2SC5585F NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product FEATURES SOT-523 High Current Low VCE(sat) - VCE(sat)İ 250mV at IC = 200mA/IB=10mA A L MARKING CODE BX S 2 3 Top View B 1 D G 3. Collector 2. Base J C 1. Emitter Min Max A 1.50 1.70 B 0.78 0.82 C 0.80 0.82 D 0.28 0.32 G 0.90 1.10 H 0.00 0.10 J 0.10 0.20 K 0.35 0.41 L 0.49 0.51 S 1.50 1.70 All Dimension in mm K H Dim Maximum Ratings (Ta=25 o C unless otherwise specified) Parameter Symbol Value Unit Collector-base voltage VCBO 15 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 6 V Collector current (continuous) IC 0.5 A Collector power dissipation PC 0.15 Junction temperature Tj Storage temperature -55~+150 Tstg -55~+150 W o C o C Electrical Characteristics (Tamb=25 o C unless otherwise specified) Parameter Symbol Min. Collector-base breakdown voltage BVCBO 15 V IC=10 μA, IE=0 Collector-emitter breakdown voltage BVCEO 12 V IC=1mA, IB=0 Emitter-base breakdown voltage BVEBO 6 V IE=10 μA, IC=0 0.1 μA VCB=15V, IE=0 0.1 μA VEB= 6V, IC=0 Collector cutoff current ICBO Emitter cutoff current IEBO DC current gain hFE Collector-emitter saturation voltage Transition frequency Collector Output capacitance Typ. 270 Max. Unit 680 0.25 VCE(sat) Conditions VCE=2V, IC=10mA V fT 320 MHz Cob 7.5 pF IC=200mA, IB=10mA VCE=2V, IC=10mA, f=100MHz VCB=10V, IE=0, f=1MHz Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 2 2SC5585F Elektronische Bauelemente NPN Silicon General Purpose Transistor z(OHFWULFDOCKDUDFWHULVWLFCXUYHV http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 2 of 2