SavantIC Semiconductor Product Specification BUT11F BUT11AF Silicon NPN Power Transistors DESCRIPTION ·With TO-220Fa package ·High voltage ,high speed APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor control systems PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings (Tc=25 ) SYMBOL PARAMETER VCBO Collector-base voltage VCEO Collector-emitter voltage VEBO Emitter-base voltage CONDITIONS BUT11F BUT11AF BUT11F BUT11AF Open emitter Open base Open collector VALUE 850 1000 400 450 UNIT V V 9 V IC Collector current 5 A ICM Collector current-peak 10 A IB Base current 2 A IBM Base current-peak 4 A Ptot Total power dissipation 40 W TC=25 Tj Junction temperature 150 Tstg Storage temperature -65~150 THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance from junction to case VALUE UNIT 3.125 K/W SavantIC Semiconductor Product Specification BUT11F BUT11AF Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL VCEO(SUS) VCEsat VBEsat ICES PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current CONDITIONS BUT11F MIN TYP. MAX 400 IC=0.1A; IB=0 V 450 BUT11AF BUT11F UNIT IC=3A; IB=0.6A BUT11AF IC=2.5A; IB=0.5A BUT11F IC=3A; IB=0.6A BUT11AF IC=2.5A; IB=0.5A BUT11F VCE=850V ;VBE=0 BUT11AF VCE=1000V ;VBE=0 1.5 V 1.3 V 1.0 mA 10 mA IEBO Emitter cut-off current VEB=9V; IC=0 hFE-1 DC current gain IC=5mA ; VCE=5V 10 35 hFE-2 DC current gain IC=0.5A ; VCE=5V 10 35 Switching times resistive load ton Turn-on time ts Storage time tf Fall time IC=2.5A; IB1=- IB2=0.5A VCC=250V;RL=100B 2 1.0 µs 4.0 µs 0.8 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BUT11F BUT11AF PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3