SMG2325

SMG2325
0.45A , 250V , RDS(ON) 1.7Ω
Ω
N-Channel Enhancement Mode MOSFET
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
SC-59
The SMG2325 is the N-Channel logic enhancement
mode power filed effect transistors are produced using
high Cell density, DMOS trench technology. This high
density process is especially tailored to minimize on-state
Resistance
A
L
3
3
C B
Top View
1
1
2
K
E
2
FEATURES
D
Simple Drive Requirement
Small Package Outline
F
G
REF.
MARKING
A
B
C
D
E
F
2325
PACKAGE INFORMATION
Package
MPQ
SC-59
3K
Millimeter
Min.
Max.
2.70
3.10
2.25
3.00
1.30
1.70
1.00
1.40
1.70
2.30
0.35
0.50
H
REF.
G
H
J
K
L
J
Millimeter
Min.
Max.
0.10 REF.
0.40 REF.
0.10
0.20
0.45
0.55
0.85
1.15
TOP VIEW
Leader Size
7 inch
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Ratings
Unit
Drain-Source Voltage
VDS
250
V
Gate-Source Voltage
VGS
±20
V
TA=25°C
1
Continuous Drain Current , VGS@10V
Pulsed Drain Current
Power Dissipation
TA=70°C
2
3
TA=25°C
Operating Junction and Storage Temperature Range
0.45
ID
A
0.35
IDM
1.4
A
PD
0.8
W
Tj, Tstg
-55~150
°C
156
°C / W
Thermal Resistance Rating
Maximum Junction to Ambient
http://www.SeCoSGmbH.com/
15-Aug-2011 Rev. A
1
RθJA
Any changes of specification will not be informed individually.
Page 1 of 4
SMG2325
0.45A , 250V , RDS(ON) 1.7Ω
Ω
N-Channel Enhancement Mode MOSFET
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Teat Conditions
Static
Drain-Source Breakdown Voltage
BVDSS
250
-
-
V
VGS=0, ID=250µA
Gate-Threshold Voltage
VGS(th)
1.5
-
3.5
V
VDS=VGS, ID=250µA
Gate-Body Leakage Current
IGSS
-
-
±100
nA
VGS=±20V
Drain-Source Leakage Current
IDSS
-
-
1
µA
VDS=250V, VGS=0
-
-
1.7
Drain-Source On-Resistance
Diode Forward Voltage
1
1
RDS(ON)
VSD
VGS=10V, ID=0.45A
Ω
-
-
1.9
-
-
1.2
VGS=4.5V, ID=0.35A
V
IS=0.45A, VGS=0
Dynamic
Total Gate Charge
Qg
-
30
-
Total Gate Charge
Qg
-
17
-
Gate-Source Charge
Qgs
-
3
-
Gate-Drain (‘‘Miller’’) Charge
Qgd
-
12
-
Td(on)
-
19
-
Tr
-
4
-
Td(off)
-
48
-
Tf
-
13
-
Input Capacitance
Ciss
-
1170
-
Output Capacitance
Coss
-
36
-
Reverse Transfer Capacitance
Crss
-
10
-
Turn-on Delay Time
1
Rise Time
Turn-off Delay Time
Fall Time
Notes:
1.
2.
3.
4.
VDS=200V,VGS=10V, ID=0.45A
nC
VDS=200V,
VGS=4.5V,
ID=0.45A
nS
VDD=125V,
VGS=10V,
RG=6Ω,
RL=125Ω,
ID=0.45A
pF
VGS=0,
VDS=15V,
f=1.0MHz
Surface mounted on a 1 inch2 FR-4 board with 2OZ copper. ;270°C /W when mounted on min. copper pad.
The data tested by pulsed , pulse width ≦300us , duty cycle ≦2%
The power dissipation is limited by 150°C juncti on temperature
The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
http://www.SeCoSGmbH.com/
15-Aug-2011 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 4
SMG2325
Elektronische Bauelemente
0.45A , 250V , RDS(ON) 1.7Ω
Ω
N-Channel Enhancement Mode MOSFET
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
15-Aug-2011 Rev. A
Any changes of specification will not be informed individually.
Page 3 of 4
SMG2325
Elektronische Bauelemente
0.45A , 250V , RDS(ON) 1.7Ω
Ω
N-Channel Enhancement Mode MOSFET
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
15-Aug-2011 Rev. A
Any changes of specification will not be informed individually.
Page 4 of 4