SMG3402 N-Ch Enhancement Mode Power MOSFET 4.6 A, 30 V, RDS(ON), 30 mΩ Ω Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTIONS & FEATURES The SMG3402 uses advanced trench technology to provide excellent on-resistance. The device is suitable for use as a load switch or in PWM applications. Lower On-resistance SC-59 A L 3 3 PACKAGE INFORMATION C B Top View Weight: 0.07800g 1 1 K 2 E 2 D Drain 3 MARKING CODE F G REF. 1 Gate 3402 2 Source 1 A B C D E F Millimeter Min. Max. 2.70 3.10 2.25 3.00 1.30 1.70 1.00 1.40 1.70 2.30 0.35 0.50 H J Millimeter Min. Max. 0.10 REF. 0.40 REF. 0.10 0.20 0.45 0.55 0.85 1.15 REF. G H J K L ABSOLUTE MAXIMUM RATINGS Parameter Symbol Drain-Source Voltage Gate-Source Voltage 3 Continuous Drain Current 3 Continuous Drain Current 1,2 Pulsed Drain Current Total Power Dissipation VDS VGS ID @TA=25℃ ID @TA=70℃ IDM PD @TA=25℃ Operating Junction and Storage Temperature Range TJ, TSTG Linear Derating Factor Ratings Unit 30 ±20 4.6 3.7 16 1.38 -55 ~ +150 0.01 V V A A A W ℃ W/℃ THERMAL DATA Parameter 3 Thermal Resistance Junction-ambient 01-December-2008 Rev. A Max Symbol RθJ-AMB Value 90 Unit ℃/W Page 1 of 4 SMG3402 N-Ch Enhancement Mode Power MOSFET 4.6 A, 30 V, RDS(ON), 30 mΩ Ω Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise specified) Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25℃) Drain-Source Leakage Current(Tj=55℃) Static Drain-Source On-Resistance 2 Total Gate Charge Gate-Source Charge Gate-Drain (“Miller”) Charge 2 Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol Min. Typ. Max. Unit BVDSS VGS(th) 5 15.8 2 3 4.8 3.9 27.7 5.5 782 135 93 2.5 ±100 1 5 30 42 - V V S nA uA uA Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss 30 1.0 - Symbol Min. Typ. Max. gfs IGSS IDSS RDS(ON) mΩ Test Conditions VGS = 0, ID = 250 uA VDS = VGS, ID = 250 µA VDS = 5 V, ID = 4.6 A VGS = ±20 V VDS = 30 V, VGS = 0 VDS = 24 V, VGS = 0 VGS = 10 V, ID = 4.6 A VGS = 4.5 V, ID = 4.0 A nC ID = 4.6 A VDS = 15 V VGS = 10 V ns VDS = 15 V ID = 1 A VGS = 10 V RG = 6 Ω RL = 15 Ω pF VGS = 0 V VDS = 15 V f = 1.0 MHz SOURCE-DRAIN DIODE Parameter 2 Forward On Voltage Notes: Unit Test Conditions VSD 1.2 V IS= 1.25 A, 1. Pulse width limited by Max. junction temperature. 2. Pulse width≦300us, duty cycle≦2%. 3. Surface mounted on 1in2 copper pad of FR4 board; 270°C/W when mounted on Min. copper pad. 01-December-2008 Rev. A VGS=0V Page 2 of 4 SMG3402 Elektronische Bauelemente N-Ch Enhancement Mode Power MOSFET 4.6 A, 30 V, RDS(ON), 30 mΩ Ω CHARACTERISTIC CURVE 01-December-2008 Rev. A Page 3 of 4 SMG3402 Elektronische Bauelemente N-Ch Enhancement Mode Power MOSFET 4.6 A, 30 V, RDS(ON), 30 mΩ Ω CHARACTERISTIC CURVES (cont’d) 01-December-2008 Rev. A Page 4 of 4