SST8205S

SST8205S
6.0A , 20V , RDS(ON) 28 m
N-Ch Enhancement Mode Power MOSFET
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
SOT-26
The SST8205S provide the designer with best combination
of fast switching, low on-resistance and cost-effectiveness.
The SOT-26 package is universally used for all commercialindustrial surface mount applications.
A
E
B
FEATURES



L
Low on-resistance
Capable of 2.5V gate drive
Low drive current
F
C
J
K
DG
H
MARKING
REF.
A
B
C
D
E
F
Date Code
Millimeter
Min.
Max.
2.70
3.10
2.60
3.00
1.40
1.80
1.30 MAX.
1.90 REF.
0.30
0.50
REF.
G
H
J
K
L
Millimeter
Min.
Max.
0
0.10
0.60 REF.
0.12 REF.
0°
10°
0.95 REF.
PACKAGE INFORMATION
Package
MPQ
Leader Size
SOT-26
3K
7 inch
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Ratings
Unit
Drain-Source Voltage
VDS
20
V
Gate-Source Voltage
VGS
±10
V
Continuous Drain Current 3, [email protected]
TA=25°C
TA=70°C
Pulsed Drain Current 1
Power Dissipation
TA=25°C
ID
4.8
A
IDM
20
A
PD
1.14
W
0.01
W / °C
-55~150
°C
110
°C / W
Linear Derating Factor
Operating Junction and Storage Temperature Range
6
Tj, Tstg
Thermal Resistance Rating
Maximum Junction to Ambient
http://www.SeCoSGmbH.com/
07-Aug-2014 Rev. B
3
Max.
RJA
Any changes of specification will not be informed individually.
Page 1 of 4
SST8205S
6.0A , 20V , RDS(ON) 28 m
N-Ch Enhancement Mode Power MOSFET
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (Tj=25°C unless otherwise specified)
Symbol
Parameter
Min.
Typ.
Max.
Unit
Teat Conditions
Static
Drain-Source Breakdown Voltage
BVDSS
20
-
-
V
Breakdown Voltage Temperature
Coefficient
△BVDS /△Tj
-
0.03
-
V/°C
VGS(th)
0.5
-
1.5
V
VDS=VGS, ID=250uA
IGSS
-
-
±100
nA
VGS=±10V
-
-
1
-
-
25
-
-
28
-
-
38
-
20
-
Gate-Threshold Voltage
Gate-Body Leakage Current
TJ=25°C
Drain-Source Leakage
Current
TJ=70°C
Drain-Source On-Resistance 2
Forward Transconductance
IDSS
RDS(ON)
gfs
VGS=0, ID=250uA
uA
mΩ
S
Reference to 25°C, ID=1mA
VDS=16V, VGS=0
VDS=16V, VGS=0
VGS=4.5V, ID=6A
VGS=2.5V, ID=5.2A
VDS=10V, ID=6A
Dynamic
2
Total Gate Charge
Qg
-
23
-
Gate-Source Charge
Qgs
-
4.5
-
Gate-Drain (“Miller”) Charge
Qgd
-
7
-
Td(on)
-
30
-
Tr
-
70
-
Td(off)
-
40
-
Tf
-
65
-
Input Capacitance
Ciss
-
1035
-
Output Capacitance
Coss
-
320
-
Reverse Transfer Capacitance
Crss
-
150
-
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
nC
VDS=20V,
VGS=5V,
ID=6A
nS
VDS=10V,
VGS=5V,
RG=6Ω,
RD=10Ω,
ID=1A
pF
VGS=0V
VDS= 20V,
f=1.0MHz
V
IS=1.7A, VGS=0V
Source-Drain Diode
Diode Forward Voltage
2
VSD
-
-
1.2
Notes:
1. Pulse width limited by Max. junction temperature.
2. Pulse width≦300us, duty cycle ≦2%
2
3. Surface mounted on 1 in copper pad of FR4 board, t≦5sec; 180°C/W when mounted on Min. copper pad.
http://www.SeCoSGmbH.com/
07-Aug-2014 Rev. B
Any changes of specification will not be informed individually.
Page 2 of 4
SST8205S
Elektronische Bauelemente
6.0A , 20V , RDS(ON) 28 m
N-Ch Enhancement Mode Power MOSFET
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
07-Aug-2014 Rev. B
Any changes of specification will not be informed individually.
Page 3 of 4
SST8205S
Elektronische Bauelemente
6.0A , 20V , RDS(ON) 28 m
N-Ch Enhancement Mode Power MOSFET
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
07-Aug-2014 Rev. B
Any changes of specification will not be informed individually.
Page 4 of 4