2N6660CSM4 MECHANICAL DATA N–CHANNEL ENHANCEMENT MODE MOSFET VDSS 60V ID 1.0A RDS(on) 3.0Ω Dimensions in mm (inches) 1.40 ± 0.15 (0.055 ± 0.006) 5.59 ± 0.13 (0.22 ± 0.005) 3 4 1.02 ± 0.20 (0.04 ± 0.008) 2 1 1.27 ± 0.05 (0.05 ± 0.002) 0.23 rad. (0.009) 0.64 ± 0.08 (0.025 ± 0.003) 3.81 ± 0.13 (0.15 ± 0.005) 0.25 ± 0.03 (0.01 ± 0.001) 0.23 min. (0.009) FEATURES 2.03 ± 0.20 (0.08 ± 0.008) • • • • LCC3 PACKAGE (MO-041BA) (Underside View) PAD 1 – DRAIN PAD 3 – SOURCE PAD 2 – N/C PAD 4 – GATE ABSOLUTE MAXIMUM RATINGS T Faster switching Low Ciss Integral Source-Drain Diode High Input Impedance and High Gain DESCRIPTION This enhancement-mode (normally-off) vertical DMOS FET is ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Hi-Reliability Military and Space screening options available CASE = 25°C unless otherwise stated VDS Drain - Source Voltage 60V ID Drain Current - Continuous (TC = 25°C) 1.0A IDM Drain Current - Pulsed (Note 1) VGS Gate - Source Voltage ±20V Ptot(1) Total Power Dissipation at T mounting base ≤ 25°C 3.0W 3A De-rate Linearly above 25°C Ptot(2) Total Power Dissipation at Tambient ≤ 25°C Tj,Tstg Operating and Storage Junction Temperature Range 0.020W/°C 0.5W -55 to +175°C THERMAL DATA Rthj-mb NOTES: Thermal Resistance Junction – Mounting base Max 50 °C/W 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Pulse Test: Pulse Width ≤ 300µS, Duty Cycle , δ 2% Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk DOC 7777, ISSUE 2 2N6660CSM4 STATIC ELECTRICAL RATINGS (T V(BR)DSS VGS(th) =25°C unless otherwise stated) Parameter Test Conditions Drain – Source Breakdown Voltage VGS = 0V ID = 10µA 60 - - VDS = VGS ID = 1.0mA 0.8 - 2 TC = 125°C 0.3 - - TC = -55°C - - 2.5 VDS = 0V - - ±100 TC = 125°C - - ±500 VGS = 0V - - 1.0 TC = 125°C - - 100 VDS = 10V VGS = 10V 1.5 - - VGS = 5V ID = 0.3A - - 5 VGS = 10V ID = 1.0A - - 3 TC = 125°C - - 5.6 Gate – Source threshold Voltage IGSS Gate – Source Leakage Current IDSS Zero Gate Voltage Drain Current ID(on) On – State Drain Current (Note 2) RDS(on) case Drain – Source On Resistance (Note 2) VGS = ±20V VDS = 48V Min. Typ. Max. Unit V nA µA A Ω gFS Forward Transconductance (Note 2) VDS = 25V ID = 0.5A 170 - - ms VSD Diode Forward Voltage (Note 2) VGS = 0V Is = 1.0A 0.7 - 1.6 V trr Body Diode Reverse Recovery VGS = 0V Is = 1.0A - 350 - ns - - 50 - - 40 - - 10 ID = 1.0A - - 10 (Note 3) - - 10 DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Td(on) Turn-On Delay Td(off) Turn-Off Delay Time VDS = 25V f = 1.0MHz VDD = 25V RGS = 50Ω VGS = 0V pF ns Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk DOC 7777, ISSUE 2