SavantIC Semiconductor Product Specification BUX12 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High current capability ·Fast switching speed ·High reliability APPLICATIONS ·Motor control ·Power switching circuits PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 300 V VCEO Collector-emitter voltage Open base 250 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 20 A ICM Collector current-peak 25 A IB Base current 4 A PT Total power dissipation 150 W Tj Junction temperature 200 Tstg Storage temperature -65~200 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX UNIT 1.17 /W SavantIC Semiconductor Product Specification BUX12 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=0.2mA; IB=0 250 V V(BR)EBO Emitter-base breakdown voltage IE=50mA; IC=0 7 V VCEsat-1 Collector-emitter saturation voltage IC=5 A;IB=0.5A 0.22 1 V VCEsat-2 Collector-emitter saturation voltage IC=10 A;IB=1.25 A 0.5 1.5 V Base-emitter saturation voltage IC=10 A;IB=1.25 A 1.23 1.5 V ICEX Collector cut-off current VCE=300V;VBE=-1.5V TC=125 1.5 6.0 mA ICEO Collector cut-off current VCE=200V;IB=0 1.5 mA IEBO Emitter cut-off current VEB=5V; IC=0 1.0 mA hFE-1 DC current gain IC=5A ; VCE=4V 20 hFE-2 DC current gain IC=10A ; VCE=4V 10 Transition frequency IC=1A ; VCE=15V; f=10MHz 8.0 VBEsat fT CONDITIONS MIN TYP. MAX UNIT 60 MHz Switching times ton Turn-on time ts Storage time tf Fall time IC=10A ;IB1=1.25A VCC=150V IC=10A ;IB1=-IB2=1.25A VCC=150V 2 0.28 1 µs 1.45 2 µs 0.23 0.5 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 BUX12