2N3553 MECHANICAL DATA Dimensions in mm (inches) NPN SILICON HIGH FREQUENCY TRANSISTOR 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. APPLICATIONS 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200) typ. 2.54 (0.100) 2 1 3 0.74 (0.029) 1.14 (0.045) The 2N3553 is designed for amplifier and oscillator applications in military and industrial equipment. Suitable for use as output, driver or pre-driver stages in VHF equipment. 0.71 (0.028) 0.86 (0.034) FEATURES 45° TO-39 (TO - 205AD) Pin 1 – Emitter Pin 2 – Base Pin 3 – Collector • Fast Switching • Low Leakage Current ABSOLUTE MAXIMUM RATINGS(TA = 25°c unless otherwise stated) VCEO Collector – Emitter Voltage 40V VCBO Collector – Base Voltage 65V VEBO Emitter – Base Voltage 4.0V IC Continuous Collector Current 1A PD Total Device Disipation @ TCase = 25°C 7W Derate above 25°C Tj , Tstg Operating and Storage Junction Temperature Range 40mW/°C –65 to +200°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 5619 Issue 1 2N3553 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Parameter Test Conditions VCEO(sus) Collector Emitter Sustaining Voltage IC = 200mA IB = 0 40 V(BR)EBO Emitter Base Breakdown Voltage IE = 0.1mA IC = 0 4.0 ICEO Collector Cut Off Current VCE = 30V IB = 0 0.1 Collector Cut Off Current VCE = 30V TC = 200°C 5.0 VBE(off) = 1.5V VCE = 65V IEBO Emitter Cut Off Current VBE = 4V IC= 0 hFE DC Current Gain IC = 250mA VCE = 1.0V VCE(sat) Collector Emitter Saturation Voltage IC = 250mA IB = 50mA fT Current Gain - Bandwidth Product IC = 100mA VCE = 28V Cobo Output Capacitance Pin Power Input ICEX Gpe N IE = 0 Gain f =175MHz Pout = 2.5W Unit V mA 1.0 8.0 VCE = 28V VCE = 28V f =175MHz V MHz 500 VCB = 30V VCE = 28V — 10 f =175MHz Pout = 2.5W Max. 0.1 f = 100kHz Pout = 2.5W Typ. 1.0 f = 100MHz Common Emitter Amplifier Power Collector Efficiency Min. 10 pF 0.25 W 10 dB 50 % Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 5619 Issue 1