MMBT3904LT1 Transistors (NPN) FEATURES Power dissipation, PCM: 0.2W (Tamb=25℃) Collector current, ICM: 0.2A Collector-base voltage, V(BR)CBO: 60V Operating and storage junction temperature range: TJ, Tstg: -55℃ to +150℃ SOT-23 plastic-encapsulate package Device Marking: AM1 ELECTRICAL CHARACTERISTICS Parameter Symbol Test Conditions Min Max 60 Unit Collector-base breakdown voltage V(BR)CBO Ic= 100 µA, IE=0 V Collector-emitter breakdown voltage V(BR)CEO VIc= 1 mA, IB=0 Emitter-base breakdown voltage V(BR)EBO IE= 100µA, IC=0 Collector cut-off current ICBO VCB= 60V, IE=0 0.1 µA Collector cut-off current ICEO VCE= 40V, IB=0 0.1 µA Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 µA DC current gain HFE(1) VCE=10V, IC= 1mA 100 HFE(2) VCE= 1V, IC= 50mA Collector-emitter saturation voltage VCE(sat) IC=50mA, IB= 5mA 0.3 V Base-emitter saturation voltage VBE(sat) IC= 50mA, IB= 5mA 0.95 V Transition frequency fT VCE= 20V, IC= 10mA 40 6 60 V V 300 250 MHz f=100MHz Delay Time td VCC=3.0Vdc,VBE=0.5Vdc 35 nS Rise Time tr IC=10mAdc,IB1=1.0mAdc 35 nS Storage Time ts VCC=3.0Vdc, IC=10mAdc 200 nS Fall Time tf IB1=IB2=1.0mAdc 50 nS Note: Unless otherwise specified, these specifications apply over the operating ambient temperature of 25℃. 12/16/2006 Rev. 1.00 www.SiliconStandard.com 1 MMBT3904LT1 Disclaimer Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no guarantee or warranty, expressed or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of Silicon Standard Corporation or any third parties. 12/16/2006 Rev. 1.00 www.SiliconStandard.com 2