HUR1620CT High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode A C A Dimensions TO-220AB A C A C(TAB) A=Anode, C=Cathode, TAB=Cathode VRSM V 200 HUR1620CT Symbol VRRM V 200 Test Conditions IFRMS IFAVM TC=150oC; rectangular, d=0.5 IFSM TVJ=45oC; tp=10ms (50Hz), sine EAS IAR o TVJ=25 C; non-repetitive; IAS=2A; L=180uH VA=1.5.VR typ.; f=10kHz; repetitive A B C D E F G H J K M N Q R Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110 Ptot TC=25oC Md mounting torque typical Milimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 BSC 4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79 Maximum Ratings Unit 35 2x8 A 80 A 0.5 mJ 0.2 A -55...+175 175 -55...+150 TVJ TVJM Tstg Weight Dim. o C 60 W 0.4...0.6 Nm 2 g HUR1620CT High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Symbol Test Conditions Characteristic Values typ. max. Unit IR TVJ=25oC; VR=VRRM TVJ=150oC; VR=VRRM 50 0.2 uA mA VF IF=8A; TVJ=150oC TVJ=25oC 0.94 1.30 V RthJC RthCH trr IRM 2.5 0.5 IF=1A; -di/dt=50A/us; VR=30V; TVJ=25oC 25 o VR=100V; IF=10A; -diF/dt=100A/us; TVJ=100 C K/W ns 4.1 A FEATURES APPLICATIONS ADVANTAGES * International standard package * Planar passivated chips * Very short recovery time * Extremely low switching losses * Low IRM-values * Soft recovery behaviour * Antiparallel diode for high frequency switching devices * Antisaturation diode * Snubber diode * Free wheeling diode in converters and motor control circuits * Rectifiers in switch mode power supplies (SMPS) * Inductive heating * Uninterruptible power supplies (UPS) * Ultrasonic cleaners and welders * Avalanche voltage rated for reliable operation * Soft reverse recovery for low EMI/RFI * Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch