2SC3930 0.03A , 30V NPN Silicon Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURE ● ● ● SOT-323 For high-frequency Amplification Complementary to 2SA1532 Optimum for RF amplification of FM/AM radios High transition frequency fT A L 3 3 C B Top View 1 1 K 2 E 2 D CLASSIFICATION OF hFE Product-Rank 2SC3930-VB 2SC3930-VC Range 70~140 110~220 F REF. A B C D E F PACKAGE INFORMATION Package MPQ LeaderSize SOT-323 3K 7’ inch H G Millimeter Min. Max. 1.80 2.20 1.80 2.45 1.15 1.35 0.80 1.10 1.20 1.40 0.20 0.40 J REF. G H J K L Millimeter Min. Max. 0.100 REF. 0.525 REF. 0.08 0.25 0.650 TYP. Collector Base Emitter ABSOLUTE MAXIMUM RATINGS ( TA = 25°C unless otherwise specified) Symbol Ratings Unit Collector to Base Voltage Parameter VCBO 30 V Collector to Emitter Voltage VCEO 20 V Emitter to Base Voltage VEBO 5 V IC 30 mA PC 150 mW TJ, TSTG 150, -55~150 ℃ Collector Current – Continuous Collector Power Dissipation Junction, Storage Temperature ELECTRICAL CHARACTERISTICS ( TA = 25°C unless otherwise specified) Symbol Min. Typ. Max. Unit Collector-base breakdown voltage Parameter V(BR)CBO 30 - - V IC=100μA, IE=0 Testing Condition Collector-emitter breakdown voltage V(BR)CEO 20 - - V IC=100μA, IB=0 Emitter-base breakdown voltage V(BR)EBO 5 - - V IE=100μA, IC=0 Collector Cut-off Current ICBO - - 0.1 A VCB=10V, IE=0 Emitter Cut-off Current IEBO - - 0.1 A VEB=5V, IC=0 DC Current Gain hFE 70 - 220 fT 150 - - MHz VCE=10V, IE=1mA, f=200MHz Cre - - 1.5 pF VCB=10V, IC=1mA, f=10.7MHz Noise Figure NF - - 4 dB VCB=10V, IC=1mA, f=5MHz Reverse transfer impedance Zrb - - 50 Ω VCB=10V, IC=1mA, f=2MHz Transition Frequency Common emitter capacitance http://www.SeCoSGmbH.com/ 08-Mar-2011 Rev. A reverse transfer VCE=10V, IC=1mA Any changes of specification will not be informed individually. Page 1 of 3 2SC3930 Elektronische Bauelemente 0.03A , 30V NPN Silicon Epitaxial Planar Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 08-Mar-2011 Rev. A Any changes of specification will not be informed individually. Page 2 of 3 2SC3930 Elektronische Bauelemente 0.03A , 30V NPN Silicon Epitaxial Planar Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 08-Mar-2011 Rev. A Any changes of specification will not be informed individually. Page 3 of 3