SECOS 2SC3356F

2SC3356F
NPN Silicon
Plastic Encapsulated Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOT-323
FEATURES
A
Low noise amplifier at VHF,
UHF and CATV band.
Low Noise and High Gain
High Power Gain
L
3
3
Collector
C B
Top View
3
1
1
K
2
2
E
2
Emitter
D
1
MARKING
R‡
F
Base
G
REF.
‡ = hFE Coding
A
B
C
D
E
F
Millimeter
Min.
Max.
1.80
2.20
1.80
2.45
1.15
1.35
0.80
1.10
1.20
1.40
0.20
0.40
H
REF.
G
H
J
K
L
J
Millimeter
Min.
Max.
0.100 REF.
0.525 REF.
0.08
0.25
0.650 TYP.
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Ratings
Unit
VCBO
VCEO
VEBO
IC
PC
TJ, TSTG
20
12
3
0.1
200
150, -55~150
V
V
V
A
mW
°C
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Total Device Dissipation
Junction and Storage Temperature
ELECTRICAL CHARACTERISTICS
Parameter
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Transition Frequency
Collector Output Capacitance
(TA = 25°C unless otherwise noted)
Symbol
Min.
Typ.
Max.
Unit
BVCBO
BVCEO
ICBO
IEBO
hFE*
fT
NF
20
12
-
-
-
V
V
μA
μA
50
-
7
-
1
1
250
2
GHz
dB
Test Conditions
IC=10μA, IE=0
IC= 1mA, IB=0
VCB=10V, IE=0
VEB=1V, IC=0
VCE=10V, IC= 20mA
VCE=10V, IC= 20mA
VCE=10V, IC= 7mA, f = 1GHz
*pulse test: pulse width ≤ 350μs, Duty cycle ≤ 2%
CLASSIFICATION OF hFE
http://www.SeCoSGmbH.com/
01-June-2002 Rev. A
Rank
Q
R
S
Coding
Range
Marking
23
50 - 100
R23
24
80 - 160
R24
25
125 – 250
R25
Any changes of specification will not be informed individually.
Page 1 of 2
2SC3356F
Elektronische Bauelemente
NPN Silicon
Plastic Encapsulated Transistor
CHARACTERISTICS CURVE
http://www.SeCoSGmbH.com/
01-June-2002 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 2