SECOS STT8205S

STT8205S
6A, 20V, RDS(ON) 28m
N-Channel Enhancement Mode Power MOSFET
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
TSOP-6
The STT8205S provide the designer with best
combination of fast switching, low on-resistance and
cost-effectiveness. The TSOP-6 package is universally
used for all commercial-industrial surface mount applications.
A
E
5
6
L
4
B
FEATURES



Low on-resistance
Capable of 2.5V gate drive
Low drive current
1
F
2
3
C
H
J
K
DG
MARKING CODE
REF.
8205S


A
B
C
D
E
F
= Date Code

Millimeter
Min.
Max.
2.70
3.10
2.60
3.00
1.40
1.80
1.10 MAX.
1.90 REF.
0.30
0.50
REF.
G
H
J
K
L
Millimeter
Min.
Max.
0
0.10
0.60 REF.
0.12 REF.
0°
10°
0.95 REF.
PACKAGE INFORMATION
Package
MPQ
LeaderSize
TSOP-6
3K
7’ inch
G
D
S
S
G
D
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Ratings
Unit
Drain-Source Voltage
VDS
20
V
Gate-Source Voltage
VGS
±10
V
VGS=4.5V, TA = 25°C
Continuous Drain Current 3
VGS=4.5V, TA = 70°C
Pulsed Drain Current 1
Power Dissipation
Maximum Junction to Ambient
3
ID
http://www.SeCoSGmbH.com/
09-Mar-2011 Rev. B
4.8
A
IDM
20
A
PD
1.14
W
RθJA
110
°C / W
0.01
W / °C
-55~150
°C
Linear Derating Factor
Operating Junction & Storage Temperature Range
6
TJ, TSTG
Any changes of specification will not be informed individually.
Page 1 of 4
STT8205S
6A, 20V, RDS(ON) 28m
N-Channel Enhancement Mode Power MOSFET
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test condition
Static
Drain-Source Breakdown Voltage
BVDSS
20
-
-
V
△BVDS/△Tj
-
0.03
-
V / °C
VGS(th)
0.5
-
1.5
V
VDS=VGS, ID=250μA
Forward Transfer Conductance
Gfs
-
20
-
S
VDS=10V, ID=6A
Gate-Body Leakage
IGSS
-
-
±100
nA
VGS=±10V
-
-
1
μA
VDS=16V,VGS=0
-
-
25
μA
VDS=16V,VGS=0
-
-
28
-
-
38
Qg
-
23
-
Qgs
-
4.5
-
Qgd
-
7
-
Td(on)
-
30
-
Tr
-
70
-
Td(off)
-
40
-
Tf
-
65
-
Input Capacitance
Ciss
-
1035
-
Output Capacitance
Coss
-
320
-
Reverse Transfer Capacitance
Crss
-
150
-
Breakdown Voltage Temp.
Coefficient
Gate-Threshold Voltage
Zero Gate Voltage Drain
Current
Tj =25°C
Tj =75°C
Drain-Source On-Resistance 2
Total Gate Charge
2
Gate-Source Charge
Gate-Drain (“Miller”) Charge
Turn-On Delay Time
2
Rise Time
Turn-Off Delay Time
Fall Time
IDSS
RDS(ON)
mΩ
VGS=0V, ID=250μA
Reference to 25°C, ID=1mA
VGS=4.5V, ID=6A
VGS=2.5V, ID=5.2A
nC
ID=6A
VDS=20V
VGS=5V
nS
VDS=10V
ID=1A
VGS=5V
RG=6Ω
RD=10Ω
pF
VGS=0
VDS=20V
f=1.0MHz
V
IS=1.7A, VGS=0
Source-Drain Diode
Forward On Voltage 2
VDS
-
-
1.2
Notes:
1 Pulse width limited by Max. junction temperature.
2 Pulse width≦300us, duty cycle≦2%.
2
3 Surface mounted on 1 in copper pad of FR4 board; t≦5 sec. 180°C/W when mounted on min. copper pad.
http://www.SeCoSGmbH.com/
09-Mar-2011 Rev. B
Any changes of specification will not be informed individually.
Page 2 of 4
STT8205S
Elektronische Bauelemente
6A, 20V, RDS(ON) 28m
N-Channel Enhancement Mode Power MOSFET
CHARACTERISTICS CURVE
http://www.SeCoSGmbH.com/
09-Mar-2011 Rev. B
Any changes of specification will not be informed individually.
Page 3 of 4
STT8205S
Elektronische Bauelemente
6A, 20V, RDS(ON) 28m
N-Channel Enhancement Mode Power MOSFET
CHARACTERISTICS CURVE
http://www.SeCoSGmbH.com/
09-Mar-2011 Rev. B
Any changes of specification will not be informed individually.
Page 4 of 4