PZTA94 PNP Transistor Elektronische Bauelemente Epitaxial Planar Transistor RoHS Compliant Product SOT-223 Description The PZTA94 is designed for application requires high voltage. Features o *High Current Gain: IC=300mA at 25 C *High Voltage: VCEO=400V (min) at IC=1mA *Complementary With PZTA44 REF. Date Code A9 4 B ABSOLUTE MAXIMUM RATINGS A C D E I H C Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 0 10 0.60 0.80 0.25 0.35 REF. E B J 1 2 3 4 5 Millimeter Min. Max. 13 TYP. 2.30 REF. 6.30 6.70 6.30 6.70 3.30 3.70 3.30 3.70 1.40 1.80 o Ta=25 C Symbol Value Units VCBO Collector-Base Voltage -400 V VCEO VEBO Collector-Emitter Voltage Emitter-Base Voltage -400 Collector Current -500 V V mA IC PD TJ,Tstg Parameter -6 Total Power Dissipation 2 Junction and Storage Temperature -55~+150 W C O o ELECTRICAL CHARACTERISTICS Tamb=25 C unless otherwise specified Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Symbol BVCBO BVCEO BVEBO Min -400 -400 -6 Typ. - Collector-Base Cutoff Current I CBO - Emitter-Base Cutoff Current I EBO - Collector-Base Cutoff Current I CES - - Max - Unit V V V Test Conditions I C=-100µA,IE=0 I C=-1mA,IB=0 I E=-100µA,IC=0 -100 nA VCB=-400V,IE=0 -100 nA VBE=-6 V,IC=0 -500 nA VCE=-400V,VBE=0 *VCE(sat)1 - - -350 mV I C=- 1mA,IB=-0.1mA Collector Saturation Voltage *VCE(sat)2 -750 mV mV I C=- 10mA,IB=-1 mA *VCE(sat)3 VBE(sat) - -500 Base Satruation Voltage - -750 mV *h FE1 40 *h FE2 50 - *h FE3 45 *h FE4 40 DC Current Gain - I C=- 50mA,IB=-5 mA I C=- 10mA,IB=-1 mA - 300 - VCE=-10V, I C=- 1 mA VCE=-10 V, I C=- 10 mA VCE=-10 V, I C=-50 mA - - VCE=-10 V, I C=-100mA *Pulse width≦380µs, Duty Cycle≦2% http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 1 of 2 PZTA94 Elektronische Bauelemente PNP Transistor Epitaxial Planar Transistor Characteristics Curve http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 2 of 2