SECOS 2N7002KW

2N7002KW
115mA , 60V, RDS(ON) 4 
N-Ch Small Signal MOSFET with ESD Protection
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
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
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SOT-323
RDS(ON), VGS@10V, IDS@500mA=3
RDS(ON), [email protected], IDS@200mA=4
Advanced Trench Process Technology
High Density Cell Design For Ultra Low On-Resistance
Very Low Leakage Current In Off Condition
Specially Designed for Battery Operated Systems,
Solid-State Relays Drivers：Relays, Displays, Lamps,
Solenoids, Memories, etc.
ESD Protected 2KV HBM
In compliance with EU RoHS 2002/95/EC directives
A
L
3
3
C B
Top View
1
1
K
2
E
2
D
F
G
H
J
MECHANICAL DATA


Case: SOT-323 Package
Terminals: Solderable per MIL-STD-750,
Method 2026
REF.
A
B
C
D
E
F
MARKING
Millimeter
Min.
Max.
1.80
2.20
1.80
2.45
1.15
1.35
0.80
1.10
1.20
1.40
0.20
0.40
K72
REF.
G
H
J
K
L
Millimeter
Min.
Max.
0.100 REF.
0.525 REF.
0.08
0.25
0.650 TYP.
Drain

PACKAGE INFORMATION
Package
MPQ
LeaderSize
SOT-323
3K
7’ inch

Gate

Source
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Unit
Drain-Source Voltage
VDS
60
V
Gate-Source Voltage
VGS
±20
V
ID
115
mA
800
mA
Continuous Drain Current
Pulsed Drain Current
1
Maximum Power Dissipation
IDM
TA=25°C
TA=75°C
Thermal Resistance Junction-Ambient (PCB mounted) 2
Operating Junction and Storage Temperature
PD
200
120
mW
RJA
625
°C / W
TJ, TSTG
-55~150
°C
Notes:
1. Maximum DC current limited by the package.
2. Surface mounted on FR4 board, t < 5sec.
http://www.SeCoSGmbH.com/
31-Mar-2011 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 4
2N7002KW
115mA , 60V, RDS(ON) 4 
N-Ch Small Signal MOSFET with ESD Protection
Elektronische Bauelemente
N-CHANNEL ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.2
Max.
Unit
Test Conditions
Static
Drain-Source Breakdown Voltage
BVDSS
60
-
-
Gate-Threshold Voltage
VGS(th)
1
-
2.5
Drain-Source On-Resistance
RDS(ON)
-
-
4
-
-
3
V
Ω
VGS=0, ID=10μA
VDS= VGS, ID=250μA
VGS=4.5V, ID=200mA
VGS=10V, ID=500mA
Zero Gate Voltage Drain Current
IDSS
-
-
1
μA
VDS=60V, VGS=0
Gate-Body Leakage Current
IGSS
-
-
±10
μA
VDS=0, VGS= ±20V
Forward Transconductance
gfs
100
-
-
mS
VDS=15V, ID=250mA
nC
VDS=15V, VGS=4.5V, ID=200mA
nS
VDD=30V, RL=150Ω,
ID=200mA, VGEN=10V,
RG=10Ω　pF
VDS=25V, VGS=0V, f=1MHz
IS=200mA, VGS=0V
Dynamic
Total Gate Charge
Qg
-
-
0.8
Turn-On Time
t(on)
-
-
20
Turn-Off Time
t(off
-
-
40
Input Capacitance
Ciss
-
-
35
Output Capacitance
Coss
-
-
10
Reverse Transfer Capacitance
Crss
-
-
5
Source-Drain Diode
Diode Forward Voltage
VSD
-
0.82
1.3
V
Continuous Diode Forward Current
IS
-
-
115
mA
Pulse Diode Forward Current
ISM
-
-
800
mA
http://www.SeCoSGmbH.com/
31-Mar-2011 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 4
2N7002KW
Elektronische Bauelemente
115mA , 60V, RDS(ON) 4 
N-Ch Small Signal MOSFET with ESD Protection
CHARACTERISTIC CURVE
FIG.1‐Ouput Characteristic FIG.3‐On Resistance vs Drain Current FIG.2‐Transfer Characteristic
FIG.4‐ On Resistance vs Gate to Source Voltage
FIG.5‐On Resistance vs Junction Temperature
http://www.SeCoSGmbH.com/
31-Mar-2011 Rev. A
Any changes of specification will not be informed individually.
Page 3 of 4
2N7002KW
Elektronische Bauelemente
115mA , 60V, RDS(ON) 4 
N-Ch Small Signal MOSFET with ESD Protection
CHARACTERISTIC CURVE
FIG.6‐Gate Charge Waveform FIG.8‐Threshold Voltage vs Temperature
FIG.7‐Gate Charge FIG.9‐Breakdown Voltage vs Junction Temperature
FIG.10‐Source‐Drain Diode Forward Voltage
http://www.SeCoSGmbH.com/
31-Mar-2011 Rev. A
Any changes of specification will not be informed individually.
Page 4 of 4