
0
200
400
600
800
Frequency [MHz]
©2007-2009 Peregrine Semiconductor Corp. All rights reserved.
Page 6 of 10
1000
0
200
400
600
800
1000
Frequency [MHz]
Document No. 70-0242-04 │ UltraCMOS™ RFIC Solutions
PE4150
Product Specification
Typical Performance Plots
Figure 10. Linearity vs VDD
Figure 11. Isolation vs Temperature
(Temp = +25 deg C; LO Pwr = -10 dBm)
IIP2 w / VDD = 2.91V
IIP2 w / VDD = 3.09V
IIP3 w / VDD = 3.0V
80
(VDD = 3V; LO Pwr = -10 dBm)
IIP2 w / VDD = 3.0V
IIP3 w / VDD = 2.91V
IIP3 w / VDD = 3.09
70
70
50
Loss [dB]
Isolation
[dB]
50
40
30
20
40
30
20
10
10
0
0
0
200
400
600
800
0
1000
200
Figure 12. Isolation vs LO Power
50
50
Loss [dB]
Isolation
[dB]
60
40
30
40
30
20
20
10
10
0
0
400
600
Frequency [MHz]
Document No. 70-0242-04 │ www.psemi.com
1000
800
1000
LO-IF Iso w / VDD=2.91V
LO-IF Iso w / VDD=3.0V
LO-IF Iso w / VDD=3.09V
RF-IF Iso w / VDD=2.91V
RF-IF Iso w / VDD=3.0V
RF-IF Iso w / VDD=3.09V
70
60
200
800
(Temp = +25 deg C; LO Pwr = -10 dBm)
LO-IF Iso w / LO_Pw r = -11dBm
LO-IF Iso w / LO_Pw r = -10dBm
LO-IF Iso w / LO_Pw r = -6dBm
LO-IF Iso w / LO_Pw r = -5dBm
RF-IF Iso w / LO_Pw r = -11dBm
RF-IF Iso w / LO_Pw r = -10dBm
RF-IF Iso w / LO_Pw r = -6dBm
RF-IF Iso w / LO_Pw r = -5dBm
0
600
Figure 13. Isolation vs VDD
(VDD = 3V; Temp = +25 deg C)
70
400
Frequency [MHz]
Frequency [MHz]
Loss [dB]
Isolation
[dB]
LO-IF Iso @ +25 deg C
RF-IF Iso @ -40 deg C
RF-IF Iso @ +85 deg C
60
60
Loss [dB]
IIP2/IIP3
[dBm]
LO-IF Iso @ -40 degC
LO-IF Iso @ +85 deg C
RF-IF Iso @ +25 deg C
0
200
400
600
800
1000
Frequency [MHz]
©2007-2009 Peregrine Semiconductor Corp. All rights reserved.
Page 7 of 10
PE4150
Product Specification
Figure 14. Package Drawing
4x4 mm 20-lead QFN
©2007-2009 Peregrine Semiconductor Corp. All rights reserved.
Page 8 of 10
Document No. 70-0242-04
│ UltraCMOS™ RFIC Solutions
PE4150
Product Specification
Figure 15. Tape and Reel Drawing
Tape Feed Direction
Pin 1
A0 = 4.35
B0 = 4.35
K0 = 1.1
Top of
Device
Device Orientation in Tape
Figure 16. Marking Specification
4150
YYWW
ZZZZZ
YYWW = Date Code (Year, Work Week)
ZZZZZ = Last five digits of PSC Lot Number
Table 5. Ordering Information
Order Code Part Marking
Description
Package
Shipping Method
EK-4150-01
PE4150 -EK
PE4150 – 20QFN 4x4mm-EK
Evaluation Kit
1 / Box
PE4150 MLI
4150
PE4150 G - 20QFN 4x4mm-75A
Green 20-lead 4x4mm QFN
75 units / Tube
PE4150 MLI-Z
4150
PE4150 G –20QFN 4x4mm-3000C
Green 20-lead 4x4mm QFN
3000 units / T&R
Document No. 70-0242-04 │ www.psemi.com
©2007-2009 Peregrine Semiconductor Corp. All rights reserved.
Page 9 of 10
PE4150
Product Specification
Sales Offices
The Americas
Peregrine Semiconductor Corporation
Peregrine Semiconductor, Asia Pacific (APAC)
9380 Carroll Park Drive
San Diego, CA 92121
Tel: 858-731-9400
Fax: 858-731-9499
Shanghai, 200040, P.R. China
Tel: +86-21-5836-8276
Fax: +86-21-5836-7652
Europe
Peregrine Semiconductor Europe
Bâtiment Maine
13-15 rue des Quatre Vents
F-92380 Garches, France
Tel: +33-1-4741-9173
Fax : +33-1-4741-9173
High-Reliability and Defense Products
Peregrine Semiconductor, Korea
#B-2607, Kolon Tripolis, 210
Geumgok-dong, Bundang-gu, Seongnam-si
Gyeonggi-do, 463-943 South Korea
Tel: +82-31-728-3939
Fax: +82-31-728-3940
Peregrine Semiconductor K.K., Japan
Teikoku Hotel Tower 10B-6
1-1-1 Uchisaiwai-cho, Chiyoda-ku
Tokyo 100-0011 Japan
Tel: +81-3-3502-5211
Fax: +81-3-3502-5213
Americas
San Diego, CA, USA
Phone: 858-731-9475
Fax: 848-731-9499
Europe/Asia-Pacific
Aix-En-Provence Cedex 3, France
Phone: +33-4-4239-3361
Fax: +33-4-4239-7227
For a list of representatives in your area, please refer to our Web site at: www.psemi.com
Data Sheet Identification
Advance Information
The product is in a formative or design stage. The data
sheet contains design target specifications for product
development. Specifications and features may change in
any manner without notice.
Preliminary Specification
The data sheet contains preliminary data. Additional data
may be added at a later date. Peregrine reserves the right
to change specifications at any time without notice in order
to supply the best possible product.
Product Specification
The data sheet contains final data. In the event Peregrine
decides to change the specifications, Peregrine will notify
customers of the intended changes by issuing a CNF
(Customer Notification Form).
©2007-2009 Peregrine Semiconductor Corp. All rights reserved.
Page 10 of 10
The information in this data sheet is believed to be reliable.
However, Peregrine assumes no liability for the use of this
information. Use shall be entirely at the user’s own risk.
No patent rights or licenses to any circuits described in this
data sheet are implied or granted to any third party.
Peregrine’s products are not designed or intended for use in
devices or systems intended for surgical implant, or in other
applications intended to support or sustain life, or in any
application in which the failure of the Peregrine product could
create a situation in which personal injury or death might occur.
Peregrine assumes no liability for damages, including
consequential or incidental damages, arising out of the use of
its products in such applications.
The Peregrine name, logo, and UTSi are registered trademarks
and UltraCMOS, HaRP, MultiSwitch and DuNE are trademarks
of Peregrine Semiconductor Corp.
Document No. 70-0242-04
│ UltraCMOS™ RFIC Solutions