SECOS MPSA13

MPSA13 / 14
NPN Epitaxial Silicon Transistor
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
TO-92
FEATURES
Darlington TRANSISTOR
1
Power dissipation
2
0.625
PCM:
3
W (Tamb=25℃)
1 2 3
Collector current
ICM:
0.5
A
Collector-base voltage
V(BR)CBO:
30
V
Operating and storage junction temperature range
1. EMITTER
2. BASE
3 . COLLECTOR
TJ, Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
unless otherwise specified)
Symbol
Test
conditions
MIN
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
Ic= 100µA, IE=0
30
V
Collector-emitter breakdown voltage
V(BR)CEO
IC= 1mA , IB=0
30
V
Emitter-base breakdown voltage
V(BR)EBO
IE= 100µA, IC=0
10
V
Collector cut-off current
ICBO
VCB= 30V, IE=0
0.1
µA
Emitter cut-off current
IEBO
VEB= 10V, IC=0
0.1
µA
HFE(1) *
DC current gain
HFE(2) *
VCE=5V, IC=10mA
VCE=5V, IC=100mA
MPSA13
5000
MPSA14
10000
MPSA13
10000
MPSA14
20000
Collector-emitter saturation voltage
VCE(sat) *
IC= 100mA, IB=0.1 mA
1.5
V
Base-emitter
VBE(on) *
VCE=5V, IC= 100mA
2.0
V
fT
VCE=5V, IC= 10mA , f=100MHz
voltage
Transition frequency
* Pulse Test: pulse width
125
MHz
300µs, duty cycle 2%.
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 3
MPSA13 / 14
NPN Epitaxial Silicon Transistor
Elektronische Bauelemente
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
Typical Characteristics
1M
hFE, DC CURRENT GAIN
VCE = 5V
100k
10k
1k
1
10
100
1000
10
IC = 1000 IB
V BE(sat)
1
V CE(sat)
0.1
10
IC [mA], COLLECTOR CURRENT
IC[mA], COLLECTOR CURRENT
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
VCE = 5V
IC[mA], COLLECTOR CURRENT
100
10
0.4
0.8
1.2
1.6
2.0
2.4
VBE [V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter On Voltage
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
Figure 1. DC current Gain
1
0.0
100
1000
VCE = 5V
100
10
1
10
100
IC[mA], COLLECTOR CURRENT
Figure 4. Current Gain Bandwidth Product
Any changing of specification will not be informed individual
Page 2 of 3
MPSA13 / 14
NPN Epitaxial Silicon Transistor
Elektronische Bauelemente
TO-92 PACKAGE OUTLINE DIMENSIONS
D1
E
C
A
A1
D
b
L
φ
e
e1
Dimensions In Millimeters
Symbol
Min
Max
Min
Max
A
3.300
3.700
0.130
0.146
A1
1.100
1.400
0.043
0.055
b
0.380
0.550
0.015
0.022
c
0.360
0.510
0.014
0.020
D
4.400
4.700
0.173
0.185
D1
3.430
E
4.300
4.700
0.169
0.185
0.050TYP
e1
2.440
2.640
0.096
0.104
L
14.100
14.500
0.555
0.571
1.600
Ö
0.000
01-Jun-2002 Rev. A
0.135
1.270TYP
e
http://www.SeCoSGmbH.com
Dimensions In Inches
0.380
0.063
0.000
0.015
Any changing of specification will not be informed individual
Page 3 of 3