SSD15N10 15A, 100V, RDS(ON) 100mΩ N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free TO-252(D-Pack) DESCRIPTION The SSD15N10 provide the designer with the best combination of fast switching. The TO-252 package is universally preferred for all commercial-industrial surface mount applications. The device is suited for charger, industrial and consumer environment. FEATURES A B C D RDS(on) ≦ 100mΩ @ VGS = 10V Super high density cell design for extremely low RDS(on) Exceptional on-resistance and maximum DC current capability GE K PACKAGE INFORMATION M Package MPQ Leader Size TO-252 2.5K 13’ inch HF N O P J REF. A B C D E F G H Millimeter Min. Max. 6.4 6.8 5.20 5.50 2.20 2.40 0.45 0.58 6.8 7.3 2.40 3.0 5.40 6.2 0.8 1.20 Millimeter Min. Max. 2.30 REF. 0.70 0.90 0.50 1.1 0.9 1.6 0 0.15 0.43 0.58 REF. J K M N O P 2 Drain 1 Gate 3 Source ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V 15 A 13.8 A 60 A 44.6 W 2 W -55 ~ 150 °C °C / W Continuous Drain Current TC=25°C TC=70°C Pulsed Drain Current Power Dissipation 1 ID IDM TC=25°C TA=25°C Operating Junction and Storage Temperature Range PD TJ, TSTG Thermal Resistance Ratings Maximum Thermal Resistance Junction-Ambient (PCB 3 mount) RθJA 62.5 Maximum Thermal Resistance Junction-Case RθJC 2.8 °C / W Any changes of specification will not be informed individually. http://www.SeCoSGmbH.com/ 25-Apr-2011 Rev. A Page 1 of 4 SSD15N10 15A, 100V, RDS(ON) 100mΩ N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Symbol Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS 100 - - V VGS=0, ID=250µA Gate Threshold Voltage VGS(th) 1.0 - 2.5 V VDS=VGS, ID=250µA Gate-Source Leakage Current IGSS - - ±100 nA VGS= ±20V Drain-Source Leakage Current IDSS - - 1 µA VDS=80V, VGS=0 RDS(ON) - 80 100 mΩ VGS=10V, ID=8A Qg - 13 - Gate-Source Charge Qgs - 4.6 - nC ID=10A VDS=80V VGS=4.5V Gate-Drain (“Miller”) Change Qgd - 7.6 - Td(on) - 14 - Tr - 33 nS Td(off) - 39 - VDS=50V ID= 10A VGS=10V RL= 5Ω RG= 1Ω Tf - 5 - Input Capacitance Ciss - 840 - Output Capacitance Coss - 115 - pF VGS=0 VDS=25V f=1.0MHz Reverse Transfer Capacitance Crss - 80 - Gate Resistance Rg - 0.9 - Ω f=1.0MHz 1.2 V IS=8.0A, VGS=0V Parameter Static Drain-Source On-Resistance Total Gate Charge 2 Turn-on Delay Time 2 Rise Time Turn-off Delay Time Fall Time 2 Test conditions Source-Drain Diode Forward On Voltage 2 VSD - - Notes: 1. Pulse width limited by maximum junction temperature. 2. Pulse test. 3. Surface Mounted on 1 in2 copper pad of FR4 Board. http://www.SeCoSGmbH.com/ 25-Apr-2011 Rev. A Any changes of specification will not be informed individually. Page 2 of 4 SSD15N10 Elektronische Bauelemente 15A, 100V, RDS(ON) 100mΩ N-Ch Enhancement Mode Power MOSFET CHARACTERISTICS CURVE http://www.SeCoSGmbH.com/ 25-Apr-2011 Rev. A Any changes of specification will not be informed individually. Page 3 of 4 SSD15N10 Elektronische Bauelemente 15A, 100V, RDS(ON) 100mΩ N-Ch Enhancement Mode Power MOSFET CHARACTERISTICS CURVE http://www.SeCoSGmbH.com/ 25-Apr-2011 Rev. A Any changes of specification will not be informed individually. Page 4 of 4