SCG3019 N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-523 FEATURES Low on-resistance. Fast switching speed. Low voltage drive makes this device ideal for portable equipment. Easily designed drive circuits. Easy to parallel. EQUIVALENT CIRCUIT REF. A B C D G J Millimeter Min. Max. 1.50 1.70 0.75 0.95 0.60 0.80 0.23 0.33 0.50BSC 0.10 0.20 REF. K M N S Millimeter Min. Max. 0.30 0.50 o --10 o --10 1.50 1.70 MAXIMUM RATINGS (TA=25℃ unless otherwise specified) PARAMETER SYMBOL RATING UNIT Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current ID 0.1 A Total Power Dissipation PD 0.15 W Operating Junction Temperature Range TJ 150 °C Operating Storage Temperature Range TSTG -55~150 °C Thermal Resistance, Junction to Ambient RθJA 833 °C / W DEVICE MARKING KN http://www.SeCoSGmbH.com/ 04-May-2010 Rev. A Any changes of specification will not be informed individually. Page 1 of 4 SCG3019 N-Channel Enhancement MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) CHARACTERISTICS SYMBOL MIN TYP MAX UNIT TEST CONDITIONS Off Characteristics Drain-Source Breakdown Voltage BVDSS 30 - - V VGS = 0V, ID = 10μA Zero Gate Voltage Drain Current IDSS - - 1 μA VDS = 30V, VGS = 0V Gate-Source Leakage IGSS - - ±1 μA VGS= ±20V, VDS=0V Gate Threshold Voltage VGS(th) 0.8 - 1.5 V VDS= 3V, ID=100μA Static Drain-Source On Resistance RDS(ON) - - 8 - - 13 20 - - Forward transfer admittance gfs Ω VGS= 4V, ID = 10mA VGS= 2.5V, ID = 1mA mS VDS= 3V, ID = 10mA pF VDS= 5V, VGS= 0V, f= 1MHz Dynamic Characteristics Input Capacitance Ciss - 13 - Output Capacitance Coss - 9 - Reverse Transfer Capacitance Crss - 4 - Switching Characteristics Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time http://www.SeCoSGmbH.com/ 04-May-2010 Rev. A Td(ON) - 15 - Tr - 35 - Td(OFF) - 80 - Tf - 80 - nS VGS= 5V, VDD= 5V, ID= 10mA, RG= 10Ω, RL= 500Ω Any changes of specification will not be informed individually. Page 2 of 4 SCG3019 Elektronische Bauelemente N-Channel Enhancement MOSFET CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ 04-May-2010 Rev. A Any changes of specification will not be informed individually. Page 3 of 4 SCG3019 Elektronische Bauelemente N-Channel Enhancement MOSFET CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ 04-May-2010 Rev. A Any changes of specification will not be informed individually. Page 4 of 4