S T M6962 S amHop Microelectronics C orp. Aug 29.2006 Dual N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS (ON) S uper high dense cell design for low R DS (ON ). ( m W ) Max R ugged and reliable. 36 @ V G S = 10V 60V 6.5A S urface Mount P ackage. 42 @ V G S = 4.5V D1 D1 D2 D2 8 7 6 5 1 2 3 S1 G1 S 2 S O-8 1 4 G2 ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) S ymbol Limit Unit Drain-S ource Voltage V DS 60 V Gate-S ource Voltage V GS 20 V 6.5 5.5 A A IDM 25 A IS 1.7 A P arameter 25 C a Drain C urrent-C ontinuous @ Ta -P ulsed ID 70 C b Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a 2 Ta= 25 C PD Ta=70 C Operating Junction and S torage Temperature R ange T J , T S TG 1.44 W -55 to 150 C 62.5 C /W THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-Ambient a R JA 1 S T M6962 E LE CTR ICAL CHAR ACTE R IS TICS (T A 25 C unless otherwise noted) Parameter 5 Min Typ C Max Unit S ymbol Condition Drain-S ource Breakdown Voltage BV DS S V GS = 0V, ID = 250uA Zero Gate Voltage Drain Current IDS S V DS = 48V, V GS = 0V 1 Gate-Body Leakage IGS S V GS = 20V, V DS = 0V 100 nA Gate Threshold Voltage V GS (th) V DS = V GS , ID = 250uA Drain-S ource On-S tate R esistance R DS (ON) On-S tate Drain Current ID(ON) gFS OFF CHAR ACTE R IS TICS 60 V uA ON CHAR ACTE R IS TICS b Forward Transconductance 1.8 3.0 V V GS =10V, ID = 6.5A 29 36 m ohm V GS =4.5V, ID= 4A 32 42 m ohm V DS = 5V, V GS = 10V 1.0 20 A 14 S 1200 PF 135 PF 80 PF 5 ohm 18 ns 19 ns 48 ns 12 ns V DS =48V, ID =4.5A,V GS =10V 25 nC V DS =48V, ID =4.5A,V GS =4.5V 13 nC 2.6 nC nC V DS = 5V, ID = 6.5A DYNAMIC CHAR ACTE R IS TICS c Input Capacitance C IS S Output Capacitance C OS S R everse Transfer Capacitance CRSS Gate resistance Rg S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time V DS =25V, V GS = 0V f =1.0MH Z V GS =0V, V DS = 0V, f=1.0MH Z c tD(ON) tr tD(OFF) Fall Time tf Total Gate Charge Qg Gate-S ource Charge Q gs Gate-Drain Charge Q gd V DD = 30V ID = 4.5 A V GS = 10V R GE N = 3 ohm V DS =48V, ID = 4.5 A V GS =10V 2 7 S T M6962 E LE CTR ICAL CHAR ACTE R IS TICS (T A=25 C unless otherwise noted) Parameter C Min Typ Max Unit Condition S ymbol DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS b Diode Forward Voltage V GS = 0V, Is =1.7A VSD 0.8 1.2 Notes a.S urface Mounted on FR 4 Board, t 10sec. b.Pulse Test:Pulse Width 300us, Duty Cycle 2%. c.Guaranteed by design, not subject to production testing. 20 20 V G S =10V V G S =4.5V 16 I D , Drain C urrent (A) ID , Drain C urrent(A) 16 V G S =3.5V 12 8 V G S =3V 4 T j=125 C 12 8 25 C -55 C 4 V G S =2.5V 0 0 0.5 1.5 1.0 2.0 2.5 0 0.0 3.0 V DS , Drain-to-S ource Voltage (V ) F igure 1. Output C haracteris tics 1.8 2.4 3.0 3.6 R DS (ON) , On-R es is tance Normalized 2.0 55 R DS (on) (m W) 1.2 F igure 2. Trans fer C haracteris tics 66 44 V G S =4.5V 33 V G S =10V 22 11 1 0.6 V G S , G ate-to-S ource Voltage (V ) 1 4 8 12 16 1.8 1.4 1.2 V G S =4.5V I D =4A 1.0 0 20 V G S =10V I D =6.5A 1.6 0 25 50 75 100 125 150 T j( C ) I D , Drain C urrent (A) T j, J unction T emperature ( C ) F igure 3. On-R es is tance vs . Drain C urrent and G ate V oltage 3 F igure 4. On-R es is tance Variation with Drain C urrent and Temperature V B V DS S , Normalized Drain-S ource B reakdown V oltage 1.3 V DS =V G S I D =250uA 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 1.15 I D =250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature F igure 6. B reakdown V oltage V ariation with T emperature 90 20.0 I D =6.5A Is , S ource-drain current (A) 75 R DS (on) (m W) 6 V th, Normalized G ate-S ource T hres hold V oltage S T M6962 60 125 C 45 30 15 0 25 C 75 C 25 C 10.0 5.0 125 C 75 C 1.0 0 2 4 6 8 10 0 V G S , G ate-S ource Voltage (V ) 0.3 0.6 0.9 1.2 1.5 V S D , B ody Diode F orward V oltage (V ) F igure 7. On-R es is tance vs . G ate-S ource V oltage F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 4 S T M6962 C is s C , C apacitance (pF ) 1250 6 V G S , G ate to S ource V oltage (V ) 1500 1000 750 500 C os s 250 C rs s 0 0 10 V DS =48V I D =6.5A 8 6 4 2 0 5 10 15 20 25 0 30 4 16 20 24 28 32 Qg, T otal G ate C harge (nC ) V DS , Drain-to S ource Voltage (V ) F igure 10. G ate C harge F igure 9. C apacitance 50 100 60 I D , Drain C urrent (A) 600 S witching T ime (ns ) 12 8 Tr Tf 10 V DS =30V ,ID=6.5A 1 30 10 RD 10 1 DC 1s 0m ms s V G S =10V S ingle P ulse T A =25 C 0.1 0.03 60 100 300 600 6 10 ( it 10 V G S =10 V 1 S L im ) ON 0.1 R g, G ate R es is tance ( W) 1 10 60 V DS , Drain-S ource V oltage (V ) F igure 12. Maximum S afe O perating Area F igure 11.s witching characteris tics Thermal Resistance Normalized Transient 9 1 0.5 0.2 0.1 0.1 P DM 0.05 t1 0.02 on 0.01 0.01 0.00001 1. 2. 3. 4. Single Pulse 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve 5 10 t2 R thJ A (t)=r (t) * R thJ A R thJ A =S ee Datas heet T J M-T A = P DM* R thJ A (t) Duty C ycle, D=t1/t2 100 1000 S T M6962 PAC K AG E OUT LINE DIME NS IONS S O-8 1 L E D A C 0.015X45° B 0.016 TYP. S Y MB OLS A A1 D E H L A1 e 0.05 TYP. 0.008 TYP. H MILLIME T E R S MIN 1.35 0.10 4.80 3.81 5.79 0.41 0° MAX 1.75 0.25 4.98 3.99 6.20 1.27 8° 6 INC HE S MIN 0.053 0.004 0.189 0.150 0.228 0.016 0° MAX 0.069 0.010 0.196 0.157 0.244 0.050 8° S T M6962 SO-8 Tape and Reel Data SO-8 Carrier Tape unit:㎜ PACKAGE SOP 8N 150㏕ A0 6.40 B0 5.20 D0 D1 E E1 E2 P0 P1 P2 T 2.10 ψ1.5 (MIN) ψ1.5 + 0.1 - 0.0 12.0 ±0.3 1.75 5.5 ±0.05 8.0 4.0 2.0 ±0.05 0.3 ±0.05 K S G R V K0 SO-8 Reel UNIT:㎜ TAPE SIZE REEL SIZE M N W W1 H 12 ㎜ ψ330 330 ± 1 62 ±1.5 12.4 + 0.2 16.8 - 0.4 ψ12.75 + 0.15 7 2.0 ±0.15