High Voltage Transistor (NPN) COMCHIP www.comchiptech.com BTC4505N3 Features High breakdown voltage. (BVceo =400V) Low saturation voltage, typically Vce(sat) =0.1V at Ic/Ib=10mA/1mA C COLLECTOR 3 SOT-23 1 BASE .119 (3.0) .110 (2.8) 2 .020 (0.5) Top View .020 (0.5) .044 (1.10) .035 (0.90) .006 (0.15) .002 (0.05) .037(0.95) .037(0.95) .006 (0.15)max. .056 (1.40) .047 (1.20) EMITTER .103 (2.6) .086 (2.2) .020 (0.5) Dimensions in inches (millimeters) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature MDS0405003A Symbol VCBO VCEO VEBO IC Pd Tj Tstg Limit Unit 400 400 6 300 0.225 150 -55~+150 V V V mA W °C °C Page 1 High Voltage Transistor (NPN) COMCHIP www.comchiptech.com Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO ICER IEBO *VCE(sat) *VBE(sat) hFE fT Cob Min. 400 400 6 52 - Typ. 0.1 20 7 Max. 10 20 10 0.5 1.5 270 - Unit V V V µA nA µA V V MHz pF Test Conditions IC=50µA, IE=0 IC=1mA, IB=0 IE=50µA, IC=0 VCB=400V, IE=0 VCE=300V, REB=4kӨ VEB=6V,IC=0 IC=10mA, IB=1mA IC=10mA, IB=1mA VCE=10V, IC=10mA VCE=10V, IC=10mA, f=10MHz VCB=10V, f=1MHz *Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2% Classification Of hFE Rank Range MDS0405003A K 52~120 P 82~180 Q 120~270 Page 2 High Voltage Transistor (NPN) COMCHIP www.comchiptech.com Characteristic Curves ˦˴̇̈̅˴̇˼̂́ʳ˩̂˿̇˴˺˸ʳ̉̆ʳ˖̂˿˿˸˶̇̂̅ʳ˖̈̅̅˸́̇ ˖̈̅̅˸́̇ʳ˚˴˼́ʳ̉̆ʳ˖̂˿˿˸˶̇̂̅ʳ˖̈̅̅˸́̇ ˄˃˃˃˃ ˦˴̇̈̅˴̇˼̂́ʳ˩̂˿̇˴˺˸ˀˀˀʻ̀˩ʼ ˖̈̅̅˸́̇ʳ˚˴˼́ˀˀˀ˛˙˘ ˄˃˃˃ ˄˃˃ ˩˖˘ʳːʳ˄˃˩ ˩˖˘ʳːʳˈ˩ ˄˃ ˩˖˘ʳːʳ˄˩ ˄˃˃˃ ˩˖˘ʻ˦˔˧ʼʳ˓ʳ˜˖ʳːʳ˅˃˜˕ ˄˃˃ ˩˖˘ʻ˦˔˧ʼʳ˓ʳ˜˖ʳːʳ˄˃˜˕ ˄˃ ˄ ˄ ˄˃ ˄˃˃ ˖̂˿˿˸˶̇̂̅ʳ˖̈̅̅˸́̇ˀˀˀ˜˖ʻ̀˔ʼ ˄ ˄˃˃˃ ˄˃ ˄˃˃ ˖̂˿˿˸˶̇̂̅ʳ˖̈̅̅˸́̇ˀˀˀ˜˖ʻ̀˔ʼ ˦˴̇̈̅˴̇˼̂́ʳ˩̂˿̇˴˺˸ʳ̉̆ʳ˖̂˿˿˸˶̇̂̅ʳ˖̈̅̅˸́̇ ˣ̂̊˸̅ʳ˗˸̅˴̇˼́˺ʳ˖̈̅̉˸ ˄˃˃˃ ˣ̂̊˸̅ʳ˗˼̆̆˼̃˴̇˼̂́ˀˀˀˣ˗ʻ̀˪ʼ ˦˴̇̈̅˴̇˼̂́ʳ˩̂˿̇˴˺˸ˀˀˀʻ̀˩ʼ ˅ˈ˃ ˩˕˘ʻ˦˔˧ʼʳ˓ʳ˜˖ʳː˄˃˜˕ ˄˃˃ ˅˃˃ ˄ˈ˃ ˄˃˃ ˈ˃ ˃ ˄ ˄˃ ˄˃˃ ˖̂˿˿˸˶̇̂̅ʳ˖̈̅̅˸́̇ˀˀˀ˜˖ʻ̀˔ʼ MDS0405003A ˄˃˃˃ ˃ ˈ˃ ˄˃˃ ˄ˈ˃ ˔̀˵˼˸́̇ʳ˧˸̀̃˸̅˴̇̈̅˸ˀˀˀ˧˔ʻкʼ M Page 3 ˅˃˃