PZT772 PNP Transistor Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product SOT-223 Description The PZT772 is designed for using in output stage of 2W amplifier, voltage regulator, DC-DC converter and driver. REF. A C D E I H 7 7 2 Date Code B C E Min. 6.70 2.90 0.02 0 0.60 0.25 Max. 7.30 3.10 0.10 10 0.80 0.35 REF. o MAXIMUM RATINGS* (Tamb =25 C , unless otherwise specified) Symbol Parameter Min. Max. 13 TYP. 2.30 REF. 6.30 6.70 6.30 6.70 3.30 3.70 3.30 3.70 1.40 1.80 B J 1 2 3 4 5 Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V Collector Current-Continuous -3 A Total Power Dissipation 1.5 IC PD TJ,Tstg Junction and Storage Temperature ELECTRICAL CHARACTERISTICS W C -55~-150 Tamb=25ć unlessotherwise O specified Symbol MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO -40 _ _ V Ic=-100u A Collector-emitter breakdown voltage V(BR)CEO -30 _ _ V IC= -10 mA Emitter-base breakdown voltage V(BR)EBO -5 _ _ V IE= -10u A Collector cut-off current ICBO _ _ -1 uA VCB= -30 V Emitter cut-off current IEBO _ _ 1 uA VEB=-3V _ _ _ Parameter DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Test conditions hFE 1 30 hFE 2 100 160 500 _ VCE=-2V, IC= -1mA _ -0.3 -0.5 V I C=-2A, _ -1 -2 V 80 _ MHz I C=-2A, IB= -0.2A VCE=-20V,IC=-20mA , f = 100MHz 55 _ pF VCE(sat) VBE(sat) Transition frequency fT _ Collector output capacitance Cob _ VCE= -2V, IC= -20mA IB= -0.2A VCB=-10V, f=1MHz CLASSIFICATION OF hFE2 Rank Q P E Range 100-200 160-320 250-500 http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 1 of 2 PZT772 Elektronische Bauelemente PNP Transistor Epitaxial Planar Transistor RATING AND CHARACTERISTIC CURVES http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 2 of 2