STM6962

STM6962
Green
Product
SamHop Microelectronics Corp.
Aug 29.2006
Dual N-Channel Enhancement Mode Field Effect Transistor
FEATURES
PRODUCT SUMMARY
VDSS
ID
RDS(ON)
Super high dense cell design for low RDS(ON).
( m Ω ) Max
Rugged and reliable.
36 @ VGS = 10V
60V
6.5A
Surface Mount Package.
42 @ VGS = 4.5V
D1
D1
D2
D2
8
7
6
5
SO-8
1
1
2
3
4
S1
G1
S2
G2
ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted)
Symbol
Limit
Unit
Drain-Source Voltage
VDS
60
V
Gate-Source Voltage
VGS
20
V
6.5
5.5
A
A
IDM
25
A
IS
1.7
A
Parameter
25 C
a
Drain Current-Continuous @Ta
-Pulsed
ID
70 C
b
Drain-Source Diode Forward Current
Maximum Power Dissipation
a
a
2
Ta= 25 C
PD
Ta=70 C
1.44
Operating Junction and Storage
Temperature Range
TJ, TSTG
W
-55 to 150
C
62.5
C /W
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient
a
R JA
1
S T M6962
E LE CTR ICAL CHAR ACTE R IS TICS (T A 25 C unless otherwise noted)
Parameter
5
Min Typ C Max Unit
S ymbol
Condition
Drain-S ource Breakdown Voltage
BV DS S
V GS = 0V, ID = 250uA
Zero Gate Voltage Drain Current
IDS S
V DS = 48V, V GS = 0V
1
Gate-Body Leakage
IGS S
V GS = 20V, V DS = 0V
100 nA
Gate Threshold Voltage
V GS (th)
V DS = V GS , ID = 250uA
Drain-S ource On-S tate R esistance
R DS (ON)
OFF CHAR ACTE R IS TICS
60
V
uA
ON CHAR ACTE R IS TICS b
Forward Transconductance
3.0
V
V GS =10V, ID = 6.5A
29
36
m ohm
V GS =4.5V, ID= 4A
32
42
m ohm
V DS = 5V, V GS = 10V
ID(ON)
gFS
On-S tate Drain Current
1.8
1.0
20
A
14
S
1200
PF
135
PF
80
PF
5
ohm
18
ns
19
ns
48
ns
12
ns
V DS =48V, ID =4.5A,V GS =10V
25
nC
V DS =48V, ID =4.5A,V GS =4.5V
13
nC
2.6
nC
nC
V DS = 5V, ID = 6.5A
DYNAMIC CHAR ACTE R IS TICS c
Input Capacitance
C IS S
Output Capacitance
C OS S
R everse Transfer Capacitance
CRSS
Gate resistance
Rg
S WITCHING CHAR ACTE R IS TICS
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
V DS =25V, V GS = 0V
f =1.0MH Z
V GS =0V, V DS = 0V, f=1.0MH Z
c
tD(ON)
tr
tD(OFF)
Fall Time
tf
Total Gate Charge
Qg
Gate-S ource Charge
Q gs
Gate-Drain Charge
Q gd
V DD = 30V
ID = 4.5 A
V GS = 10V
R GE N = 3 ohm
V DS =48V, ID = 4.5 A
V GS =10V
2
7
S T M6962
E LE CTR ICAL CHAR ACTE R IS TICS (T A=25 C unless otherwise noted)
Parameter
C
Min Typ Max Unit
Condition
S ymbol
DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS b
Diode Forward Voltage
V GS = 0V, Is =1.7A
VSD
0.8
1.2
Notes
a.S urface Mounted on FR 4 Board, t 10sec.
b.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
c.Guaranteed by design, not subject to production testing.
20
20
V G S =10V
V G S =4.5V
16
I D , Drain C urrent (A)
ID , Drain C urrent(A)
16
V G S =3.5V
12
8
V G S =3V
4
T j=125 C
12
8
25 C
-55 C
4
V G S =2.5V
0
0.0
0
0
0.5
1.5
1.0
2.0
2.5
3.0
V DS , Drain-to-S ource Voltage (V )
1.8
2.4
3.0
3.6
F igure 2. Trans fer C haracteris tics
66
R DS (ON) , On-R es is tance
Normalized
2.0
55
R DS (on) (m Ω)
1.2
V G S , G ate-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
44
V G S =4.5V
33
V G S =10V
22
11
1
0.6
1
4
8
12
16
1.8
1.4
1.2
V G S =4.5V
I D =4A
1.0
0
20
V G S =10V
I D =6.5A
1.6
0
25
50
75
100
125
150
T j( C )
I D , Drain C urrent (A)
T j, J unction T emperature ( C )
F igure 3. On-R es is tance vs . Drain C urrent
and G ate V oltage
3
F igure 4. On-R es is tance Variation with
Drain C urrent and Temperature
V
B V DS S , Normalized
Drain-S ource B reakdown V oltage
1.3
V DS =V G S
I D =250uA
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25
0
25
50
75
1.15
I D =250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25
100 125 150
0
25
50
75
100 125 150
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
F igure 5. G ate T hres hold V ariation
with T emperature
F igure 6. B reakdown V oltage V ariation
with T emperature
90
20.0
I D =6.5A
Is , S ource-drain current (A)
75
R DS (on) (m Ω)
6
V th, Normalized
G ate-S ource T hres hold V oltage
S T M6962
60
125 C
45
30
25 C
75 C
15
0
25 C
10.0
5.0
125 C
75 C
1.0
0
2
4
6
8
10
0
V G S , G ate-S ource Voltage (V )
0.3
0.6
0.9
1.2
1.5
V S D , B ody Diode F orward V oltage (V )
F igure 7. On-R es is tance vs .
G ate-S ource V oltage
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
4
S T M6962
C is s
C , C apacitance (pF )
1250
6
V G S , G ate to S ource V oltage (V )
1500
1000
750
500
C os s
250
C rs s
V DS =48V
I D =6.5A
8
6
4
2
0
0
0
10
5
10
15
20
25
0
30
4
12
16
20
24
28 32
Qg, T otal G ate C harge (nC )
V DS , Drain-to S ource Voltage (V )
F igure 10. G ate C harge
F igure 9. C apacitance
50
100
60
I D , Drain C urrent (A)
600
S witching T ime (ns )
8
Tr
Tf
10
V DS =30V ,ID=6.5A
1
30
10
RD
10
0m
1s
1
ms
s
DC
V G S =10V
S ingle P ulse
T A =25 C
0.1
0.03
60 100 300 600
6 10
(
it
10
V G S =10V
1
S
L im
)
ON
0.1
R g, G ate R es is tance ( Ω)
1
10
60
V DS , Drain-S ource V oltage (V )
F igure 12. Maximum S afe
O perating Area
F igure 11.s witching characteris tics
Thermal Resistance
Normalized Transient
9
1
0.5
0.2
0.1
0.1
P DM
0.05
t1
t2
0.02
1.
2.
3.
4.
0.01
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration(sec)
Normalized Thermal Transient Impedance Curve
5
10
R thJ A (t)=r (t) * R thJ A
R thJ A =S ee Datas heet
T J M-T A = P DM* R thJ A (t)
Duty C ycle, D=t1/t2
100
1000
S T M6962
PAC K AG E OUT LINE DIME NS IONS
S O-8
1
L
E
D
A
C
0.015X45±
e
B
0.05 TYP.
A1
0.008
TYP.
0.016 TYP.
H
MILLIME T E R S
INC HE S
S Y MB OLS
MIN
A
A1
D
E
H
L
1.35
0.10
4.80
3.81
5.79
0.41
0±
MAX
1.75
0.25
4.98
3.99
6.20
1.27
8±
6
MIN
0.053
0.004
0.189
0.150
0.228
0.016
0±
MAX
0.069
0.010
0.196
0.157
0.244
0.050
8±
S T M6962
SO-8 Tape and Reel Data
SO-8 Carrier Tape
unit:р
PACKAGE
SOP 8N
150п
A0
6.40
B0
5.20
K0
D0
D1
2.10
ӿ1.5
(MIN)
ӿ1.5
+ 0.1
- 0.0
M
N
W
E1
E2
12.0
²0.3
1.75
5.5
²0.05
W1
H
K
E
P0
P1
P2
T
8.0
4.0
2.0
²0.05
0.3
²0.05
S
G
R
V
SO-8 Reel
UNIT:р
TAPE SIZE
12 р
REEL SIZE
ӿ330
330
² 1
62
²1.5
12.4
+ 0.2
16.8
- 0.4
7
ӿ12.75
+ 0.15
2.0
²0.15