2SC1815W NPN Transistor Elektronische Bauelemente Epitaxial Planar Transistor RoHS Compliant Product Description The 2SC1815W is designed for use in driver stage of AF amplifier and general purpose amplificaion. Millimeter REF. Min. 0.80 0 0.80 1.80 1.15 1.80 A A1 A2 D E HE ABSOLUTE MAXIMUM RATINGS VCEO VEBO IC PD TJ,Tstg REF. L1 L b c e Q1 Millimeter Min. Max. 0.42 REF. 0.15 0.35 0.25 0.40 0.10 0.25 0.65 REF. 0.15 BSC. Ta=25oC Symbol VCBO Max. 1.10 0.10 1.00 2.20 1.35 2.40 Parameter Value Units Collector-Base Voltage 60 V Collector-Emitter Voltage Emitter-Base Voltage 50 V V Collector Current 150 Total Power Dissipation 225 5 Junction and Storage Temperature mA mW C -55~+150 O o ELECTRICAL CHARACTERISTICS Tamb=25 C unless otherwise specified Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Symbol BVCBO BVCEO BVEBO I CBO Min 60 50 5 - Typ. - Max - Unit V V V - 100 nA - 100 nA VEB=5V I C=100mA,IB=10mA I C=100mA,IB=10mA Emitter-Base Cutoff Current I EBO - Collector Saturation Voltage *VCE(sat) - - 250 mV Base Saturation Voltage *VBE(sat) - - 1 V *hFE1 *hFE2 120 - 700 - DC Current Gain Gain-Bandwidth Product fT Output Capacitance Cob 25 80 - - Test Conditions I C= 100 µA I C= 1mA I E= 10µA VCB= 60V VCE= 6 V, I C=2mA VCE= 6 V, I C=150mA - - MH z - 3.5 pF VCE= 10 V, IC= 1mA,f=100MHz VCB=10V , f=1MHz *Pulse width≦380µs, Duty Cycle≦2% Classification of hFE Rank Range http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A C4Y C4G C4B 120~240 200~400 350~700 Any changing of specification will not be informed individual Page 1 of 2 2SC1815W Elektronische Bauelemente NPN Transistor Epitaxial Planar Transistor Characteristics Curve http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 2 of 2