PZT882 NPN Transistor Elektronische Bauelemente Epitaxial Planar Transistor RoHS Compliant Product SOT-223 Description The PZT882 is suited for the output stage of 2W audio, voltage regulator, and relay driver. REF. A C D E I H 88 2 Date Code B C E Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 0 10 0.60 0.80 0.25 0.35 Millimeter Min. Max. 13 TYP. 2.30 REF. 6.30 6.70 6.30 6.70 3.30 3.70 3.30 3.70 1.40 1.80 REF. B J 1 2 3 4 5 o Ta=25 C ABSOLUTE MAXIMUM RATINGS Symbol Value Units VCBO Collector-Base Voltage 40 V VCEO VEBO Collector-Emitter Voltage Emitter-Base Voltage 30 Collector Current 3 2 V V A IC PD TJ,Tstg Parameter 5 Total Power Dissipation Junction and Storage Temperature W C -55~+150 O o ELECTRICAL CHARACTERISTICS Tamb=25 C unless otherwise specified Parameter Collector-Base Cutoff Current Symbol BVCBO *BVCEO BVEBO I CBO Emitter-Base Cutoff Current I EBO Collector Saturation Voltage *VCE(sat) *VBE(sat) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Base Saturation Voltage DC Current Gain Gain-Bandwidth Product Output Capacitance *hFE1 *hFE2 fT Cob Typ. - Max - Unit V V V 1 1 uA uA 30 100 - - 0.5 2 500 V V 90 - 45 - MH z pF Min 40 30 5 - Test Conditions I C= 100µA, I E=0 I C= 1mA, I B=0 I E= 10µA VCB= 30V VEB=3V I C=2A,IB=0.2 A I C=2A,IB=0.2 A VCE= 2 V, I C=20mA VCE= 2 V, I C=1 A VCE= 5 V, IC= 0.1A,, f=100MHz VCB= 10 V , f=1MHz,IE=0 Classification of hFE Rank Range http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Q 100~200 P 160~320 E 250~500 Any changing of specification will not be informed individual Page 1 of 2 PZT882 Elektronische Bauelemente NPN Transistor Epitaxial Planar Transistor Characteristics Curve http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 2 of 2