SSG9435BDY -5.3 A, -30 V, RDS(ON) 36 mΩ Ω P-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION SOP-8 The SSG9435BDY provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. B L D M FEATURES A N Simple Drive Requirement Lower On-resistance Fast Switching J H MARKING REF. A B C D E F G 9435BDYSC C = Date Code G Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 1.27 TYP. K E F REF. H J K L M N Millimeter Min. Max. 0.35 0.49 0.375 REF. 45° 1.35 1.75 0.10 0.25 0.25 REF. PACKAGE INFORMATION Package MPQ Leader Size SOP-8 3K 13 inch MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 V -5.3 A -4.7 A IDM -20 A PD 2.5 W 0.02 W / °C -55~150 °C 50 °C / W Continuous Drain Current TA = 25°C 1 TA = 70°C Pulsed Drain Current 2 Total Power Dissipation 1 ID Linear Derating Factor Operating Junction & Storage temperature TJ, TSTG Thermal Resistance Ratings 1 Thermal Resistance Junction-ambient (Max.) http://www.SeCoSGmbH.com/ 16-Jun-2011 Rev. A RθJA Any changes of specification will not be informed individually. Page 1 of 4 SSG9435BDY -5.3 A, -30 V, RDS(ON) 36 mΩ Ω P-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Static Drain-Source Breakdown Voltage BVDSS -30 - - V VGS=0, ID= -250µA Gate Threshold Voltage VGS(th) -1.0 - -2.5 V VDS=VGS, ID= -250µA gfs - 5 - S VDS= -5V, ID= -5.3A Gate-Source Leakage Current IGSS - - ±100 nA VGS= ±20V Dreain-Source Leakage Current IDSS - - -1 µA VDS= -30V, VGS=0 - - 36 Forward Transconductance 2 2 Static Drain-Source On-Resistance RDS(ON) mΩ - - 55 Qg - 9.8 - Gate-Source Charge Qgs - 2.2 - Gate-Drain(“Miller”) Change Qgd - 3.4 - Td(On) - 16.4 - Tr - 20.2 - Td(OFF) - 55 - Tf - 10 - Input Capacitance Ciss - 930 - Output Capacitance Coss - 148 - Reverse Transfer Capacitance Crss - 115 - Total Gate Change 2 Turn-On Delay Time 2 Rise Time Turn-off Delay Time Fall Time VGS= -10V, ID= -5.3A VGS= -4.5V, ID= -4.2A nC ID= -6A VDS= -20V VGS= -4.5V nS VDS= -24V ID= -1A VGS= -10V RG=3.3Ω pF VGS=0 VDS= -15V f=1.0MHz V IS= -1.7A, VGS=0V Source -Drain Diode Forward On Voltage 2 VSD - -0.84 -1.2 Note: 1. Surface mounted on 1 in2 copper pad of FR4 board;125℃/W when mounted on min. copper pad. 2. Pulse width limited by Max. junction temperature. http://www.SeCoSGmbH.com/ 16-Jun-2011 Rev. A Any changes of specification will not be informed individually. Page 2 of 4 SSG9435BDY Elektronische Bauelemente -5.3 A, -30 V, RDS(ON) 36 mΩ Ω P-Ch Enhancement Mode Power MOSFET CHARACTERISTICS CURVE http://www.SeCoSGmbH.com/ 16-Jun-2011 Rev. A Any changes of specification will not be informed individually. Page 3 of 4 SSG9435BDY Elektronische Bauelemente -5.3 A, -30 V, RDS(ON) 36 mΩ Ω P-Ch Enhancement Mode Power MOSFET CHARACTERISTICS CURVE http://www.SeCoSGmbH.com/ 16-Jun-2011 Rev. A Any changes of specification will not be informed individually. Page 4 of 4