SMG3402 _SC-59_ N-ch _R,C,vA_

SMG3402
N-Ch Enhancement Mode Power MOSFET
4.6 A, 30 V, RDS(ON), 30 mΩ
Ω
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTIONS & FEATURES
The SMG3402 uses advanced trench technology to provide excellent on-resistance.
The device is suitable for use as a load switch or in PWM applications.
Lower On-resistance
SC-59
A
L
3
3
PACKAGE INFORMATION
C B
Top View
Weight: 0.07800g
1
1
K
2
E
2
D
Drain
3
MARKING CODE
F
G
REF.
1
Gate
3402
2
Source
1
A
B
C
D
E
F
Millimeter
Min.
Max.
2.70
3.10
2.25
3.00
1.30
1.70
1.00
1.40
1.70
2.30
0.35
0.50
H
J
Millimeter
Min.
Max.
0.10 REF.
0.40 REF.
0.10
0.20
0.45
0.55
0.85
1.15
REF.
G
H
J
K
L
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
3
Continuous Drain Current
3
Continuous Drain Current
1,2
Pulsed Drain Current
Total Power Dissipation
VDS
VGS
ID @TA=25℃
ID @TA=70℃
IDM
PD @TA=25℃
Operating Junction and Storage Temperature Range
TJ, TSTG
Linear Derating Factor
Ratings
Unit
30
±20
4.6
3.7
16
1.38
-55 ~ +150
0.01
V
V
A
A
A
W
℃
W/℃
THERMAL DATA
Parameter
3
Thermal Resistance Junction-ambient
01-December-2008 Rev. A
Max
Symbol
RθJ-AMB
Value
90
Unit
℃/W
Page 1 of 4
SMG3402
N-Ch Enhancement Mode Power MOSFET
4.6 A, 30 V, RDS(ON), 30 mΩ
Ω
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25℃)
Drain-Source Leakage Current(Tj=55℃)
Static Drain-Source On-Resistance
2
Total Gate Charge
Gate-Source Charge
Gate-Drain (“Miller”) Charge
2
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol
Min.
Typ.
Max.
Unit
BVDSS
VGS(th)
5
15.8
2
3
4.8
3.9
27.7
5.5
782
135
93
2.5
±100
1
5
30
42
-
V
V
S
nA
uA
uA
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
30
1.0
-
Symbol
Min.
Typ.
Max.
gfs
IGSS
IDSS
RDS(ON)
mΩ
Test Conditions
VGS = 0, ID = 250 uA
VDS = VGS, ID = 250 µA
VDS = 5 V, ID = 4.6 A
VGS = ±20 V
VDS = 30 V, VGS = 0
VDS = 24 V, VGS = 0
VGS = 10 V, ID = 4.6 A
VGS = 4.5 V, ID = 4.0 A
nC
ID = 4.6 A
VDS = 15 V
VGS = 10 V
ns
VDS = 15 V
ID = 1 A
VGS = 10 V
RG = 6 Ω
RL = 15 Ω
pF
VGS = 0 V
VDS = 15 V
f = 1.0 MHz
SOURCE-DRAIN DIODE
Parameter
2
Forward On Voltage
Notes:
Unit
Test Conditions
VSD
1.2
V
IS= 1.25 A,
1. Pulse width limited by Max. junction temperature.
2. Pulse width≦300us, duty cycle≦2%.
3. Surface mounted on 1in2 copper pad of FR4 board; 270°C/W when mounted on Min. copper pad.
01-December-2008 Rev. A
VGS=0V
Page 2 of 4
SMG3402
Elektronische Bauelemente
N-Ch Enhancement Mode Power MOSFET
4.6 A, 30 V, RDS(ON), 30 mΩ
Ω
CHARACTERISTIC CURVE
01-December-2008 Rev. A
Page 3 of 4
SMG3402
Elektronische Bauelemente
N-Ch Enhancement Mode Power MOSFET
4.6 A, 30 V, RDS(ON), 30 mΩ
Ω
CHARACTERISTIC CURVES (cont’d)
01-December-2008 Rev. A
Page 4 of 4