2SC5706 D NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product TO-252 6. 50Ć0. 15 FEATURES 2. 30Ć0. 10 5. 30Ć0. 10 C •Large current capacitance •Low collector-to-emitter saturation voltage •High-speed switching •High allowable power dissipation 0. 51Ć0. 05 5. 50Ć0. 10 0. 75Ć0. 10 0Ć0. 10 5 MARKING : 5706 (With Date Code) 5 MAXIMUM RATINGS* TA=25ćunless otherwise noted B C E 2. 30Ć0. 10 Ratings 1. 60Ć0. 15 0. 60Ć 0. 10 2. 30Ć0. 10 0. 6 0. 80Ć0. 10 2. 70Ć0. 20 9. 70Ć0. 20 5 0. 51Ć0. 10 1. 20 0 Ć9 0. 51 Parameter Symbol Unit Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage VCES 80 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 6 V Collector Current I CBO 5 A Collector Current (Pulse) I CP 7.5 A Base Current IB 1.2 A Junction Temperature Tj +150 °C Storage Temperature TSTG -55~+150 °C Total Power Dissipation PD PD(TC=25°C) 0.8 15 W W ELECTRICAL CHARACTERISTICS (Tamb=25 C unless otherwise specified) O Parameter Symbol Min Typ. Max Unit. Collector-Base Breakdown Voltage BVCBO 80 - - V I C=10µA, I E=0 Collector-Emitter Breakdown Voltage BVCES 80 - - V I C=100µA, RBE=0 Collector-Emitter Breakdown Voltage BVCEO 50 - - V I C=1mA, RBE=∞ Emitter-Base Breakdown Voltage BVEBO 6 - - V I E=10µA, I C=0 Collector-Base Cutoff Current I CBO - - 1 µA VCB=40V, I E=0 Emitter-Base Cutoff Current I EBO - - 1 µA VEB=4V, I C=0 Collector Saturation Voltage 1 *VCE(sat)1 - - 135 mV I C=1A, I B=50mA Collector Saturation Voltage 2 *VCE(sat)2 - - 240 mV I C=2A, I B=100mA Base Saturation Voltage *V BE(sat) - - 1.2 V I C=2A, I B=100mA DC Current Gain *hFE 200 - 560 Gain-Bandwidth Product fT - 400 - MHz Output Capacitance Cob - 15 - pF VCB=10V, f=1MHz Turn-On Time ton - 35 - ns See specified test circuit. Storage Time tstg - 300 - ns See specified test circuit. Fall Time tf - 20 - ns See specified test circuit. http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Test Conditions VCE=2V, I C=500mA VCE=10V, IC=500mA Any changing of specification will not be informed individual Page 1 of 3 2SC5706D Elektronische Bauelemente NPN Silicon General Purpose Transistor SwitchingTimeTest Circuit Characteristics Curve http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 2 of 3 2SC5706D Elektronische Bauelemente http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A NPN Silicon General Purpose Transistor Any changing of specification will not be informed individual Page 3 of 3