SECOS SCG3019

SCG3019
N-Channel Enhancement MOSFET
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOT-523
FEATURES
Low on-resistance.
Fast switching speed.
Low voltage drive makes this device ideal for portable equipment.
Easily designed drive circuits.
Easy to parallel.




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EQUIVALENT CIRCUIT
REF.
A
B
C
D
G
J
Millimeter
Min.
Max.
1.50
1.70
0.75
0.95
0.60
0.80
0.23
0.33
0.50BSC
0.10
0.20
REF.
K
M
N
S
Millimeter
Min.
Max.
0.30
0.50
o
--10
o
--10
1.50
1.70
MAXIMUM RATINGS (TA=25℃ unless otherwise specified)
PARAMETER
SYMBOL
RATING
UNIT
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current
ID
0.1
A
Total Power Dissipation
PD
0.15
W
Operating Junction Temperature Range
TJ
150
°C
Operating Storage Temperature Range
TSTG
-55~150
°C
Thermal Resistance, Junction to Ambient
RθJA
833
°C / W
DEVICE MARKING
KN
http://www.SeCoSGmbH.com/
04-May-2010 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 4
SCG3019
N-Channel Enhancement MOSFET
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
CHARACTERISTICS
SYMBOL
MIN
TYP
MAX
UNIT
TEST CONDITIONS
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
30
-
-
V
VGS = 0V, ID = 10μA
Zero Gate Voltage Drain Current
IDSS
-
-
1
μA
VDS = 30V, VGS = 0V
Gate-Source Leakage
IGSS
-
-
±1
μA
VGS= ±20V, VDS=0V
Gate Threshold Voltage
VGS(th)
0.8
-
1.5
V
VDS= 3V, ID=100μA
Static Drain-Source On Resistance
RDS(ON)
-
-
8
-
-
13
20
-
-
Forward transfer admittance
gfs
Ω
VGS= 4V, ID = 10mA
VGS= 2.5V, ID = 1mA
mS
VDS= 3V, ID = 10mA
pF
VDS= 5V, VGS= 0V, f= 1MHz
Dynamic Characteristics
Input Capacitance
Ciss
-
13
-
Output Capacitance
Coss
-
9
-
Reverse Transfer Capacitance
Crss
-
4
-
Switching Characteristics
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
http://www.SeCoSGmbH.com/
04-May-2010 Rev. A
Td(ON)
-
15
-
Tr
-
35
-
Td(OFF)
-
80
-
Tf
-
80
-
nS
VGS= 5V, VDD= 5V, ID= 10mA,
RG= 10Ω, RL= 500Ω
Any changes of specification will not be informed individually.
Page 2 of 4
SCG3019
Elektronische Bauelemente
N-Channel Enhancement MOSFET
CHARACTERISTIC CURVE
http://www.SeCoSGmbH.com/
04-May-2010 Rev. A
Any changes of specification will not be informed individually.
Page 3 of 4
SCG3019
Elektronische Bauelemente
N-Channel Enhancement MOSFET
CHARACTERISTIC CURVE
http://www.SeCoSGmbH.com/
04-May-2010 Rev. A
Any changes of specification will not be informed individually.
Page 4 of 4