SECOS CZD1386

CZD1386
-5 A, -30 V
PNP Epitaxial Silicon Transistor
Elektronische Bauelemente
DESCRIPTION
The CZD1386 is designed for low frequency applications.
FEATURES
z
Low VCE(sat) = -0.55V(Typ.) (IC/IB = -4 A/ -0.1 A)
z
Excellent DC current gain characteristics
PACKAGE DIMENSIONS
REF.
A
B
C
D
E
F
S
Millimeter
Min.
Max.
6.40
6.80
5.20
5.50
6.80
7.20
2.40
3.00
2.30 Ref.
0.70
0.90
0.60
0.90
REF.
G
H
J
K
L
M
R
Millimeter
Min.
Max.
0.50
0.70
2.20
2.40
0.45
0.55
0
0.15
0.90
1.50
5.40
5.80
0.80
1.20
ABSOLUTE MAXIMUM RATINGS at Ta = 25°C
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
*Collector Current (Pulse)
Total Power Dissipation
Junction, Storage Temperature
Symbol
Ratings
Unit
VCBO
VCEO
VEBO
IC
IC
Pc
TJ, TSTG
-30
-20
-6
-5
-10
20
+150, -55 ~ +150
V
V
V
A
A
W
℃
CHARACTERISTICS at Ta = 25°C
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*hFE
fT
Cob
Min.
Typ.
Max.
Unit
Test Conditions
-30
-20
-6
82
-
120
60
-500
-500
-1
580
-
V
V
V
nA
nA
mV
IC=-50uA
IC=-1mA
IE=-50uA
VCB=-20V
VEB=-5V
IC=-4A, IB=-0.1mA
VCE=-2V, IC=-0.5mA
VCE=-6V, IE=50mA, f=30MHz
VCB=-20V, IE=0, f=1MHz
* Pulse Test: Pulse Width≦380μs, Duty Cycle≦2%
MHz
pF
CLASSIFICATION OF hFE1
Rank
Range
01-June-2002 Rev. A
P
82 - 180
Q
120 - 270
R
180 - 390
E
370 - 580
Page 1 of 2
CZD1386
Elektronische Bauelemente
-5 A, -30 V
PNP Epitaxial Silicon Transistor
CHARACTERISTIC CURVES
01-June-2002 Rev. A
Page 2 of 2