ZVN2106B MECHANICAL DATA N–CHANNEL ENHANCEMENT MODE MOSFET VDSS 60V ID 1.2A RDS(on) 2.0Ω Dimensions in mm (inches) 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. FEATURES 5.08 (0.200) typ. 1 • • • • 2.54 (0.100) 2 3 0.74 (0.029) 1.14 (0.045) Faster switching Low Ciss Integral Source-Drain Diode High Input Impedance and High Gain 0.71 (0.028) 0.86 (0.034) DESCRIPTION This enhancement-mode (normally-off) vertical DMOS FET is ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. High Reliability Screening options are available. 45° TO-39 PACKAGE (TO-205AD) (Underside View) PIN 1 – SOURCE PIN 3 – DRAIN CASE – DRAIN PIN 2 – GATE ABSOLUTE MAXIMUM RATINGS T CASE = 25°C unless otherwise stated VDS Drain - Source Voltage 60V ID Drain Current - Continuous (TC = 25°C) 1.2A - Continuous (TA = 25°C) 0.45A IDM Drain Current - Pulsed (Note 1) VGS Gate - Source Voltage Ptot(1) Total Power Dissipation at Tmb ≤ 25°C 8A ±20V 5W De-rate Linearly above 25°C Ptot(2) Total Power Dissipation at Tamb ≤ 25°C Tj,Tstg Operating and Storage Junction Temperature Range 0.040W/°C 700mW -55 to +150°C THERMAL DATA Rthj-c Thermal Resistance Junction – Case Max 20 °C/W Rthj-amb Thermal Resistance Junction - Ambient Max 179 °C/W NOTES: 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Pulse Test: Pulse Width ≤ 380µS, Duty Cycle , δ 2% Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk DOC 7927, ISSUE 1 ZVN2106B STATIC ELECTRICAL RATINGS (T case =25°C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain – Source Breakdown Voltage VGS = 0V ID = 10µA 60 - - VGS(th) Gate – Source threshold Voltage VDS = VGS ID = 1.0mA 0.8 - 2.4 IGSS Gate – Source Leakage Current VGS = ±20V VDS = 0V - - ±20 IDSS Zero Gate Voltage Drain Current VDS = 60V VGS = 0V - - 0.5 VDS = 48V TC = 125°C - - 100 ID(on) On – State Drain Current (note 2) VDS = 18V VGS = 10V 2 - - A RDS(on) Drain – Source On Resistance (note 2) VGS = 10V ID = 1.0A - - 2 Ω gFS Forward Transconductance (note 2) VDS = 18V ID = 1.0A 300 - - ms VSD Diode Forward Voltage (note 2) VGS = 0V Is = 0.45A - 0.8 - V - - 75 - - 45 V nA µA DYNAMIC CHARACTERISTICS Ciss Input Capacitance VDS = 18V f = 1.0MHz VGS = 0V Coss Output Capacitance Crss Reverse Transfer Capacitance - - 20 td(on) Turn-On Delay - - 7 tr Rise Time ID = 1A - - 8 (note 2) - - 12 - - 15 - 50 - td(off) Turn-Off Delay Time tf Fall Time trr Reverse Recovery Time VDD = 18V VGS = 0V, IF = 0.45A, IR = 0.1A pF ns ns Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk DOC 7927, ISSUE 1