SSD01N60
1.6A, 600V,RDS(ON)8Ω
N-Channel Enhancement Mode Power Mos.FET
Elektronische Bauelemente
RoHS Compliant Product
Description
TO-252
The SSD01N60 provide the designer with the best combination
of fast switching.
The TO-252 is universally preferred for all commercial-industrial
surface mount applications and suited for AC/DC converters.
Features
* Dynamic dv/dt Rating
* Simple Drive Requirement
* Fast Switching
* Repetitive Avalanche Rated
D
REF.
A
B
C
D
E
F
S
G
S
Millimeter
Min.
Max.
6.40
6.80
5.20
5.50
6.80
7.20
2.20
2.80
2.30 REF.
0.70
0.90
0.60
0.90
REF.
G
H
J
K
L
M
R
Millimeter
Min.
Max.
0.50
0.70
2.20
2.40
0.45
0.55
0
0.15
0.90
1.50
5.40
5.80
0.80
1.20
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
V DS
Gate-Source Voltage
V GS
Ratings
Unit
600
V
± 20
V
1.6
A
ID@TC=100C
1
A
IDM
6
A
39
W
0.31
W/ C
EAS
13
mJ
Avalanche Current
I AR
1.6
A
Repetitive Avalanche Energy
EAR
0.5
mJ
Tj, Tstg
-55~+150
o
Continuous Drain Current,VGS@10V
ID@TC=25 C
Continuous Drain Current,VGS@10V
o
Pulsed Drain Current
1
Total Power Dissipation
o
PD@TC=25 C
Linear Derating Factor
Single Pulse Avalanche Energy
2
Operating Junction and Storage Temperature Range
o
o
C
Thermal Data
Parameter
Symbol
Thermal Resistance Junction-case
Max.
Thermal Resistance Junction-ambient
Max.
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Rthj-c
Rthj-a
Ratings
Unit
3.2
o
110
o
C /W
C /W
Any changing of specification will not be informed individual
Page 1 of 5
SSD01N60
1.6A, 600V,RDS(ON)8Ω
N-Channel Enhancement Mode Power Mos.FET
Elektronische Bauelemente
o
Electrical Characteristics( Tj=25 C Unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
Symbol
Min.
Typ.
BVDSS
600
_
_
V
BVDS/ Tj
_
0.6
_
V/ C
VGS(th)
2.0
_
4.0
V
IGSS
_
_
±100
nA
VGS=± 20V
_
_
100
uA
VDS=60 0V,VGS=0
_
_
500
uA
VDS=480 V,VGS=0
_
7.2
8.0
Ω
VGS=10V, ID=0.8A
S
VDS=50V, ID=0.8A
nC
ID=1.6A
VDS=480V
VGS= 10V
o
Drain-Source Leakage Current (Tj=25 C )
o
Drain-Source Leakage Current(Tj=150C)
Static Drain-Source On-Resistance
IDSS
RD S (O N )
Max.
Forward Transconductance
Gfs
_
0.8
_
Total Gate Charge3
Qg
_
7.7
_
Gate-Source Charge
Qgs
_
Gate-Drain ("Miller") Charge
Qgd
Turn-on Delay Time3
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
_
Td(ON)
_
Tr
_
Td(Off)
_
Tf
_
Ciss
_
_
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
_
Symbol
Min.
1.5
_
2.6
_
8
_
5
_
14
_
7
_
286
25
5
Unit
o
Test Condition
VGS=0V, ID=250uA
o
Reference to 25 C, ID=1mA
VDS=VGS, ID=250uA
VDD=300V
ID=1.6A
nS
VGS=10V
RG=10 Ω
RD=187.5 Ω
_
_
pF
VGS=0V
VDS=25V
f=1.0MHz
_
Source-Drain Diode
Parameter
Typ.
Forward On Voltage 3
VSD
_
_
Continuous Source Current(Body Diode)
IS
_
_
1
Pulsed Source Current(Body Diode)
ISM
Max.
Unit
Test Condition
o
1.5
V
IS=1.6A, VGS=0V.Tj=25C
_
1.6
A
VD=VG=0V,VS=1.5 V
_
6
A
Notes: 1. Pulse width limited by safe operating area.
2. Staring Tj=25 , VDD=50V, L=10mH, RG=25 , IAS=1.6A.
3. Pulse width 300us, duty cycle 2%.
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 2 of 5
SSD01N60
Elektronische Bauelemente
1.6A, 600V,RDS(ON)8Ω
N-Channel Enhancement Mode Power Mos.FET
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 3. Normalized BVDSS v.s. Junction
Temperature
Fig 5. Maximum Drain Current
v.s. Case Temperature
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 6. Type Power Dissipation
Any changing of specification will not be informed individual
Page 3 of 5
SSD01N60
Elektronische Bauelemente
Fig 7. Maximum Safe Operating Area
Fig 9. Gate Charge Characteristics
Fig 11. Forward Characteristics of
Reverse Diode
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
1.6A, 600V,RDS(ON)8Ω
N-Channel Enhancement Mode Power Mos.FET
Fig 8. Effective Transient Thermal Impedance
Fig 10. Typical Capacitance Characteristics
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
Any changing of specification will not be informed individual
Page 4 of 5
SSD01N60
Elektronische Bauelemente
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
1.6A, 600V,RDS(ON)8Ω
N-Channel Enhancement Mode Power Mos.FET
Fig 13. Switching Time Circuit
Fig 14. Switching Time Waveform
Fig 15. Gate Charge Circuit
Fig 16. Gate Charge Waveform
Any changing of specification will not be informed individual
Page 5 of 5