MPSA13 / 14 NPN Epitaxial Silicon Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 FEATURES Darlington TRANSISTOR 1 Power dissipation 2 0.625 PCM: 3 W (Tamb=25℃) 1 2 3 Collector current ICM: 0.5 A Collector-base voltage V(BR)CBO: 30 V Operating and storage junction temperature range 1. EMITTER 2. BASE 3 . COLLECTOR TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter unless otherwise specified) Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 100µA, IE=0 30 V Collector-emitter breakdown voltage V(BR)CEO IC= 1mA , IB=0 30 V Emitter-base breakdown voltage V(BR)EBO IE= 100µA, IC=0 10 V Collector cut-off current ICBO VCB= 30V, IE=0 0.1 µA Emitter cut-off current IEBO VEB= 10V, IC=0 0.1 µA HFE(1) * DC current gain HFE(2) * VCE=5V, IC=10mA VCE=5V, IC=100mA MPSA13 5000 MPSA14 10000 MPSA13 10000 MPSA14 20000 Collector-emitter saturation voltage VCE(sat) * IC= 100mA, IB=0.1 mA 1.5 V Base-emitter VBE(on) * VCE=5V, IC= 100mA 2.0 V fT VCE=5V, IC= 10mA , f=100MHz voltage Transition frequency * Pulse Test: pulse width 125 MHz 300µs, duty cycle 2%. Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 3 MPSA13 / 14 NPN Epitaxial Silicon Transistor Elektronische Bauelemente VBE(sat), VCE(sat)[V], SATURATION VOLTAGE Typical Characteristics 1M hFE, DC CURRENT GAIN VCE = 5V 100k 10k 1k 1 10 100 1000 10 IC = 1000 IB V BE(sat) 1 V CE(sat) 0.1 10 IC [mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage VCE = 5V IC[mA], COLLECTOR CURRENT 100 10 0.4 0.8 1.2 1.6 2.0 2.4 VBE [V], BASE-EMITTER VOLTAGE Figure 3. Base-Emitter On Voltage http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT Figure 1. DC current Gain 1 0.0 100 1000 VCE = 5V 100 10 1 10 100 IC[mA], COLLECTOR CURRENT Figure 4. Current Gain Bandwidth Product Any changing of specification will not be informed individual Page 2 of 3 MPSA13 / 14 NPN Epitaxial Silicon Transistor Elektronische Bauelemente TO-92 PACKAGE OUTLINE DIMENSIONS D1 E C A A1 D b L φ e e1 Dimensions In Millimeters Symbol Min Max Min Max A 3.300 3.700 0.130 0.146 A1 1.100 1.400 0.043 0.055 b 0.380 0.550 0.015 0.022 c 0.360 0.510 0.014 0.020 D 4.400 4.700 0.173 0.185 D1 3.430 E 4.300 4.700 0.169 0.185 0.050TYP e1 2.440 2.640 0.096 0.104 L 14.100 14.500 0.555 0.571 1.600 Ö 0.000 01-Jun-2002 Rev. A 0.135 1.270TYP e http://www.SeCoSGmbH.com Dimensions In Inches 0.380 0.063 0.000 0.015 Any changing of specification will not be informed individual Page 3 of 3