2SA2018F PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product FEATURES SOT-523 High Collector Current Low VCE(sat) - VCE(sat) İ-250mV at IC = -200mA/IB=-10mA A L MARKING CODE BW S 2 3 Top View B 1 D G 3. Collector 2. Base J C 1. Emitter Min Max A 1.50 1.70 B 0.78 0.82 C 0.80 0.82 D 0.28 0.32 G 0.90 1.10 H 0.00 0.10 J 0.10 0.20 K 0.35 0.41 L 0.49 0.51 S 1.50 1.70 All Dimension in mm K H Dim Maximum Ratings (Ta=25 o C unless otherwise specified) Parameter Symbol Limits Unit Collector-base voltage VCBO -15 V Collector-emitter voltage VCEO -12 V Emitter-base voltage VEBO -6 V Collector current (Continuous) IC -0.5 A Collector power dissipation PC 0.15 Junction temperature Tj Storage temperature -55~+150 Tstg -55~+150 W o C o C Electrical Characteristics (Tamb=25 o C unless otherwise specified) Parameter Symbol Min. Collector-base breakdown voltage BVCBO -15 V IC=-10 μ A, IE=0 Collector-emitter breakdown voltage BVCEO -12 V IC=-1mA, IB=0 Emitter-base breakdown voltage BVEBO -6 V IE=-10 μ A, IC=0 -0.1 μA VCB=-15V, IE=0 -0.1 μA VEB=-6V, IC=0 Collector cutoff current ICBO Emitter cutoff current IEBO DC current gain hFE Collector-emitter saturation voltage Transition frequency Collector Output capacitance Typ. 270 Max. Unit 680 -0.25 VCE(sat) Conditions VCE=-2V, IC=-10mA V fT 260 MHz Cob 6.5 pF IC=-200mA, IB=-10mA VCE=-2V, IC=-10mA, f=100MHz VCB=-10V, IE=0, f=1MHz Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 2 2SA2018F Elektronische Bauelemente PNP Silicon General Purpose Transistor z(OHFWULFDOCKDUDFWHULVWLFCXUYHV http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 2 of 2