SECOS SSG4470STM

SSG4470STM
N-Ch Enhancement Mode Power MOSFET
10 A, 40 V, RDS(ON) 10 m
Elektronische Bauelemente
FEATURES



Super high dense cell design for low RDS(on).
Rugged and reliable.
Surface Mount Package.
SOP-8
B
PRODUCT SUMMARY
VDSS(V) d
40
PRODUCT SUMMARY
RDS(on) m(Max
[email protected]= 10V
[email protected]= 4.5V
ID(A)
L
D
M
10
A
C
N
J
MARKING
H
REF.
D
D
D
D
8
7
6
5
STM4470


A
B
C
D
E
F
G
= Date Code
G
Millimeter
Min.
Max.
5.80
6.20
4.80
5.00
3.80
4.00
0°
8°
0.40
0.90
0.19
0.25
1.27 TYP.
K
F
REF.
H
J
K
L
M
N
E
Millimeter
Min.
Max.
0.35
0.49
0.375 REF.
45°
1.35
1.75
0.10
0.25
0.25 REF.

1
2
3
4
S
S
S
G
MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
PARAMETER
SYMBOL
d
RATINGS
UNIT
Drain-Source Voltage
VDS
40
V
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current @TJ= 25°C
ID
10
A
Pulsed Drain Current b
IDM
39
A
a
Drain-Source Diode Forward Current
a
Maximum Power Dissipation a
Operating Junction & Storage Temperature Range
IS
1.7
A
PD
2.5
W
TJ, TSTG
-55 ~ 150
°C
50
°C / W
THERMAL RESISTANCE RATINGS
Thermal Resistance Junction-ambient a
http://www.SeCoSGmbH.com/
29-Apr-2010 Rev. A
RθJA
Any changes of specification will not be informed individually.
Page 1 of 5
SSG4470STM
N-Ch Enhancement Mode Power MOSFET
10 A, 40 V, RDS(ON) 10 m
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
PARAMETER
SYMBOL
MIN.
TYP.
Drain-Source Breakdown Voltage d
BVDSS
40
-
Zero Gate Voltage Drain Current
IDSS
-
Gate-Body Leakage Current
IGSS
-
MAX.
UNIT
TEST CONDITIONS
OFF CHARACTERISTICS
-
V
VGS= 0V, ID= 250μA
-
1
μA
VDS= 32V, VGS= 0V
-
±100
nA
VGS= ±20V, VDS= 0V
V
VDS= VGS, ID= 250μA
ON CHARACTERISTICS b
Gate Threshold Voltage
VGS(th)
Drain-Source On-State Resistance
RDS(ON)
On-State Drain Current
Forward Transconductance
1
1.7
3
-
8
10
-
11
13
mΩ
VGS= 10V, ID= 10A
VGS= 4.5V, ID= 6A
ID(ON)
20
-
-
A
VDS= 10V, VGS= 10A
gfs
-
20
-
S
VDS= 10V, ID= 10A
pF
VDS= 20V, VGS= 0V, f= 1.0MHz
nS
VDD= 20V
ID= 1A
VGS= 10V
RGEN= 3.3Ω
DYNAMIC CHARACTERISTICS C
Input Capacitance
CISS
-
1020
-
Output Capacitance
COSS
-
240
-
Reverse Transfer Capacitance
CRSS
-
135
-
SWITCHING CHARACTERISTICS C
Turn-On Delay Time
Td(on)
-
15
-
Tr
-
22
-
Td(off)
-
48
-
Fall Time
Tf
-
12
-
Total Gate Charge
Qg
-
19.5
-
-
9.8
-
Rise Time
Turn-Off Delay Time
Gate-Source Charge
Qgs
-
2
-
Gate-Drain Charge
Qgd
-
5.5
-
VDS= 20V, ID= 10A, VGS= 10V
nC
VDS= 20V, ID= 10A, VGS= 4.5V
VDS= 20V, ID= 10A, VGS= 10V
DRAIN-SOURCE DIODE CHARACTERISTICS b
Diode Forward Voltage
VSD
-
0.73
1.2
V
VGS= 0V, IS= 1.7A
Notes
a.
Surface Mounted on FR4 Board, t ≦ 10 sec.
b.
Pulse Test:Pulse Width ≦ 300 μs, Duty Cycle ≦ 2%.
c.
Guaranteed by design, not subject to production testing.
d.
Guaranteed when external Rg= 3.3Ω and tf < tf max.
http://www.SeCoSGmbH.com/
29-Apr-2010 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 5
SSG4470STM
Elektronische Bauelemente
N-Ch Enhancement Mode Power MOSFET
10 A, 40 V, RDS(ON) 10 m
CHARACTERISTIC CURVE
http://www.SeCoSGmbH.com/
29-Apr-2010 Rev. A
Any changes of specification will not be informed individually.
Page 3 of 5
SSG4470STM
Elektronische Bauelemente
N-Ch Enhancement Mode Power MOSFET
10 A, 40 V, RDS(ON) 10 m
CHARACTERISTIC CURVE
http://www.SeCoSGmbH.com/
29-Apr-2010 Rev. A
Any changes of specification will not be informed individually.
Page 4 of 5
SSG4470STM
Elektronische Bauelemente
N-Ch Enhancement Mode Power MOSFET
10 A, 40 V, RDS(ON) 10 m
CHARACTERISTIC CURVE
http://www.SeCoSGmbH.com/
29-Apr-2010 Rev. A
Any changes of specification will not be informed individually.
Page 5 of 5