2N7000 200mA,60V,RDS(ON) 6Ω Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product TO-92 D Description E The 2N7000 is designed for high voltage, high speed applications such as switching regulators, converters, solenoid and relay drives. A S1 b1 L SEATING PLANE e1 e Drain REF. Gate A S1 b b1 C Source C b Millimeter Min. Max. 4.45 4.7 1.02 0.36 0.51 0.36 0.76 0.36 0.51 REF. D E L e1 e Millimeter Min. Max. 4.44 4.7 3.30 3.81 12.70 1.150 1.390 2.42 2.66 Absolute Maximum Ratings Parameter Symbol Drain Current Power Dissipation 60 V -Continuous VGS ±20 V -Non-Repetitive (tp ≦ 50us) VGSM ±40 V -Continuous ID 200 mA -Pulsed IDM 500 mA 0.35 W 2.8 mW/ oC o - TA=25 C o -Derate Above 25 C Thermal Resistance, Junction-To-Ambient Operating Junction and Storage Temperature Range Max. Lead Temperature For Soldering Purposes, 1/16" From Case For 10 Seconds http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Unit VDS Drain-Source Voltage Gate-Source Voltage Ratings PD RθJA 357 Tj, Tstg -55~+150 o TL 300 o o C/W C C Any changing of specification will not be informed individual Page 1 of 3 2N7000 200mA,60V,RDS(ON) 6Ω Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET o Electrical Characteristics( Tj=25 C Unless otherwise specified) Parameter Symbol Min. Typ. Max. Drain-Source Breakdown Voltage BVDSS 60 _ _ V VGS=0V, ID=250uA Gate Threshold Voltage VGS(th) 0.8 _ 3.0 V VDS=VGS, ID=1.0mA Gate Body Leakage Current IGSS _ _ ±10 nA VGS=±15V,VDS=0 Zero Gate Voltage Drain Current IDSS _ _ 1 uA VDS=48V,VGS=0 On-State Drain Current ID(ON) 75 _ mA VDS=10V ,VGS=4.5V _ _ RD S (O N ) Static Drain-Source On-Resistance Drain-Source On-Voltage V D S (O N ) Input Capacitance Ciss _ Unit 5 Test Condition VGS=10V, ID=500mA Ω _ _ 6 _ _ 2.5 _ _ 0.45 _ _ 60 _ _ VGS=4.5V,ID=75mA V VGS=10V, ID=500mA VGS=4.5V,ID=75mA pF VGS=0V VDS=25V _ mS VDS=10V,ID=200mA Max. Unit Test Condition nS VDD=15V,ID=500mA RG=25 Ω RL=30 Ω VGEN=10V Output Capacitance Coss Reverse Transfer Capacitance Crss _ _ 5 Forward Transconductance Gfs 100 _ Symbol Min. 25 f=1.0MHz 1 Switching Characteristics Parameter Turn-on Delay Time TON Turn-off Delay Time TOFF Typ. _ _ 10 _ _ 10 Notes: 1. Pulse width≦300us, dutycycle≦2%. http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 2 of 3 2N7000 200mA,60V,RDS(ON) 6Ω Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET Characteristics Curve http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 3 of 3