SGT8810
7A, 20V,RDS(ON)20m
N-Channel Enhancement Mode Power Mos.FET
Elektronische Bauelemente
Description
The SGT8100 used advanced trench technology to provide
excellent on-resistance which is an extremely efficient and
cost-effective device. It also provides low gate charge and
operates with gate voltages as low as 1.8 V. Suitable usage
in load switch and/or PWM applications.
This device is ESD protected.
Features
* ESD Rating: 2 kV HBM
* Low on-resistance
* Capable of 1.8V gate drive
REF.
D2
D1
A
A1
G2
G1
S2
S1
Millimeter
Min.
Max.
REF.
Millimeter
Min.
Max.
E
E1
6.20
6.60
4.30
4.50
0.20
e
L
0.45
0.75
3.10
S
0°
8°
-
1.20
0.05
0.15
b
c
0.19
0.30
0.09
D
2.90
0.65 BSC
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Ratings
Unit
VDS
20
V
±8
V
o
7.0
A
o
ID@TA=70 C
5.7
A
IDM
30
A
1
W
VGS
3
Continuous Drain Current
ID@TA=25 C
3
Continuous Drain Current
Pulsed Drain Current
Symbol
1,2
o
Total Power Dissipation
PD@TA=25 C
Operating Junction and Storage Temperature Range
o
0.008
W/ C
Tj, Tstg
-55~+150
o
Symbol
Ratings
Linear Derating Factor
C
Thermal Data
Parameter
Thermal Resistance Junction-ambient
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
3
Max.
Rthj-a
125
Unit
o
C /W
Any changing of specification will not be informed individual
Page 1 of 4
SGT8810
7A, 20V,RDS(ON)20 m
N-Channel Enhancement Mode Power Mos.FET
Elektronische Bauelemente
o
Electrical Characteristics( Tj=25 C Unless otherwise specified)
Parameter
Symbol
Min.
Drain-Source Breakdown Voltage
BVDSS
20
_
_
V
VGS=0V, ID=250uA
Gate Threshold Voltage
VGS(th)
0.4
_
1.0
V
VDS=VGS,ID=250uA
Gate Resistance
Rg
_
1.5
_
Ω
f=1.0MHz
Gate-Source Leakage Current
IGSS
_
_
±10
uA
VGS= ± 8V
_
_
1
uA
VDS=20V,VGS=0
_
_
5
uA
VDS=16V,VGS=0
_
_
20
_
_
_
_
o
Drain-Source Leakage Current (Tj=25 C )
o
Drain-Source Leakage Current(Tj=55 C)
2
Static Drain-Source On-Resistance
IDSS
RD S (O N )
Total Gate Charge2
Qg
_
Gate-Source Charge
Qgs
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Typ.
Max.
24
16
_
_
0.8
_
Qgd
_
3.8
_
Td(ON)
_
6.2
Tr
_
Td(Off)
_
51.7
_
Tf
_
16
_
Ciss
_
1160
_
Coss
_
Reverse Transfer Capacitance
Crss
_
Forward Transconductance
Gfs
_
29
Symbol
Min.
Typ.
Fall Time
Input Capacitance
Output Capacitance
187
146
VGS=2.5V, ID=5.5A
VGS=1.8V, ID=5A
nC
ID=7 A
VDS=10V
VGS= 4.5V
_
_
Turn-off Delay Time
Test Condition
VGS=4.5V, ID= 7A
m
32
12.7
Rise Time
Unit
nS
VDS =10V
VGS = 5 V
RG= 3
RL = 1.35
_
pF
VGS=0V
VDS=10V
S
VDS= 5V, ID=7A
f=1.0MHz
_
_
Source-Drain Diode
Parameter
Forward On Voltage 2
Reverse Recovery Time
2
Reverse Recovery Charge
Continuous Source Current(Body Diode)
Max.
Unit
Test Condition
VSD
_
_
1.0
V
IS=1A,VGS=0V
Trr
_
17.7
_
nS
Qrr
_
6.7
_
nC
IS=7A,VGS=0V
dl/dt=100A/us
_
_
2.5
A
IS
Notes: 1. Pulse width limited by Max. junction temperature.
2.Pulse width≦300us, dutycycle≦2%.
3.Surface mounted on 1 in 2 copper pad of FR4 board.
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 2 of 4
SGT8810
Elektronische Bauelemente
7A, 20V,RDS(ON)20m
N-Channel Enhancement Mode Power Mos.FET
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 2. Transfer Characteristics
Fig 3. On-Resistance vs. Drain
Current and Gate Voltage
Fig 4. On-Resistance vs.
Junction Temperature
10
1
0.1 0.1
0.010.01
0.001
0.001
0.0001
0.0001
0.00001
Fig 5. On-Resistance
vs. Gate-Source Voltage
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Fig 6. Body Diode Characteristics
Any changing of specification will not be informed individual
Page 3 of 4
SGT8810
Elektronische Bauelemente
Fig 7. Maximum Safe Operating Area
Fig 9. Gate Charge Characteristics
125
7A, 20V,RDS(ON)20m
N-Channel Enhancement Mode Power Mos.FET
Fig 8. Single Pulse Power Rating
Junction-to-Ambient
v.s. Junction Temperature
Fig 10. Typical Capacitance Characteristics
/W
Fig 11. Normalized Maximum Transient Thermal Impedance
Curve
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 4 of 4