S T M6926 S amHop Microelectronics C orp. Mar.29 ,2007 Dual N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S 40V ID R DS (ON) S uper high dense cell design for low R DS (ON ). ( m ıΩ ) Max R ugged and reliable. 16 @ V G S = 10V 8.5A S urface Mount P ackage. E S D P rotected. 18 @ V G S = 4.5V D1 D1 D2 D2 8 7 6 5 1 2 3 S1 G1 S 2 S O-8 1 4 G2 ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) S ymbol Limit Unit Drain-S ource Voltage V DS 40 V Gate-S ource Voltage V GS 20 V 8.5 A 7 A IDM 32 A IS 1.7 A P arameter 25 C a Drain C urrent-C ontinuous @ Ta ID 70 C -P ulsed b Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Ta= 25 C PD Ta=70 C Operating Junction and S torage Temperature R ange 2 1.44 W T J , T S TG -55 to 150 C R JA 62.5 C /W THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-Ambient a 1 STM6926 ELECTRICAL CHARACTERISTICS (TA= 25 C unless otherwise noted) Parameter 5 Min Typ C Max Unit Symbol Condition Drain-Source Breakdown Voltage BVDSS VGS =0V, ID = 250uA Zero Gate Voltage Drain Current IDSS VDS=32V, VGS = 0V 1 uA Gate-Body Leakage IGSS VGS = 20V, VDS =0V 10 uA Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250uA 1.7 3 V Drain-Source On-State Resistance RDS(ON) VGS= 10V, ID = 10A 12 16 m ohm VGS = 4.5V, ID = 6A 14 18 m ohm OFF CHARACTERISTICS 40 V ON CHARACTERISTICS b Forward Transconductance DYNAMIC CHARACTERISTICS CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Rise Time Turn-Off Delay Time 20 A 25 S 1500 PF 220 PF 145 PF 23 ns 22 ns 88 ns 27 ns VDS =15V, ID = 10A,VGS =10V 28 nC VDS =15V, ID = 10A,VGS =4.5V 12 nC VDS =15V, ID = 10A VGS =10V 3 nC 6 nC VDS = 10V, ID =10A c Input Capacitance Turn-On Delay Time VDS = 10V, VGS = 10V ID(ON) gFS On-State Drain Current 1 VDS =20V, VGS = 0V f =1.0MHZ c tD(ON) VDD = 15V ID = 1A VGS = 10V RGEN = 6 ohm t tD(OFF) Fall Time t Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 2 S T M6926 E LE CTR ICAL CHAR ACTE R IS TICS (T A=25 C unless otherwise noted) Parameter DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS b Diode Forward Voltage 0.73 V GS = 0V, Is =1.7A VSD 1.2 Notes a.S urface Mounted on FR 4 Board, t 10sec. b.Pulse Test:Pulse Width 300us, Duty Cycle 2%. c.Guaranteed by design, not subject to production testing. 60 20 V G S =4V T j =125 C VG S=4.5 V 40 I D , Drain C urrent (A) ID , Drain C urrent(A) 50 VG S =10V 30 20 V G S =3V 10 V G S =2.5V 0 15 -55 C 10 25 C 5 0 0 0.5 1 1.5 2 2.5 3 0.8 0 2.4 3.2 4.0 4.8 Figure 2. Transfer Characteristics Figure 1. Output Characteristics 1.75 20 1.60 RDS(ON), On-Resistance Normalized 24 16 1.6 VGS, Gate-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) RDS(on) (m Ω ı ) 5 C Min Typ Max Unit Condition S ymbol V G S =4.5V 12 V G S =10V 8 4 VGS=10V ID=10A 1.45 1.30 VGS=4.5V ID=6A 1.15 1.0 0 1 1 5 10 15 20 25 0 30 25 50 75 100 125 150 Tj( C) ID, Drain Current (A) Tj, Junction Temperature ( C) Figure 3. On-Resistance vs. Drain Current and Gate Voltage Figure 4. On-Resistance Variation with Drain Current and Temperature 3 V S T M6926 B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage 1.4 V DS =V G S I D =250uA 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 1.15 I D =250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 100 125 0 25 50 75 100 125 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature F igure 6. B reakdown V oltage V ariation with T emperature 36 20.0 I D =10A Is , S ource-drain current (A) R DS (on) (m Ω ı ) 30 24 125 C 18 12 75 C 25 C 6 0 25 C 10.0 75 C 125 C 1.0 0 2 4 6 8 10 0.2 0.4 0.6 0.8 1.0 1.2 V G S , G ate-S ource Voltage (V ) V S D , B ody Diode F orward V oltage (V ) F igure 7. On-R es is tance vs . G ate-S ource V oltage F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 4 STM6926 10 VGS, Gate to Source Voltage (V) 2400 C , C apacitance (pF ) 2000 6 C is s 1600 1200 800 C os s 400 C rs s 6 4 2 0 0 0 VDS=15V ID=10A 8 5 10 15 20 25 0 30 3 VDS, Drain-to Source Voltage (V) 6 9 15 12 18 21 24 Qg, Total Gate Charge (nC) Figure 10. Gate Charge Figure 9. Capacitance 50 TD(on) 10 V DS =15V ,ID=1A 1 1 0.1 0.03 6 10 S 10 V G S =10V 1 10 RD ID, Drain Current (A) Switching Time (ns) Tf (O 10 Tr TD(off) 100 60 N) Lim it 600 DC ms s 1s VGS=10V Single Pulse TA=25 C 0.1 60 100 300 600 0m 1 10 30 50 VDS, Drain-Source Voltage (V) Rg, Gate Resistance (Ω) Figure 12. Maximum Safe Operating Area Figure 11.switching characteristics Thermal Resistance Normalized Transient 9 1 0.5 0.2 0.1 0.1 P DM 0.05 t1 t2 0.02 0.01 Single Pulse 0.01 0.00001 1. RthJA (t)=r (t) * R JAth 2. R th JA=See Datasheet 3. TJM-TA = PDM* R JA th (t) 4. Duty Cycle, D=t1/t2 on 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve 5 10 100 1000 STM6926 PACKA GE OUTLINE DIMENSIONS SO-8 1 L E D A C 0.015X45± e B 0.05 TYP. A1 0.008TYP. 0.016 TYP. H MILLIMETERS INCHES SYMBOLS MIN A A1 D E 1.35 0.10 4.80 3.81 H L 5.79 0.41 0± MAX 1.75 0.25 4.98 3.99 6.20 1.27 8± 6 MIN 0.053 0.004 0.189 0.150 0.228 0.016 0± MAX 0.069 0.010 0.196 0.157 0.244 0.050 8± STM6926 SO-8 Tape and Reel Data SO-8 Carrier Tape unit:р PACKAGE SOP 8N 150п A0 B0 K0 D0 2.10 ӿ1.5 (MIN) REEL SIZE M N ӿ330 330 ² 1 62 ²1.5 6.40 5.20 D1 E ӿ1.5 + 0.1 - 0.0 12.0 ²0.3 E1 1.75 E2 P0 P1 P2 T 5.5²0.05 8.0 4.0 2.0²0.05 0.3²0.05 K S G R V SO-8 Reel UNIT:р TAPE SIZE 12 р W W1 H 12.4+ 0.2 16.8- 0.4ӿ12.75 + 0.15 7 2.0²0.15