PZTA27 NPN Transistor Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product SOT-223 Description The PZTA27 is designed for darlington amplifier high current gain collector current to 500mA. REF. Date Code A C D E I H A 2 7 B C E ABSOLUTE MAXIMUM RATINGS Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 0 10 0.60 0.80 0.25 0.35 REF. B J 1 2 3 4 5 Millimeter Min. Max. 13 TYP. 2.30 REF. 6.30 6.70 6.30 6.70 3.30 3.70 3.30 3.70 1.40 1.80 o Ta=25 C Symbol Value Units VCBO Collector-Base Voltage 60 V VCEO VEBO Collector-Emitter Voltage Emitter-Base Voltage 60 10 Collector Current 500 V V mA IC PD TJ,Tstg Parameter Total Power Dissipation 2 Junction and Storage Temperature -55~+150 W C O o ELECTRICAL CHARACTERISTICS Tamb=25 C unless otherwise specified Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Emitter-Base Cutoff Current Collector-Base Cutoff Current Collector Saturation Voltage Base Satruation Voltage DC Current Gain http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Symbol BVCBO BVCES BVEBO I CBO I EBO I CES Min 60 60 10 - VCE(sat) VBE(sat) - hFE1 hFE2 10K 10K Typ. - Max - Unit V V V - 100 100 500 nA nA nA I E= 10µA,IC=0 VCB=50V,IE=0 VEB=10V,IC=0 VCE=50V 1.5 V I C=100mA,IB=0.1mA 2 - V I C=100mA,VCE=5V - Test Conditions I C= 100µA,IE=0 I C= 100µA,VBE=0 VCE= 5 V, I C=10 mA VCE= 5 V, I C=100mA Any changing of specification will not be informed individual Page 1 of 2 PZTA27 Elektronische Bauelemente NPN Transistor Epitaxial Planar Transistor Characteristics Curve http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 2 of 2