BCP5551 NPN Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product SOT-89 Features Designed for gereral prupose application requiring high breakdown voltage. 1 2 3 1.BASE 2.COLLECTOR 3.EMITTER REF. A B C D E F Marking: 5551 XXXX (xxxx = Date Code) Min. 4.4 4.05 1.50 1.30 2.40 0.89 REF. Max. 4.6 4.25 1.70 1.50 2.60 1.20 G H I J K L M Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1.40 1.60 0.35 0.41 5 TYP. 0.70 REF. ABSOLUTE MAXIMUM RATINGS (Tamb=25 o C, unless otherwise specified) Parameter Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Operating Junction and Storage Temperature Value VCBO VCEO VEBO IC PD TJ,TSTG 180 160 6 600 1.2 -55 ~ +150 Unit V V V mA W o C ELECTRICAL CHARACTERISTICS (Tamb=25 o C) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Saturation Voltage Output Capacitance Base-Emitter Voltage DC Current Gain Transition Frequency http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Symbol BVCBO BV CEO BVEBO ICBO IEBO VCE(sat)1 VCE(sat) 2 Cob VBE(sat)1 VBE(sat)2 hFE1 hFE2 hFE3 fT Min. 180 160 6 80 80 30 100 Typ. Max. - 50 50 150 200 6 1 1 250 300 Unit V V V nA nA mV mV pF V V MHz Test Conditions IC= 100µA IC= 1mA IE= 10µA VCB= 120V VEB= 4V IC= 10mA, I B= 1mA IC = 50mA, I B = 5mA VCB= 10V, f=1MHz IC= 10mA, I B = 1mA IC= 50mA, I B = 5mA VCE= 5V, IC= 1mA VCE= 5V, IC= 10mA VCE= 5V, IC= 50mA VCE= 10V,I C= 10mA, f=100MHz Any changing of specification will not be informed individual Page 1 of 2 BCP5551 Elektronische Bauelemente NPN Epitaxial Planar Transistor Characteristics Curve http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 2 of 2