RF101L2S Diodes Fast recovery Diode RF101L2S zApplications General rectification z Land size figure (Unit : mm) z External dimensions (Unit : mm) 2.0 2.0 2.6±0.2 ① ② 0.1±0.02 0.1 zStructure 2.0±0.2 1.5±0.2 zConstruction Silicon epitaxial planar 5.0±0.3 6 4.5±0.2 6 1.2±0.3 4.2 zFeatures 1) Small power mold type. (PMDS) 2) Ultra low VF 3) Very fast recovery 4) Low switching loss ROHM : PMDS JEDEC : SOD-106 ① ② Manufacture date z Taping specifications (Unit : mm) 2.0±0.05 4.0±0.1 0.3 12±0.2 5.5±0.05 5.3±0.1 0.05 9.5±0.1 1.75±0.1 φ1.55±0.05 φ1.55 2.9±0.1 4.0±0.1 2.8MAX zAbsolute maximum ratings (Ta=25°C) Parameter Limits Symbol VRM 200 Rverse voltage (repetitive peak) VR Reverse voltage (DC) 200 1 Average rectified forward current (*1) Io IFSM 20 Forward peak surge current (60Hz・1cyc.) 150 Junction temperature Tj -55 to +150 Storage temperature Tstg (*1)Tc=90℃max Mounted on epoxy board. 180°Half sine wave Unit V V A A ℃ ℃ zElectrical characteristics (Ta=25°C) Parameter Forward voltage Reverse current Reverse recovery time Symbol VF IR trr Min. - Typ. 0.815 0.01 12 Max. 0.87 10 25 Unit V µA ns Conditions IF=1.0A VR=200V IF=0.5A,IR=1A,Irr=0.25*IR Rev.A 1/3 RF101L2S Diodes zElectrical characteristic curves (Ta=25°C) 1 Ta=150℃ 10000 100 Ta=125℃ 0.1 Ta=125℃ Ta=75℃ 0.01 Ta=25℃ Ta=-25℃ 1000 Ta=75℃ 100 Ta=25℃ 10 Ta=-25℃ 1 0.1 0 1 0 100 200 300 400 500 600 700 800 900 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 50 100 150 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 200 0 100 REVERSE CURRENT:IR(uA) FORWARD VOLTAGE:VF(mV) 840 830 820 810 AVE:818.6mV 800 80 60 50 40 AVE:11.1nA 30 20 70 50 40 30 AVE:37.0pF 20 10 0 0 Ct DISPERSION MAP 1000 8.3ms 100 50 AVE:63.0A Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 25 20 15 10 AVE:12.2ns 5 0 PEAK SURGE FORWARD CURRENT:IFSM(A) RESERVE RECOVERY TIME:trr(ns) 1cyc Ifsm 30 60 10 30 Ifsm 8.3ms 8.3ms 1cyc 100 10 1 0 1 trr DISPERSION MAP IFSM DISRESION MAP 10 100 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 1000 Ifsm t 2 Rth(j-a) 100 100 10 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 Rth(j-c) 10 IM=10mA IF=100mA DC 1.5 FORWARD POWER DISSIPATION:Pf(W) TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) 1000 1 80 IR DISPERSION MAP 200 25 Ta=25℃ f=1MHz VR=0V n=10pcs 90 70 VF DISPERSION MAP 150 5 10 15 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 100 Ta=25℃ VR=200V n=30pcs 90 Ta=25℃ IF=1A n=30pcs CAPACITANCE BETWEEN TERMINALS:Ct(pF) 850 PEAK SURGE FORWARD CURRENT:IFSM(A) 10 0.01 0.001 PEAK SURGE FORWARD CURRENT:IFSM(A) CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE CURRENT:IR(nA) FORWARD CURRENT:IF(A) f=1MHz f=1MHz Ta=150℃ D=1/2 Sin(θ＝180) 1 0.5 1ms time 1 0.001 300us 0.01 0.1 1 10 100 TIME:t(s) Rth-t CHARACTERISTICS 0 1000 0 0.5 1 1.5 2 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS Rev.A 2/3 RF101L2S Diodes 3 2 DC Io V VR t t D=t/ D=t/T VR=100V T T Tj=150℃ D=1/2 1 Sin(θ＝180) 0 0 25 50 75 100 125 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 150 0A0 0V0 30 Io t t 2 DC VR D=t/T T VR=100V T Tj=150℃ D=1/2 1 Sin(θ＝180) No break at 30kV ELECTROSTATIC DISCHARGE TEST ESD(KV) 0A 0V AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 3 25 20 15 10 AVE:13.6kV 5 0 0 0 25 50 75 100 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) 125 150 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP Rev.A 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1