SAVANTIC 2SC2085

SavantIC Semiconductor
Product Specification
2SC2085
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220 package
·High breakdown voltage
·High transition frequency
APPLICATIONS
·For line-operated AF amplifier and
chrominance output applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
300
V
VCEO
Collector-emitter voltage
Open base
300
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current
0.1
A
ICM
Collector current-peak
0.15
A
PC
Collector power dissipation
10
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
TC=25
SavantIC Semiconductor
Product Specification
2SC2085
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CBO
Collector-base breakdown voltage
IC=100µA ;IE=0
300
V
V(BR)CEO
Collector-emitter breakdown voltage
IC=1mA ;IB=0
300
V
V(BR)EBO
Emitter-base breakdown voltage
IE=100µA ;IC=0
5
V
Collector-emitter saturation voltage
IC=100mA ;IB=10mA
5.0
V
VBE
Base-emitter on voltage
IC=50mA ; VCE=10V
1.2
V
ICEO
Collector cut-off current
VCE=300V;IB=0
20
µA
ICBO
Collector cut-off current
VCB=300V;IE=0
10
µA
IEBO
Emitter cut-off current
VEB=5V; IC=0
10
µA
hFE-1
DC current gain
IC=10mA ; VCE=10V
30
hFE -2
DC current gain
IC=50mA ; VCE=10V
30
COB
Output capacitance
IE=0; VCB=30V;f=1MHz
8
pF
fT
Transition frequency
IC=20mA ; VCE=30V
55
MHz
VCEsat
hFE-2 classifications
P
Q
R
30-60
50-100
80-150
2
150
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3
2SC2085