SSC MMBT2222A

MMBT2222A
TRANSISTOR (NPN)
PRODUCT SUMMARY
SOT-23 Plastic-Encapsulate Transistors
SOT-23
FEATURES
Epitaxial planar die construction
Complementary PNP Type available (MMBT2907A)
1. BASE
2.EMITTER
3.COLLECTOR
MARKING: 1P
MECHANCIAL DATA
NA
Pb-free; RoHS-compliant
MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
VEBO
IC
PC
TJ
Tstg
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
12/04/2007 Rev.1.00
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Value
Units
75
V
40
6
600
350
150
-55to+150
V
V
mA
mW
℃
℃
1
MMBT2222A
ELECTRICAL CHARACTERISTICS
(Tamb=25°C unless otherwise specified)
Parameter
Symbol
Test
conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
IC= 10μA, IE=0
75
V
Collector-emitter breakdown voltage
V(BR)CEO
IC= 10mA, IB=0
40
V
Emitter-base breakdown voltage
V(BR)EBO
IE=10μA, IC=0
6
V
Collector cut-off current
ICBO
VCB=60V, IE=0
10
nA
Collector cut-off current
ICEX
VCE=60V, VBE(off)=3V
10
nA
Emitter cut-off current
IEBO
VEB= 3V,IC=0
0.1
μA
hFE(1)
VCE=10V, IC=150mA
100
hFE(2)
VCE=10V, IC= 0.1mA
40
VCE=10V, IC= 500mA
42
DC current gain
hFE(3)
Collector-emitter saturation voltage
VCE(sat)
Base-emitter saturation voltage
VBE(sat)
Transition frequency
fT
Delay time
td
Rise time
tr
Storage time
tS
Fall time
tf
IC=500 mA, IB= 50mA
IC=150 mA, IB=15mA
IC=500 mA, IB= 50mA
IC=150 mA, IB=15mA
VCE=20V, IC= 20mA
f=100MHz
300
1
0.3
2.0
1.2
0.6
300
V
V
MHz
VCC=30V, VBE(off)=-0.5V
IC=150mA , IB1= 15mA
10
nS
25
nS
VCC=30V, IC=150mA
IB1=-IB2=15mA
225
nS
60
nS
CLASSIFICATION OF hFE(1)
Rank
Range
12/04/2007 Rev.1.00
L
H
100-200
200-300
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2
MMBT2222A
TYPICAL CHARACTERISTICS
12/04/2007 Rev.1.00
www.SiliconStandard.com
3
MMBT2222A
12/04/2007 Rev.1.00
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4
MMBT2222A
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no
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responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
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without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
12/04/2007 Rev.1.00
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5