PZTA44 300mA, 400V Elektronische Bauelemente NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR SOT-223 C f ICM : 300 mA (Max.) . High Voltage 0D[ VCEO : 400 V B f 5 5 f E C . RoHS Compliant Product . Low Current f FEATURES BASE 2. COLLECTOR 3. EMITTER 1 fe e fe e f 1. 2 3 fe e MAXIMUM RATINGS ( TA = 25к unless otherwise noted ) TYPE NUMBER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 500 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 6 V Collector Current-Continuous IC 300 mA Transition Frequency PC 1000 mW TJ, TSTG -55 ~ +150 к Junction and Storage Temperature ƔELECTRICAL CHARACTERISTICS ( Tamb = 25к unless otherwise specified ) TYPE NUMBER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Collector-Base Breakdown Voltage V(BR)CBO IC = 100 μA, IE = 0 500 V Collector-Emitter Breakdown Voltage V(BR)CEO IC = 1 mA, IB = 0 400 V Emitter-Base Breakdown Voltage V(BR)EBO IE = 100 μA, IC = 0 6 V Collector Cut-Off Current ICBO VCB = 400 V, IE = 0 0.1 μA Emitter Cut-Off Current IEBO VEB = 4 V, IC = 0 0.1 μA hFE(1) VCE = 10 V, IC = 1 mA 40 hFE(2) VCE = 10 V, IC = 10 mA 50 hFE(3) VCE = 10 V, IC = 50 mA 45 hFE(4) VCE = 10 V, IC = 100 mA 40 300 DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage VCE(SAT) IC = 1 mA, IB = 0.1 mA 0.4 V VCE(SAT) IC = 10 mA, IB = 1 mA 0.5 V VCE(SAT) IC = 50 mA, IB = 5 mA 0.75 V VBE(SAT) IC = 10 mA, IB = 1 mA 0.85 V Transition Frequency fT VCE = 10 V, IC = 10 mA, f = 100 MHZ Collector Capacitance Cc VCB = 20 V, IE = 0, f = 1MHZ 7 pF Emitter Capacitance Ce VEB = 0.5 V, IC = 0, f = 1MHZ 180 pF http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A 20 MHZ Any changing of specification will not be informed individual Page 1 of 1 PZTA44 Elektronische Bauelemente 300mA, 400V NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR Characteristics Curve http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 1 of 1