RF501B2S Diodes Fast recovery diode (Silicon epitaxial planer) RF501B2S zApplications General rectification zLand size figure zExternal dimensions (Unit : mm) 6.0 6.5±0.2 5.1±0.2 0.1 6.0 0.5±0.1 1.5±0.3 C0.5 1.6 9.5±0.6 5.5±0.3 0.1 1.6 1.5 0.75 2.5 ① 3.0 2.0 zFeatures 1) Power mold type (CPD) 2) High reliability 3) Low VF 4) Very fast recovery 5) Low switching loss 2.3±0.2 0.1 2.3 2.3 CPD 0.9 （2） （1） （3） 0.65±0.1 0.5±0.1 zConstruction Silicon epitaxial planer zStructure 1.0±0.2 2.3±0.2 2.3±0.2 ROHM : CPD JEITA : SC-63 ① Manufacture Date zTaping dimensions (Unit : mm) 2.0±0.05 φ1.55±0.1 0 8.0±0.1 0.4±0.1 zAbsolute maximum ratings (Ta=25°C) Parameter Limits Symbol VRM Reverse voltage (repetitive peak) 200 VR Reverse voltage (DC) 200 Average rectified forward current (*1) 5 Io IFSM Forward current surge peak （60Hz・1cyc） 40 Junction temperature 150 Tj Storage temperature -55 to +150 Tstg (*1) Business frequencies, Rating of R-load, 1/2 lo per diode, TC=180℃ 10.1±0.1 10.1±0.1 φ3.0±0.1 8.0±0.1 0～0.5 6.8±0.1 13.5±0.2 TL 16.0±0.2 7.5±0.05 2.5±0.1 4.0±0.1 2.7±0.2 Unit V V A A ℃ ℃ zElectrical characteristic (Ta=25°C) Parameter Forward voltage Reverse current Reverse recovery time Symbol VF IR trr Min. - Typ. 0.86 0.015 15 Max. 0.92 1 30 Unit V µA ns Conditions IF=5A VR=200V IF=0.5A,IR=1A,Irr=0.25*IR Rev.B 1/3 RF501B2S Diodes zElectrical characteristic curves Ta=150℃ 10000 10 1000 Ta=125℃ f=1MHz 1 Ta=125℃ 0.1 Ta=25℃ Ta=75℃ Ta=-25℃ 0.01 1000 CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE CURRENT:IR(nA) FORWARD CURRENT:IF(A) Ta=150℃ Ta=75℃ 100 Ta=25℃ 10 Ta=-25℃ 1 100 10 0.001 0 100 200 300 400 500 600 700 800 900 100 0 1 0.1 0 50 100 150 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 860 AVE:859.4mV AVE:856.6mV 80 30 70 60 50 40 30 Ta=25℃ f=1MHz VR=0V n=10pcs 190 CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE CURRENT:IR(nA) 870 850 Ta=25℃ Ta=25℃ VR=200V VR=200 n=30pcs V n=30pcs 90 Ta=25℃ Ta=25℃ IF=3A IF=5A n=30pcs n=30pcs 880 10 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 200 100 890 FORWARD VOLTAGE:VF(mV) 0 200 AVE:10.7nA AVE:4.60nA 20 180 170 AVE:174.9pF 160 10 0 840 150 VF DISPERSION MAP IR DISPERSION MAP 1000 30 8.3ms 200 150 AVE:167.0A 100 50 Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 25 20 PEAK SURGE FORWARD CURRENT:IFSM(A) 1cyc Ifsm 250 RESERVE RECOVERY TIME:trr(ns) PEAK SURGE FORWARD CURRENT:IFSM(A) 300 Ct DISPERSION MAP 15 10 AVE:14.5ns 5 0 Ifsm 8.3ms 8.3ms 100 10 1 0 1 trr DISPERSION MAP IFSM DISRESION MAP 1000 1cyc 100 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 10 Ifsm t 100 10 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 Rth(j-a) 10 Rth(j-c) IM=100mA 1 0.1 0.001 1ms IF=1A DC 8 FORWARD POWER DISSIPATION:Pf(W) TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) PEAK SURGE FORWARD CURRENT:IFSM(A) Mounted on epoxy board D=1/2 6 Sin(θ＝180) 4 2 time 300us 0 0.1 10 TIME:t(s) Rth-t CHARACTERISTICS 1000 0 2 4 6 8 10 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS Rev.B 2/3 RF501B2S Diodes T D=1/2 6 4 Sin(θ＝180) 2 t DC 8 VR D=t/T VR=100V T Tj=150℃ ELECTROSTATIC DISCHARGE TEST ESD(KV) 8 VR D=t/T VR=100V Tj=150℃ Io 0A 0V 10 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) t DC AVERAGE RECTIFIED FORWARD CURRENT:Io(A) Io 0A 0V 10 D=1/2 6 4 Sin(θ＝180) 2 0 0 0 25 50 75 100 125 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 150 30 No break at 30kV No break at 30kV C=200pF R=0Ω C=100pF R=1.5kΩ 25 20 15 10 5 0 0 25 50 75 100 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) 125 150 ESD DISPERSION MAP Rev.B 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1