SECOS SSD50P06-15D

SSD50P06-15D
61A, -60V, RDS(ON) 17mΩ
P-Ch Enhancement Mode Power MOSFET
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen free
DESCRIPTION
These miniature surface mount MOSFETs utilize high cell
density process.Low RDS(on) assures minimal power loss
and conserves energy, making thisdevice ideal for use in
power management circuitry. Typical applications are
PWMDC-DC converters, power management in portable
and battery-powered products such as computers, printers,
battery charger, telecommunication power system, and
telephones power system.
TO-252(D-Pack)
FEATURES




A
B
C
D
Low RDS(on) provides higher efficiency and extends battery life.
Miniature TO-252 surface mount package saves board space.
High power and current handling capability.
Extended VGS range (±25) for battery pack applications.
GE
K
PACKAGE INFORMATION
M
Package
MPQ
LeaderSize
TO-252
2.5K
13’ inch
REF.
A
B
C
D
E
F
G
H
HF
N
O
P
J
Millimeter
Min.
Max.
6.4
6.8
5.20
5.50
2.20
2.40
0.45
0.58
6.8
7.3
2.40
3.0
5.40
6.2
0.8
1.20
REF.
J
K
M
N
O
P
Millimeter
Min.
Max.
2.30 REF.
0.70
0.90
0.50
1.1
0.9
1.6
0
0.15
0.43
0.58

Drain

Gate

Source
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
1
2
Continuous Source Current (Diode Conduction)
Total Power Dissipation
1
1
Operating Junction and Storage Temperature Range
Symbol
Ratings
Unit
VDS
-60
V
VGS
±20
V
ID @TA=25℃
61
A
IDM
±40
A
IS
-30
A
PD @TA=25℃
50
W
TJ, TSTG
-55 ~ 175
°C
Thermal Resistance Ratings
Maximum Thermal Resistance Junction-Ambient 1
RθJA
50
°C / W
Maximum Thermal Resistance Junction-Case
RθJC
3.0
°C / W
Notes:
1.
Surface Mounted on 1” x 1” FR4 Board.
2.
Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/
20-Dec-2010 Rev.B
Any changes of specification will not be informed individually.
Page 1 of 2
SSD50P06-15D
61A, -60V, RDS(ON) 17mΩ
P-Ch Enhancement Mode Power MOSFET
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Teat Conditions
Static
Gate-Threshold Voltage
VGS(th)
-1
-
-
Gate-Body Leakage
IGSS
-
-
±100
Zero Gate Voltage Drain Current
IDSS
-
-
-1
-
-
-10
On-State Drain Current 1
ID(on)
-20
-
-
-
-
17
-
-
23
VDS= VGS, ID = -250 μA
nA
μA
A
VDS = 0V, VGS= ±20V
VDS= -48V, VGS= 0V
VDS= -48V, VGS=0V, TJ=55°C
VDS = -5V, VGS= -10V
VGS= -10V, ID= -45A
Drain-Source On-Resistance 1
RDS(ON)
Forward Transconductance 1
gfs
-
8
-
S
VDS= -15V, ID= -45A
Diode Forward Voltage
VSD
-
-
-1.2
V
IS= -2.5 A, VGS= 0 V
mΩ
VGS= -4.5V, ID= -39A
Dynamic 2
Total Gate Charge
Qg
-
46
-
Gate-Source Charge
Qgs
-
18
-
Gate-Drain Charge
Qgd
-
41
-
Turn-on Delay Time
Td(on)
-
20
-
Tr
-
20
-
Td(off)
-
205
-
Tf
-
90
-
Rise Time
Turn-off Delay Time
Fall Time
nC
VDS = -30 V
VGS = -4.5 V
ID = -45 A
nS
VDD= -30 V
ID= -1 A
VGEN = -10 V
RL= 30 
RG= 6 
Notes:
1.
Pulse test:Pulse width ≦ 300 μs, duty cycle ≦ 2%.
2.
Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
20-Dec-2010 Rev.B
Any changes of specification will not be informed individually.
Page 2 of 2