SMS0610 -0.185A, -60V,RDS(ON) 7.5 Ω Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product SOT-23 A Features L * Super High Dense Cell Design For Low R DS(ON) S 2 3 Top View B 1 * Rugged And Reliable * SOT-23 Package D G J C K H D Drain Gate Dim Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450 0.600 L 0.890 1.020 S 2.100 2.500 V 0.450 0.600 All Dimension in mm Source G S Absolute Maximum Ratings Parameter Symbol Ratings Unit -60 V ±20 V -185 mA -1 A -250 mA PD@TA=25 C 360 mW Tj, Tstg -55~+150 Symbol Ratings Drain-Source Voltage VDS Gate-Source Voltage VGS o Continuous Drain Current ID@TJ =125 C Drain-Source Diode Forward Current 1 Pulsed Drain Current IS 2 IDM o Total Power Dissipation 1 Operating Junction and Storage Temperature Range o C Thermal Data Parameter Thermal Resistance Junction-ambient http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A 1 Rthj-a 350 Unit o C /W Any changing of specification will not be informed individual Page 1 of 5 SMS0610 -0.185A, -60V,RDS(ON) 7.5 Ω Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FET o Electrical Characteristics( Tj=25 C Unless otherwise specified) Parameter Typ. Max. Unit _ _ V VGS=0V, ID=-10uA _ -0.75 -1.4 V ID=-200 m A,VGS=0V. VGS(th) -1 _ -3 V VDS=VGS, ID=-250 uA Gate-Source Leakage Current IGSS _ _ ±10 uA VGS=±20V,VDS=0V Drain-Source Leakage Current (Tj=25 oC) IDSS _ _ -1 uA VDS=-60V,VGS=0 _ _ Drain-Source Breakdown Voltage Forward On Voltage Gate Threshold Voltage Static Drain-Source On-Resistance Symbol Min. BVDSS -60 VSD RDS(ON) _ _ 10 _ On-State Drain Current ID(ON) 600 _ Turn-on Delay Time Td(ON) _ 2.8 Tr _ Rise Time Turn-off Delay Time Fall Time Td(Off) _ Tf _ _ Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss _ Gfs _ Forward Transconductance 7.5 _ 6.5 VGS=-4.5V, ID=-0.025A mA VDS=-10V,VGS=-10V VDD=-25V _ _ 7.2 _ 11 VGS=-10V, ID=-0.5A Ω _ 10 80 Test Condition nS ID=-120mA VGS=-10V RG=6 Ω _ _ 4 _ 430 _ pF VGS=0V VDS=-25V f=1.0MHz mS VDS=-10V, ID=-0.1A Notes: 1.Surface mounted on FR4 board; t ≦10 sec. 2.Pulse width≦300us, dutycycle≦2%. 3.Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 2 of 5 SMS0610 -0.185A, -60V,RDS(ON) 7.5 Ω Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FET Characteristics Curve 1.2 -ID, Drain Current (A) -4.5V VGS = -10V 1.2 VDS = -10V -4.0V -6.0V -ID, Drain Current (A) 1.4 -3.5V 1.0 0.8 -3.0V 0.6 0.4 -2.0V 0.2 0 o TA = 125 C 0.8 0.6 0.4 0.2 5 10 15 20 25 30 1 -VDS, Drain-to-Source Voltage (V) Ciss 60 40 Coss 20 Crss 0 0 10 20 30 40 50 3 o TA = 125 C o TA = 25 C 0 8 10 -VGS, Gate-to-Source Voltage (V) Figure 5. On-Resistance Variation with Gate-to-Source Voltage. http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A 4.5 1.4 1.2 1.0 0.8 0.6 0.4 -50 RDS(ON), Normalized Drain-Source,On-Resistance (Ω) 4 6 4 -25 0 25 50 75 100 125 Tj, Junction Temperature ( C) 150 Figure 4. On-Resistance Variation with Temperature ID = -0.25A 4 3.5 o 5 2 3 ID = -0.5A VGS = -10V 1.6 60 Figure 3. Capacitance 1 2.5 1.8 -VDS, Drain-to-Source Voltage (V) 2 2 Figure 2. Thansfer Characteristics RDS(ON), Normalized Drain-Source,On-Resistance (Ω) 100 80 1.5 -VGS, Gate-to-Source Voltage (V) Figure 1. Output Characteristics C, Capacitance (pF) o 25 C 0.0 0.0 RDS(ON), On-Resistance (Ω) o -55 C 1.0 2.2 VGS = -3.0V 2.0 1.8 1.6 -3.5V 1.4 -4.0V -4.5V 1.2 -5.0V -5.5V 1.0 0.8 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -ID, Drain Current (A) Figure 6. On-Resistance Variation with Drain Current and Gate Voltage. Any changing of specification will not be informed individual Page 3 of 5 SMS0610 -0.185A, -60V,RDS(ON) 7.5 Ω 5 P-Channel Enhancement Mode Power Mos.FET 10 Single Pulse o RθJA = 350 C/W o TA = 25 C 4 o 3 2 1 -IS, Source-Drain Current (A) P(pk), Peak Transient Power (W) Elektronische Bauelemente 1 TA = 125 C 0.1 o 25 C 0.01 o -55 C 0.001 0.0001 0 0.01 0.1 1 10 100 0.2 0.4 0.6 0.8 1.0 1.2 -VSD, Body Diode Forward Voltage (V) t1, Time (sec) Figure 7. Single Pulse Maximum Power Dissipation Figure 8. Body Diode Forward Voltage Variation with Source Current 100 10 VDS = -12V ID = -0.5A -24V 80 -ID, Drain Current (A) -VGS, Gate to Source Voltage (V) VGS = 0V -48V 60 40 20 100us 1 S(O RD 0 0.4 0.8 1.2 1.6 Qg, Total Gate Charge (nC) Figure 9. Gate Charge http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A 2.0 it Lim 0.1 10s 1s 1m 10m s s 100 ms DC 0.01 VGS = 10V Single Pulse o TA = 25 C 0.001 0 N) 1 10 60 100 -VDS, Drain-to-Source Voltage (V) Figure 10. Maximum Safe Operating Area Any changing of specification will not be informed individual Page 4 of 5 SMS0610 -0.185A, -60V,RDS(ON) 7.5 Ω Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FET VDD RL VIN VGS RGEN ton D toff tr td(on) td(off) tf 90% 90% VOUT VOUT 10% 10% G 90% VIN S 50% 50% INVERTED PULSE WIDTH 10% Figure 12. Switching Waveforms Figure 11. Switching Test Circuit r(t), Normalized Effective Transient Thermal Impedance 1 0.5 Duty Cycle = 0.5 0.2 0.2 0.1 0.1 0.0.5 0.05 PDM 0.02 0.01 0.01 0.001 10 -4 t1 1. RθJA(t) = r(t)*RθJA 2. RθJA = see datasheet 3. TJM - TA = PDM*RθJA(t) 4. Duty Cycle, D = t1/t2 Single Pulse -3 10 t2 -2 10 -1 10 1 10 10 2 Square Wave Pulse Duration (sec) Figure 13. Normalized Thermal Transient Impedance Curve http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 5 of 5