SSD2504 N-Ch Enhancement Mode Power MOSFET 5.0A, 100V, RDS(ON) 0.22Ω Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION The SSD2504 provide the designer with the best combination of fast switching. The TO-252 package is universally preferred for all commercial-industrial surface mount applications. The device is suited for charger, industrial and consumer environment. TO-252(D-Pack) FEATURES Low On-resistance Fast Switching Speed Low-voltage drive (4V) Wide SOA (safe operating area) Easily designed drive circuits Easy to parallel A B C D GE K MARKING M Drain REF. A B C D E F G H Gate Source HF N O P J Millimeter Min. Max. 6.4 6.8 5.20 5.50 2.20 2.40 0.45 0.58 6.8 7.3 2.40 3.0 5.40 6.2 0.8 1.20 REF. J K M N O P Millimeter Min. Max. 2.30 REF. 0.70 0.90 0.50 1.1 0.9 1.6 0 0.15 0.43 0.58 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V ID @TC=25℃ 5.0 A ID @TC=100℃ 3.75 A IDM 20 A PD @TC=25℃ 20 W 0.16 W / °C -55 ~ 150 °C Continuous Drain Current Pulsed Drain Current 1 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range TJ, TSTG THERMAL DATA Maximum Thermal Resistance Junction-Ambienta RθJA 110 °C / W Maximum Thermal Resistance Junction-Case RθJC 6.25 °C / W http://www.SeCoSGmbH.com/ 11-May-2010 Rev. A Any changes of specification will not be informed individually. Page 1 of 4 SSD2504 N-Ch Enhancement Mode Power MOSFET 5.0A, 100V, RDS(ON) 0.22Ω Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) PARAMETER SYMBOL MIN. TYP. Dran-Source Breakdown Voltage BVDSS 100 - - V VGS= 0, ID= 1mA Gate-Threshold Voltage VGS(th) 1.0 - 2.5 V VDS= 10V, ID = 1mA Forward Transconductance gfs - 4 - S VDS= 10V, ID= 2.5A Gate-Source Leakage Current IGSS - - ±100 Drain-Source Leakage Current IDSS - - 10 - - 0.22 - - 0.28 Td(on) - 9.0 - Tr - 9.4 - Td(off) - 26.8 - Tf - 2.6 - Input Capacitance CISS - 975 - Output Capacitance COSS - 38 - Reverse Transfer Capacitance CRSS - 27 - Static Drain-Source On-Resistance 2 Turn-on Delay Time 2 Rise Time Turn-off Delay Time Fall Time RDS(ON) MAX. UNIT TEST CONDITIONS nA VGS= ±20V μA VDS= 100V, VGS= 0V Ω VGS= 10V, ID= 2.5A VGS= 4.0V, ID= 2.5A VDD= 30 V ID= 1 A nS VGS = 10 V RL= 30 RG= 6 VGS = 0 V pF VDS = 25 V f = 1MHz SOURCE-DRAIN DIODE Diode Forward Voltage 2 VSD - - 1.5 V IS= 5 A, VGS= 0 V Notes： 1. Pulse width limited by maximum junction temperature. 2. Pulse width ≦ 300 μs, duty cycle ≦ 2％. http://www.SeCoSGmbH.com/ 11-May-2010 Rev. A Any changes of specification will not be informed individually. Page 2 of 4 SSD2504 Elektronische Bauelemente N-Ch Enhancement Mode Power MOSFET 5.0A, 100V, RDS(ON) 0.22Ω CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 11-May-2010 Rev. A Any changes of specification will not be informed individually. Page 3 of 4 SSD2504 Elektronische Bauelemente N-Ch Enhancement Mode Power MOSFET 5.0A, 100V, RDS(ON) 0.22Ω CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 11-May-2010 Rev. A Any changes of specification will not be informed individually. Page 4 of 4