PZTA14 NPN Transistor Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product SOT-223 Description The PZTA14 is darlington amplifier transistor designed for applications requiring extremely high current gain. REF. Date Code A C D E I H A 1 4 B C E ABSOLUTE MAXIMUM RATINGS Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 0 10 0.60 0.80 0.25 0.35 REF. B J 1 2 3 4 5 Millimeter Min. Max. 13 TYP. 2.30 REF. 6.30 6.70 6.30 6.70 3.30 3.70 3.30 3.70 1.40 1.80 o Ta=25 C Symbol Value Units VCBO Collector-Base Voltage 30 V VCEO VEBO Collector-Emitter Voltage Emitter-Base Voltage 30 10 Collector Current 300 V V mA IC PD TJ,Tstg Parameter Total Power Dissipation 2 Junction and Storage Temperature -55~+150 W C O o ELECTRICAL CHARACTERISTICS Tamb=25 C unless otherwise specified Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Emitter-Base Cutoff Current Collector Saturation Voltage Base Satruation Voltage DC Current Gain Gain-Bandwidth Product http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Symbol BVCBO BVCEO BVEBO I CBO I EBO Min 30 30 10 - VCE(sat) VBE(on) - hFE1 hFE2 10K 20K fT 125 Typ. - Max - Unit V V V - 100 100 nA nA VCB=30V VEB=10V 1.5 V I C=100mA,IB=0.1mA 2 - V VCE= 5 V, I C=100mA VCE= 5 V, I C=10 mA - MHz - Test Conditions I C= 100µA I C= 1mA I E= 10µA VCE= 5 V, I C=100mA VCE= 5 V, IC= 10mA,f=100MHz Any changing of specification will not be informed individual Page 1 of 2 PZTA14 Elektronische Bauelemente NPN Transistor Epitaxial Planar Transistor Characteristics Curve http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 2 of 2