STT8205S 6A, 20V, RDS(ON) 28m N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION TSOP-6 The STT8205S provide the designer with best combination of fast switching, low on-resistance and cost-effectiveness. The TSOP-6 package is universally used for all commercial-industrial surface mount applications. A E 5 6 L 4 B FEATURES Low on-resistance Capable of 2.5V gate drive Low drive current 1 F 2 3 C H J K DG MARKING CODE REF. 8205S A B C D E F = Date Code Millimeter Min. Max. 2.70 3.10 2.60 3.00 1.40 1.80 1.10 MAX. 1.90 REF. 0.30 0.50 REF. G H J K L Millimeter Min. Max. 0 0.10 0.60 REF. 0.12 REF. 0° 10° 0.95 REF. PACKAGE INFORMATION Package MPQ LeaderSize TSOP-6 3K 7’ inch G D S S G D ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±10 V VGS=4.5V, TA = 25°C Continuous Drain Current 3 VGS=4.5V, TA = 70°C Pulsed Drain Current 1 Power Dissipation Maximum Junction to Ambient 3 ID http://www.SeCoSGmbH.com/ 09-Mar-2011 Rev. B 4.8 A IDM 20 A PD 1.14 W RθJA 110 °C / W 0.01 W / °C -55~150 °C Linear Derating Factor Operating Junction & Storage Temperature Range 6 TJ, TSTG Any changes of specification will not be informed individually. Page 1 of 4 STT8205S 6A, 20V, RDS(ON) 28m N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test condition Static Drain-Source Breakdown Voltage BVDSS 20 - - V △BVDS/△Tj - 0.03 - V / °C VGS(th) 0.5 - 1.5 V VDS=VGS, ID=250μA Forward Transfer Conductance Gfs - 20 - S VDS=10V, ID=6A Gate-Body Leakage IGSS - - ±100 nA VGS=±10V - - 1 μA VDS=16V,VGS=0 - - 25 μA VDS=16V,VGS=0 - - 28 - - 38 Qg - 23 - Qgs - 4.5 - Qgd - 7 - Td(on) - 30 - Tr - 70 - Td(off) - 40 - Tf - 65 - Input Capacitance Ciss - 1035 - Output Capacitance Coss - 320 - Reverse Transfer Capacitance Crss - 150 - Breakdown Voltage Temp. Coefficient Gate-Threshold Voltage Zero Gate Voltage Drain Current Tj =25°C Tj =75°C Drain-Source On-Resistance 2 Total Gate Charge 2 Gate-Source Charge Gate-Drain (“Miller”) Charge Turn-On Delay Time 2 Rise Time Turn-Off Delay Time Fall Time IDSS RDS(ON) mΩ VGS=0V, ID=250μA Reference to 25°C, ID=1mA VGS=4.5V, ID=6A VGS=2.5V, ID=5.2A nC ID=6A VDS=20V VGS=5V nS VDS=10V ID=1A VGS=5V RG=6Ω RD=10Ω pF VGS=0 VDS=20V f=1.0MHz V IS=1.7A, VGS=0 Source-Drain Diode Forward On Voltage 2 VDS - - 1.2 Notes: 1 Pulse width limited by Max. junction temperature. 2 Pulse width≦300us, duty cycle≦2%. 2 3 Surface mounted on 1 in copper pad of FR4 board; t≦5 sec. 180°C/W when mounted on min. copper pad. http://www.SeCoSGmbH.com/ 09-Mar-2011 Rev. B Any changes of specification will not be informed individually. Page 2 of 4 STT8205S Elektronische Bauelemente 6A, 20V, RDS(ON) 28m N-Channel Enhancement Mode Power MOSFET CHARACTERISTICS CURVE http://www.SeCoSGmbH.com/ 09-Mar-2011 Rev. B Any changes of specification will not be informed individually. Page 3 of 4 STT8205S Elektronische Bauelemente 6A, 20V, RDS(ON) 28m N-Channel Enhancement Mode Power MOSFET CHARACTERISTICS CURVE http://www.SeCoSGmbH.com/ 09-Mar-2011 Rev. B Any changes of specification will not be informed individually. Page 4 of 4