SMG2329S

SMG2329S
-1.2A , -100V , RDS(ON) 650 mΩ
Ω
P-Channel Enhancement Mode MOSFET
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
SC-59
DESCRIPTION
The SMG2329S provide the designer with best combination
of fast switching, low on-resistance and cost-effectiveness.
The SMG5409 is universally preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
A
L
3
3
1
1
2
K
E
2
D
FEATURES
C B
Top View
G
H
Millimeter
Min.
Max.
2.70
3.10
2.25
3.00
1.30
1.70
1.00
1.40
1.70
2.30
0.35
0.50
REF.
F
Simple Drive Requirement
Small Package Outline
REF.
A
B
C
D
E
F
MARKING
2329S
PACKAGE INFORMATION
Package
MPQ
SC-59
3K
G
H
J
K
L
J
Millimeter
Min.
Max.
0.10 REF.
0.40 REF.
0.10
0.20
0.45
0.55
0.85
1.15
TOP VIEW
Leader Size
1
7 inch
3
2
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Ratings
Unit
Drain-Source Voltage
VDS
-100
V
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current, VGS=10V
1
TA=25°C
-1.2
ID
TA=70°C
Pulsed Drain Current
Power Dissipation
2
3
TA=25°C
Operating Junction and Storage Temperature Range
A
-1
IDM
-5
A
PD
1
W
TJ, TSTG
-55~150
°C
RθJA
125
°C / W
RθJC
80
°C / W
Thermal Resistance Rating
Maximum Junction to Ambient
Maximum Junction to Case
http://www.SeCoSGmbH.com/
15-Jul-2013 Rev. A
1
3
Any changes of specification will not be informed individually.
Page 1 of 4
SMG2329S
-1.2A , -100V , RDS(ON) 650 mΩ
Ω
P-Channel Enhancement Mode MOSFET
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Symbol
Parameter
Min.
Typ.
Max.
Unit
Teat Conditions
Static
Drain-Source Breakdown Voltage
BVDSS
-100
-
-
V
VGS=0, ID= -250uA
Gate-Threshold Voltage
VGS(th)
-1
-
-2.5
V
VDS=VGS, ID= -250uA
Gate-Body Leakage Current
IGSS
-
-
±100
nA
VGS=±20V
Drain-Source Leakage Current
IDSS
-
-
-10
-
-
-100
-
-
650
-
-
700
-
3
-
Drain-Source On-Resistance
2
Forward Transconductance
RDS(ON)
gfs
µA
VDS= -80V, VGS=0, TJ=25°C
VDS= -80V, VGS=0, TJ=55°C
mΩ
VGS= -10V, ID= -1A
VGS= -4.5V, ID= -0.5A
S
VDS= -5V, ID= -1A
Dynamic
Total Gate Charge
Qg
-
9.3
-
Gate-Source Charge
Qgs
-
1.75
-
Gate-Drain (“Miller”) Change
Qgd
-
1.25
-
Td(on)
-
2
-
Tr
-
18.4
-
Td(off)
-
19.6
-
Tf
-
19.6
-
Ciss
-
513
-
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Coss
-
29
-
Reverse Transfer Capacitance
Crss
-
17
-
nC
VDS= -50V,
VGS= -10V,
ID= -1A
nS
VDS= -50V,
VGS= -10V,
RG=3.3Ω,
ID= -0.5A
pF
VGS=0,
VDS= -15V,
f=1.0MHz
IS= -1A, VGS=0
Source-Drain Diode
Diode Forward Voltage
2
VSD
-
-
-1.2
V
IS
-
-
-1.2
A
ISM
-
-
-5
A
Reverse Recovery Time
TRR
-
27
-
ns
Reverse Recovery Charge
QRR
-
36
-
nC
Continuous Source Current
Pulsed Source Current
2,4
1,4
VG=VD=0V , Force Current
IS= -1A, dI/dt=100A/µs, TJ=25°C
Notes:
1. surface mounted on a 1 inch2 FR-4 board with 2OZ copper. , 270℃/W when mounted on Min. copper pad.
2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3. The power dissipation is limited by 150℃ junction temperature
4. The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
http://www.SeCoSGmbH.com/
15-Jul-2013 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 4
SMG2329S
Elektronische Bauelemente
-1.2A , -100V , RDS(ON) 650 mΩ
Ω
P-Channel Enhancement Mode MOSFET
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
15-Jul-2013 Rev. A
Any changes of specification will not be informed individually.
Page 3 of 4
SMG2329S
Elektronische Bauelemente
-1.2A , -100V , RDS(ON) 650 mΩ
Ω
P-Channel Enhancement Mode MOSFET
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
15-Jul-2013 Rev. A
Any changes of specification will not be informed individually.
Page 4 of 4