2N5794 MECHANICAL DATA Dimensions in mm (inches) 8.51 (0.335) 9.40 (0.370) 6.10 (0.240) 6.60 (0.260) 7.75 (0.305) 8.51 (0.335) DUAL NPN PLANAR TRANSISTORS IN TO77 PACKAGE 12.7 (0.500) Min. 1.02 (0.040) Max. 0.41 (0.016) 0.53 (0.021) 5.08 (0.200) 2.54 (0.100) 4 2.54 (0.100) 3 5 0.74 (0.029) 1.14 (0.045) 6 2 1 45˚ 0.71 (0.028) 0.86 (0.034) TO–77 PACKAGE (MO - 002AF) Underside View PIN 1 – Collector 1 PIN 2 – Base 1 PIN 3 – Emitter 1 PIN 4 – Emitter 2 PIN 5 – Base 2 PIN 6 – Collector 2 ABSOLUTE MAXIMUM RATINGS VCBO VCEO VEBO IC PD Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Continuous Collector Current Total Device Dissipation PD Total Device Dissipation TSTG Storage Temperature Range (Tamb = 25°C unless otherwise stated) TAMB = 25°C Derate above 25°C TC = 25°C Derate above 25°C EACH SIDE TOTAL DEVICE 75V 40V 6V 600mA 500mW 600mW 2.9mW / °C 3.4Wm/ °C 1.2W 2.0W 6.9mW / °C 11.43mW / °C –65 to 200°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 6068 Issue 1 2N5794 ELECTRICAL CHARACTERISTICS (Tamb = 25°C unless otherwise stated) Parameter Test Conditions 1 Min. Typ. Max. Unit INDIVIDUAL TRANSISTOR CHARACTERISTICS IC = 10μA V(BR)CBO Collector – Base Breakdown Voltage IE = 0 75 V(BR)CEO* Collector – Emitter Breakdown Voltage IC = 10mA IB = 0 40 V(BR)EBO Emitter –Base Breakdown Voltage IE = 10μA IC = 0 6 ICBO Collector Cut-off Current VCB = 50V IE = 0 10 nA IEBO Emitter Cut-off Current VEB = 4.0V IC = 0 10 nA IC1-C2 Collector1-2 Leakage Current VC1-C2 = ±50V ±1.0 nA hFE* DC Current Gain VBE(sat)* Base – Emitter Saturation Voltage VCE(sat)* Collector – Emitter saturation Voltage V VCE = 10V IC = 100μA 35 VCE = 10V IC = 1mA 50 VCE = 10V IC = 10mA 75 VCE = 1.0V IC = 150mA 50 VCE = 10V IC = 150mA 100 VCE = 10V IC = 300mA 40 IC =150mA IB = 15mA 0.6 IC =300mA IB = 30mA 1.8 IC =150mA IB = 15mA 0.3 IC =300mA IB = 30mA 0.9 — 300 1.2 V V SMALL SIGNAL CHARACTERISTICS IC = 20mA VCE = 20V MHz fT Transition Frequency Ccb Collector - base Capacitance VCB = 10V IE =0 f =100kHz 8.0 pF Ceb Emitter- base Capacitance VEB = 0.5V IC =0 f =100kHz 25 pF f = 100MHz 250 SWITCHING CHARACTERISTICS td Delay Time VCC = 30V VBE(off) = 0.5V 15 ns tr Rise Time IC = 150mA IB1 =15mA 30 ns ts Storage Time VCC = 30V IC = 150mA 250 ns tf Fall Time 60 ns IB1 = IB2 = 15mA * Pulse Width ≤ 300μs , Duty Cycle < 2% Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 6068 Issue 1