SIRECTIFIER HUR1620CT

HUR1620CT
High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
A
C
A
Dimensions TO-220AB
A
C
A
C(TAB)
A=Anode, C=Cathode, TAB=Cathode
VRSM
V
200
HUR1620CT
Symbol
VRRM
V
200
Test Conditions
IFRMS
IFAVM
TC=150oC; rectangular, d=0.5
IFSM
TVJ=45oC; tp=10ms (50Hz), sine
EAS
IAR
o
TVJ=25 C; non-repetitive; IAS=2A; L=180uH
VA=1.5.VR typ.; f=10kHz; repetitive
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
Inches
Min.
Max.
0.500 0.550
0.580 0.630
0.390 0.420
0.139 0.161
0.230 0.270
0.100 0.125
0.045 0.065
0.110 0.230
0.025 0.040
0.100
BSC
0.170 0.190
0.045 0.055
0.014 0.022
0.090 0.110
Ptot
TC=25oC
Md
mounting torque
typical
Milimeter
Min.
Max.
12.70 13.97
14.73 16.00
9.91 10.66
3.54
4.08
5.85
6.85
2.54
3.18
1.15
1.65
2.79
5.84
0.64
1.01
2.54
BSC
4.32
4.82
1.14
1.39
0.35
0.56
2.29
2.79
Maximum Ratings
Unit
35
2x8
A
80
A
0.5
mJ
0.2
A
-55...+175
175
-55...+150
TVJ
TVJM
Tstg
Weight
Dim.
o
C
60
W
0.4...0.6
Nm
2
g
HUR1620CT
High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
Symbol
Test Conditions
Characteristic Values
typ.
max.
Unit
IR
TVJ=25oC; VR=VRRM
TVJ=150oC; VR=VRRM
50
0.2
uA
mA
VF
IF=8A; TVJ=150oC
TVJ=25oC
0.94
1.30
V
RthJC
RthCH
trr
IRM
2.5
0.5
IF=1A; -di/dt=50A/us; VR=30V; TVJ=25oC
25
o
VR=100V; IF=10A; -diF/dt=100A/us; TVJ=100 C
K/W
ns
4.1
A
FEATURES
APPLICATIONS
ADVANTAGES
* International standard package
* Planar passivated chips
* Very short recovery time
* Extremely low switching losses
* Low IRM-values
* Soft recovery behaviour
* Antiparallel diode for high frequency
switching devices
* Antisaturation diode
* Snubber diode
* Free wheeling diode in converters
and motor control circuits
* Rectifiers in switch mode power
supplies (SMPS)
* Inductive heating
* Uninterruptible power supplies (UPS)
* Ultrasonic cleaners and welders
* Avalanche voltage rated for reliable
operation
* Soft reverse recovery for low
EMI/RFI
* Low IRM reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch