SECOS S9012T

S9012T
PNP Epitaxial Silicon Transistor
RoHS Compliant Product
TO-92
A suffix of "-C" specifies halogen & lead-free
4.55±0.2
4.5±0.2
FEATURE
3.5 ±0.2
14.3 ±0.2
Power dissipation
PCM : 0.625 W Tamb=25
Collector current
ICM:
-0.5
A
V(BR)CBO : -40
0.43 +0.08
–0.07
0.46 +0.1
–0.1
Collector-base voltage
V
(1.27 Typ.)
Operating and storage junction temperature range
Tj, Tstg:
-55
+0.2
1.25–0.2
1 2 3
to +150
1: Emitter
2: Base
3: Collector
2.54 ±0.1
ELECTRICAL CHARACTERISTICS˄Tamb=25ć
Symbol
Parameter
unless
Test
otherwise
specified˅
conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
Ic= -100­A ˈ IE=0
-40
V
Collector-emitter breakdown voltage
V(BR)CEO
IC= -1 mA ,
-25
V
Emitter-base breakdown voltage
V(BR)EBO
IE= -100­Aˈ IC=0
-5
V
IB=0
Collector cut-off current
ICBO
VCB=- 40V ,
IE=0
-0.1
­A
Collector cut-off current
ICBO
VCB=-20V ,
IE=0
-0.1
­A
Emitter cut-off current
IEBO
VEB=- 5V, IC=0
-0.1
­A
hFE(1)
VCE=-1V, IC=-50mA
64
hFE(2)
VCE=-1V, IC= -500mA
40
300
DC current gain
Collector-emitter saturation voltage
VCE(sat)
IC= -500 mA, IB= -50mA
-0.6
V
Base-emitter voltage
VBE(sat)
IC= -500 mA, IB=- 50mA
-1.2
V
Transition frequency
fT
VCE=-6V,IC=-20mA,
150
f=30MHz
MHz
CLASSIFICATION OF hFE(1)
Rank
D
E
F
G
H
I
Range
64-91
78-112
96-135
112-166
144-202
190-300
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 2
S9012T
PNP Epitaxial Silicon Transistor
Elektronische Bauelemente
Typical Characteristics
-50
1000
IB=-300μA
VCE = -1V
-40
hFE, DC CURRENT GAIN
IC[mA], COLLECTOR CURRENT
IB=-250μA
IB=-200μA
-30
IB=-150μA
IB=-100μA
-20
IB=-50μA
-10
10
-10
-0
-0
-10
-20
-30
-40
100
-50
Figure 2. DC current Gain
-1000
VBE(sat)
-100
VCE(sat)
IC=10IB
-1000
IC[mA], COLLECTOR CURRENT
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
Figure 1. Static Characteristic
-100
-1000
IC[mA], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
-10
-10
-100
1000
VCE=-6V
100
10
1
-1
-10
-100
-1000
-10000
IC[mA], COLLECTOR CURRENT
Figure 4. Current Gain Bandwidth Product
Any changing of specification will not be informed individual
Page 2 of 2